ALD114835SC - Advanced Linear Devices

EPAD

ADVANCED

LINEAR

DEVICES, INC.

*N/C pins are internally connected.

Connect to V- to reduce noise

PC, SC PACKAGES

PA, SA PACKAGES

PIN CONFIGURATION

VGS(th)= -3.5V

ALD114835/ALD114935

QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD®

MATCHED PAIR MOSFET ARRAYS

ORDERING INFORMATION

GENERAL DESCRIPTION

ALD114835/ALD114935 are monolithic quad/dual N-Channel MOSFETs

matched at the factory using ALD’s proven EPAD CMOS technology. These

devices are intended for low voltage, small signal applications. They are excel-

lent functional replacements for normally-closed relay applications, as they are

normally on (conducting) without any power applied, but could be turned off or

modulated when system power supply is turned on. These MOSFETs have the

unique characteristics of, when the gate is grounded, operating in the resis-

tance mode for low drain voltage levels and in the current source mode for

higher voltage levels and providing a constant drain current.

ALD114835/ALD114935 MOSFETs are designed for exceptional device elec-

trical characteristics matching. As these devices are on the same monolithic

chip, they also exhibit excellent temperature tracking characteristics. They are

versatile as design components for a broad range of analog applications such

as basic building blocks for current sources, differential amplifier input stages,

transmission gates, and multiplexer applications. Besides matched pair electri-

cal characteristics, each individual MOSFET also exhibits well controlled pa-

rameters, enabling the user to depend on tight design limits. Even units from

different batches and different date of manufacture have correspondingly well

matched characteristics.

These depletion mode devices are built for minimum offset voltage and differ-

ential thermal response, and they are designed for switching and amplifying

applications in single 5V to +/-5V systems where low input bias current, low

input capacitance and fast switching speed are desired. These devices exhibit

well controlled turn-off and sub-threshold charactersitics and therefore can be

used in designs that depend on sub-threshold characteristics.

The ALD1 14835/ALD1 14935 are suitable for use in precision applications which

require very high current gain, beta, such as current mirrors and current sources.

A sample calculation of the DC current gain at a drain current of 3mA and gate

input leakage current of 30pA = 100,000,000. It is recommended that the user,

for most applications, connect V+ pin to the most positive voltage potential (or

left open unused) and V- and N/C pins to the most negative voltage potential

in the system. All other pins must have voltages within these voltage limits.

FEATURES

• Depletion mode (normally ON)

• Precision Gate Threshold Voltages: -3.50V +/- 0.05V

• Nominal RDS(ON) @VGS=0.0V of 540Ω

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

• Low input capacitance

• VGS(th) match (VOS) — 20mV

• High input impedance — 1012Ω typical

• Positive, zero, and negative VGS(th) temperature coefficient

• DC current gain >108

• Low input and output leakage currents

APPLICATIONS

• Functional replacement of Form B (NC) relay

• Zero power fail safe circuits

• Backup battery circuits

• Power failure detector

• Fail safe signal detector

• Source followers and buffers

• Precision current mirrors

• Precision current sources

• Capacitives probes

• Sensor interfaces

• Charge detectors

• Charge integrators

• Differential amplifier input stage

• High side switches

• Peak detectors

• Sample and Hold

• Alarm systems

• Current multipliers

• Analog switches

• Analog multiplexers

• Voltage comparators

• Level shifters

N/C*

314

413

512

N/C*

GN1

DN1

N/C*

DN4

N/C*

GN4

GN3

DN3

DN2

GN2

S34

S12

ALD114835

M 4 M 3

M 1 M 2

V-

N/C*

ALD114935

M 1 M 2

V-

N/C*

V-

* Contact factory for industrial temp. range or user-specified threshold voltage values

www.aldinc.com

Operating Temperature Range*

0°C to +70°C0°C to +70°C

16-Pin 16-Pin 8-Pin 8-Pin

Plastic Dip SOIC Plastic Dip SOIC

Package Package Package Package

ALD114835PC ALD114835SC ALD114935PA ALD114935SA

ALD114835/ALD114935 Advanced Linear Devices 2

Notes: 1 Consists of junction leakage currents

ABSOLUTE MAXIMUM RATINGS

Drain-Source voltage, VDS 10.6V

Gate-Source voltage, VGS 10.6V

Power dissipation 500 mW

Operating temperature range PA, SA, PC, SC package 0°C to +70°C

Storage temperature range -65°C to +150°C

Lead temperature, 10 seconds +260°C

OPERATING ELECTRICAL CHARACTERISTICS

V+ = +5V (or open) V- = -5V TA = 25°C unless otherwise specified

CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.

Parameter Symbol Min Typ Max Unit Test Conditions

Gate Threshold V oltage VGS(th) -3.55 -3.50 -3.45 V IDS =1µA

VDS = 0.1V

Offset Voltage VOS 720mV

VGS(th)1 - VGS(th)2

Offset Voltage Tempco TCVOS 5µV/ °CV

DS1 = VDS2

GateThreshold Voltage Tempco TCVGS(th) -1.7 mV/ °CI

D = 1µA, VDS = 0.1V

0.0 ID = 20µA, VDS = 0.1V

+1.6 ID = 40µA, VDS = 0.1V

On Drain Current IDS (ON) 12.0 mA VGS = +6.0V, VDS =+5V

3.0 VGS = +0.5V, VDS =+5V

Forward T ransconductance GFS 1.4 mmho VGS = +0.5V

VDS = +5.5V

Transconductance Mismatch ∆GFS 1.8 %

Output Conductance GOS 68 µmho VGS =+0.5V

VDS = +5.5V

Drain Source On Resistance RDS (ON) 540 ΩVDS = +0.1V

VGS = +0.0V

Drain Source On Resistance ∆RDS (ON) 5%

Tolerance

Drain Source On Resistance ∆RDS (ON) 0.5 %

Mismatch

Drain Source Breakdown BVDSX 10 V IDS = 1.0µA

Voltage VGS = -4.5V

Drain Source Leakage Current1IDS (OFF) 10 100 pA VGS = -4.5V, VDS =+5V

4nAT

A = 125°C

Gate Leakage Current1IGSS 330pAV

DS = 0V VGS = +10V

1nAT

A =125°C

Input Capacitance CISS 2.5 pF

Transfer Reverse Capacitance CRSS 0.1 pF

Turn-on Delay Time ton 10 ns V+ = 5V RL= 5KΩ

Turn-off Delay Time toff 10 ns V+ = 5V RL= 5KΩ

Crosstalk 60 dB f = 100KHz

ALD114835 / ALD114935