ZXMS6004DN8
Document number: DS38040 Rev. 2 - 2
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ZXMS6004DN8
ADVANCE INFO R MA T I O N
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET® MOSFET
Product Summary
Continuos Drain-Source Voltage: 60V
On-State Resistance: 500mΩ
Nominal Load Current (VIN = 5V): 1.3A
Clamping Energy: 120mJ
Description
The ZXMS6004DN8 is a dual self-protected low side MOSFET with
logic level input. It integrates over-temperature, overcurrent,
overvoltage (active clamp) and ESD protected logic level functionality.
The ZXMS6004DN8 is ideal as a general purpose switch driven from
3.3V or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
Applications
Lamp Driver
Motor Driver
Relay Driver
Solenoid Driver
Features and Benefits
Low Input Current
Logic Level Input (3.3V and 5V)
Short Circuit Protection with Auto Restart
Overvoltage Protection (Active Clamp)
Thermal Shutdown with Auto Restart
Overcurrent Protection
Input Protection (ESD)
High Continuous Current Rating
Totally Lead-Free; RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 79.1 mg (Approximate)
Ordering Information (Note 4)
Product
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
ZXMS6004DN8-13
6004DN8
13
12
2,500 units
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Top View
SO-8
Top View
Pin-Out
6004DN8 = Product name
Device Symbol
Top View
D2
S2
IN2
D1
S1
IN1
YY: Year
WW: Week: 01~52;
52 represents 52 and 53 week
S1
S2
IN2
IN1
D1
D1
D2
D2
Logo
Part No.
Pin 1.
6004DN8
YY WW
IntelliFET is a registered trademark of Diodes Incorporated.
ZXMS6004DN8
Document number: DS38040 Rev. 2 - 2
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ZXMS6004DN8
ADVANC E INF O R M A TIO N
Functional Block Diagram
Application Information
Two completely isolated independent channels
Especially suited for loads with a high in-rush current such as lamps and motors
All types of resistive, inductive and capacitive loads in switching applications
μC compatible power switch for 12V and 24V DC applications
Replaces electromechanical relays and discrete circuits
Linear Mode Capability — the current-limiting protection circuitry is designed to deactivate at low VDS to minimize on-state power dissipation
The maximum DC operating current is therefore determined by the thermal capability of the package or board combination, rather than by the
protection circuitry. This does not compromise the product’s ability to self-protect at low VDS
Absolute Maximum Ratings (@TA = +25°C, unless otherwise stated.)
Characteristic
Symbol
Value
Units
Continuous Drain-Source Voltage
VDS
60
V
Drain-Source Voltage For Short Circuit Protection
VDS(SC)
36
V
Continuous Input Voltage
VIN
-0.5 to +6
V
Continuous Input Current @ -0.2V ≤ VIN ≤ 6V
Continuous Input Current @VIN < -0.2V or VIN > 6V
IIN
No limit
│IIN │≤2
mA
Pulsed Drain Current @VIN = 3.3V
IDM
2
A
Pulsed Drain Current @VIN = 5V
IDM
2.5
A
Continuous Source Current (Body Diode) (Note 5)
IS
1
A
Pulsed Source Current (Body Diode)
ISM
5
A
Unclamped Single Pulse Inductive Energy,
TJ = +25°C, ID = 0.5A, VDD = 24V
EAS
120
mJ
Electrostatic Discharge (Human Body Model)
VHBM
4,000
V
Charged Device Model
VCDM
1,000
V
ZXMS6004DN8
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ADVANC E INF O R MA TI O N
Thermal Characteristics
Characteristic
Symbol
Value
Units
Power Dissipation at Tamb = +25°C (Note 5)
Linear Derating Factor
PD
1.21
9.7
W
mW/°C
Power Dissipation at Tamb = +25°C (Note 6)
Linear Derating Factor
PD
1.56
12.5
W
mW/°C
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
103
°C/W
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
81
°C/W
Thermal Resistance, Junction to Case (Note 7)
RθJC
13.5
°C/W
Operating Temperature Range
TJ
-40 to +150
°C
Storage Temperature Range
TSTG
-55 to +150
°C
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
7. Thermal resistance between junction and the mounting surfaces of drain and source pins.
Recommended Operating Conditions
The ZXMS6004DN8 is optimized for use with µC operating from 3.3V and 5V supplies.
Characteristic
Symbol
Min
Max
Unit
Input Voltage Range
VIN
0
5.5
V
Ambient Temperature Range
TA
-40
+125
°C
High Level Input Voltage for MOSFET to be On
VIH
3
5.5
V
Low Level Input Voltage for MOSFET to be Off
VIL
0
0.7
V
Peripheral Supply Voltage (voltage to which load is referred)
VP
0
36
V
ZXMS6004DN8
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ZXMS6004DN8
ADVANC E INF O R MA TI O N
100ms
0.00
0.50
1.00
1.50
2.00
2.50
0 25 50 75 100 125 150
IF, DC Forward Current(A)
TA, Ambient Temperature (℃)
Figure. DC Forward Current Derating
IF(A)-MRP(1)
IF(A)-1 inch(2)
0.01
0.1
1
10
0.1 1 10 100
Id, Drain Current (A)
Vds, Drain-Source Voltage (V)
SOA, Safe Operation Area
Id(A) @
DC
Id(A)
@Pw=10s
Id(A)
@Pw=1s
Id(A)
@Pw=100
ms
Id(A)
@Pw=10
ms
Id(A)
@Pw=1ms
Id(A)
@Pw=100
us
Tj,(Max)=150℃
Ta=25℃,
Vgs=5V
Single Pulse
Rds(on)
Limited
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
r(t), Transient Thermal Resistance
t1, Pulse Duration Time (sec)
Figure: Transient Thermal Resistance
r(t) @ D=0.9
r(t) @ D=0.7
r(t) @ D=0.5
r(t) @ D=0.3
r(t) @ D=0.1
r(t) @ D=0.05
r(t) @ D=0.02
r(t) @ D=0.01
r(t) @ D=0.005
r(t) @ D=Single Pulse
Rthja(t)=r(t) * Rthja
Rthja=108C/W
Duty Cycle, D=t1 / t2
0
100
200
300
400
500
600
700
800
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
P(pk), Peak Transient Power (W)
t1, Pulse Duration Time (sec)
Figure 1: Pulse Power Dissipation
Single Pulse
Rthja=108C/W
Rthja(t)=Rthja * r(t)
Tj-Ta=P * Rthja (t)
Thermal Characteristics (Continued)
Limit of s/c protection
1S
10S
DC
10ms
1ms
ZXMS6004DN8
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ADVANC E INF O R MA TI O N
Notes:
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Static Characteristics
Drain-Source Clamp Voltage
VDS(AZ)
60
65
70
V
ID = 10mA
Off-State Drain Current
IDSS
—
—
1
µA
VDS = 12V, VIN = 0V
—
—
2
VDS = 36V, VIN = 0V
Input Threshold Voltage
VIN(th)
0.7
1
1.5
V
VDS = VGS, ID = 1mA
Input Current
IIN
—
60
100
µA
VIN = +3V
—
120
200
VIN = +5V
Input Current while Over-Temperature Active
—
—
—
300
µA
VIN = +5V
Static Drain-Source On-State Resistance
RDS(ON)
—
400
600
mΩ
VIN = +3V, ID = 1A
—
350
500
VIN = +5V, ID = 1A
Continuous Drain Current (Notes 5)
ID
0.9
—
—
A
VIN = 3V; TA = +25°C
1.0
—
—
VIN = 5V; TA = +25°C
Continuous Drain Current (Note 5)
1.1
—
—
VIN = 3V; TA = +25°C
1.2
—
—
VIN = 5V; TA = +25°C
Current Limit (Note 8)
ID(LIM)
0.7
1.7
—
A
VIN = +3V
1
2.2
—
VIN = +5V
Dynamic Characteristics
Turn On Delay Time
td(on)
—
5
—
µs
VDD = 12V, ID = 0.5A, VGS = 5V
Rise Time
tr
—
10
—
µs
Turn Off Delay Time
td(off)
—
45
—
µs
Fall Time
ff
—
15
—
µs
Over-Temperature Protection
Thermal Overload Trip Temperature (Note 9)
TJT
+150
+175
—
°C
—
Thermal Hysteresis (Note 9)
ff
—
+10
—
°C
—
8. The drain current is restricted only when the device is in saturation (see graph ”Typical Output Characteristic”). This allows the device to be used in the
on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside
saturation makes current limit unnecessary.
9. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal
operating range, so this part is not designed to withstand over-temperature for extended periods.
ZXMS6004DN8
Document number: DS38040 Rev. 2 - 2
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ZXMS6004DN8
ADVANC E INF O R MA TI O N
-50 0 50 100 150 200 250 300
0
2
4
6
8
10
12
-50 0 50 100 150 200 250 300
0
2
4
6
8
10
12
0 5 10 15
0
2
4
6
8
Switching Speed
VIN
Drain-Source Voltage (V)
Time (s)
VDS
ID=1A VDS
VIN
Switching Speed
Drain-Source Voltage (V)
Time (s)
ID=1A
Typical Short Circuit Protection
VIN = 5V
VDS = 15V
RD = 0
ID Drain Current (A)
Time (ms)
Typical Characteristics (Continued)
ZXMS6004DN8
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ADVANC E INF O R MA TI O N
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SO-8
Dim
Min
Max
A
—
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
—
0.35
L
0.62
0.82
0
8
All Dimensions in mm
Dimensions
Value (in mm)
X
0.60
Y
1.55
C1
5.4
C2
1.27
Gauge Plane
Seating Plane
Detail ‘A’
Detail ‘A’
E
E1
h
L
D
eb
A2
A1
A
45°7°~9°
A3
0.254
X
C1
C2
Y
SO-8
SO-8
ZXMS6004DN8
Document number: DS38040 Rev. 2 - 2
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ADVANC E INF O R MA TI O N
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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website, harmless against all damages.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
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failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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