Numerical Index 2N3856-2N3961 ale MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS sie = a || REPLACE: | PAGE Py | El] | Vee | Vee | = lire @ Ie Vegan @ | Bl] y |= TYPE z 5 MENT _ | NUMBER USE = cB E 5 2 CEISAT) Cy n_ 18 2/5 =\a @25C | B| C | (alts) | (volts) |S | (min) (max) 5 (volts) 5 3 s/e 2N3856 | S| N] MPS6513 | 5-109] RFC} 0.2W/ AJ 150 18 18,0] 100] 200] 2.0M 140M | T 2N3856A4 | S| N | MPS6513 5-109] RFC 0.2W] A] 150 30 30] 07 100} 200 2,0M 140M | T 2N3857 | S| P AFA] 0.6W | A {| 200 45 45|0] 50] 200 1.0M O.1 10M 45/E |] 4,.0M}T 2N3858 S| N{ MPS6512 5-109| RFC O.2W| A | 125 30 3010 60 | 120 2.0M 90M | T 2N3858A | S| N | MPS6566 | 5-148] RFA} 200M] A | 100 60 60; 0] 45 1.0M 90M | T 2N3859 | S| N | MPS6513 5~109] RFC} O.2W] AJ 125 30 30} 01100} 200} 2.0M 90M | T 2N3859A | S| N| MPS6566 5~-148| AFA 200M | Aj 100 60 60] 0 75 1.0M 90M | T 2N3860 S] N| MPS6514 5-109] RFC 0O.2W] A] 125 30 30 | 0} 150] 300 2.0M 90M | T 2N3861 |S] N LPA} 2.0W|A]175| 530] 530)V] 30] 200 25M 1.5 25M 20] 50M | T 2N3862 | S| N HSS | 0,36W | A | 200 50 20; 0] 50] 150 1OM | 0.25 10M 600M | T 2N3863 | S| N |} 2N3715 7-125] PMS LL7W | C | 200 70 50/0] 30] 90} 3.0A 1.0] 3.0A 0.5M|T 2N3864 [| S{N | 2N3716 7-125] PMS 117W | c | 200 110 90} 0] 30] 90] 3.0A 1.0] 3.04 O.5MjT 2N3865 S|N PMS L17W | Cc } 200 160 150} 0 30 90 3.0A 1.0 3.0A O.5M/T 2N3866 | S| N 9-91 | HPA] 5.,0W] Cc } 200 55 30} Oj] 10} 200 50M 1.0] O.1A 250M | T 2N3867 | S| P HSS 1.0W | A } 200 40 40]0 7] 40] 200 1.5A | 0.75 1,54 60M | T 2N3868 |S] P HSS 1.0W | A | 200 60 60] 0} 30] 150 1.5A | 0.75 1.54 60M | T BN3869 SIN HPA] 2.5W]C } 175 40 20]0] 20] 150 30M 0.7] 0.454 0.4G]T N3870 thru Thyristors, see Table on Page 1-154 2N3873 2N3876 | SIN LPA| 150W {C1175 140 5070} 25 | 150 LOA 1.0 10A 86] E 50M | T 2N3877 S| N | 2N4410 5-45 | AFC) 0.2W] A | 150 70 70)}0] 20] 250] 2.0M 2N3877A | S| N { 2N4410 5-45 | AFC] 0.2W | A} 150 85 8510] 204250] 2.0M 2N3878 | S{[N HPA 35W | c {| 200 120 5010}; 40] 200] 0.54 2.04, 4.0A 40 |E 40M | T 2N3879 SyN PMS 35W | Cc | 200 120 7510 12 ] 100 4.0A 1.2 4.0A 40M | T 2N3880 A RFA 0.2W | A | 200 30 15} 0 30 | 200 3.0M 50 1E 1.26 |T 2N3881 {S| N RFA | 0.6W|A | 200 60 35 | 0 1.5] 0.154 S50 | E 70M | T 2N3882 Field Effect Transistor, see Table on Page 1-166 2N3883 | GP { | 8-282] Hss| 0.3w | A | 100 25 15] 0] 30 0.2A 0.5) 0.28 LOOM | T 2N3884 thru Thyristors, see Table on Page 1-154 2N3899 2N3900 S| N | 2N5088 5*59 AFC 0.2W | A] 125 18 18 | 0 | 250 | 500 2.0M 170 |E 2N3900A | S | N | 2N5088 5-59 | AFC| 0.2W)A | 125 18 18 }0 | 250} 500] 2.0M 170 | E 2N3901 | S| N | 2N5088 5-59 | AFC| O,.2W}A {125 18 18} 0 |350] 700} 2.0M 350] E 2N3902 S| N PMS LoOW | c | 150 400 400 | 0 20 | 100 LOA 2.5 2.5A 40K [ E 2N3903 | S|N 5-11 | HSS | 0.31W] A | 135 60 40]0] 507150 10M 0.2 1OM 50}E |} 250M/T 2N3904 S| N 5-11 HSS | 0.31W] A | 135 60 40 | 0 | 100 | 300 10M 0.2 10M 100, E 300M | T 2N3905 |S] P 5-16 | HSS |] 0.31W] A | 135 40 40}0] 50/150 10M | 0.25 10M 50{E } 200M/T 2N3906 s]|P 5-16 HSS | 0.31W] A | 135 40 40 | O | 100 | 300 LOM 0.25 10M LOO JE 250M | T 2N3907 | S| N | 2N2915 11-27] DFA} 0.3W] A | 200 60 45 |0] 60] 300 10* | 0.35 1.0M 60M | T 2N3908 S| Nj 2N2916 11-27 | DFA 0.3W | A | 200 60 60 | 0 | 100 | 500 10* 0.35 1.0M 60M | T 2N3909 | Field Effect Transistor, see Table on Page 1-166 2N3910 | S| P CHP {| 0.5W | A | 200 60 50}0 4 40] 160 1.0M 0.3 10M 4.0M | T 2N3911 Ss) P CHP 0.5W )A ) 200 60 40) 0 60 | 240 L.0M 0.3 LOM 8.0M)T 2N3912 |S] P CHP | O.5W | A | 200 60 30]; 0] 90 L.OM 0.3 10M 10M | T 2N3913 Ss] P CHP 0.4W | A | 200 60 501, 0 40 | 160 1.0M 0.3 10M 4.0M/T 2N3914 | S|P CHP | 0,4W 1} A | 200 60 40} 0 | 60 | 240 1.0M 0.3 10M 8.0M|T 2N3915 S| P CHP O.4W] A 00 60 30] 0 90 , OM 0.3 10M 10M | T 2N3916 STN LPA 5.0W | | 150 150 5 0 40 | 200] 0.154 5,0] 0,154 30 50M | T 2N3917 S| N LPA 20W | C | 150 80 4010 30 | 120 1.0A 1.2 0A 15] E 30M {T 2N3918 S| N A 20W |] Cc} 150 80 40 | 0 | LOO | 300 L.OA 1.2 1,0A 30 | E 50M | T 2N3919 S| N PMS 15w jC} 150 120 60/0 40] 120 2,0A 1.2 10A 80M | T 2N3920 S|] N PMS 15W}] Cc} 150 120 60} 0} 100) 300 2.04 1.2 10A 80M | T aaa Field Effect Transistors, see Table on Page 1-166 2N3923 S| N VID 0.8wW | A | 200 150 150] 0 30} 120 25M 1.0 25M 20) E 40M | T 2N3924 | SIN 9-96 | HPA| 7.0W | c | 200 36 18 | 0 250M | T 2N3925 |S|N 9-96 | HPA 10W | C | 200 36 18 | 0 250M 1T 2N3926 S|N 9-96 HPA | 11.6W | C | 200 36 18 | 0 250M | T 2N3927 | S|N 9-96 | HPA | 23.2wW] Cc | 200 36 1840 200M | T 2N3928 }S] N PHS) 7.5W|C]175 80 40)0) 20}300]) 1.54 5.0} 1.54 200M | T 2N3929 S|N PHS 30W }C 1175 80 40] 0 20 | 300 1L.5A 5.0 1L.5A 200M | T 2N3930 |S] P AFA] 0.4W {A | 200 180 180 | O | 80 | 300 10M | 0.25 LOM | 100 40M | T 2N3931 |S|P AFA] 0.7W {| A | 200 180 180 | 0 | 80 | 300 10M | 0.25 10M | 100 40M | T 2N3932 S| N RFA 0.2W | A | 200 30 20)0 40 | 150 2.0M 50 750M | T 2N3933 Sy N RFA 0.2wW | A | 200 40 30] 0 60 | 200 2.0M 60 750M | T 3N3334 Field Effect Transistors, see Table on Page 1-166 2N3936 thru Thyristors, see Table on Page 1-154 2N3940 2N3941L_ [| S|N DFA | 0.75W | G | 200 60 45 | 0 | 400 10* 300 | E | 200M/T 2N3942 S|N DFA j 0.75W | Cc j 200 60 45 | 0 {400 10% 300 | E | 200M] T 2N3943 S|N DFA O.5W | c | 200 60 45 | 0 {400 10* 300] E 200M; T 2N3944 S| N DFA O.5W fc 7 200 60 45 | 0 | 400 1o* 300] 5 200M { T 2N3945 S| N MNS] 5.0W}C {200 70 50 ]0O] 40 | 250 | 0.154 0.5] 0.15A 60M | T 2N3946 S\N 8-286 | HSA 360M | A | 200 60 40 |0 504,150 10M 0.3 50M 50 | E 250M | T 2N3947 S|] N 8-286] HSA 360M | A | 200 60 40 | 0 | 100 | 300 10M 0.3 50M 100] E 300M | T 2N3948 S| N 9-102 | HPA 1.0W | A | 200 36 207,0 15 50M 700M | T 2N3950 |S|N 9-106] HPA 70W | C | 200 65 35 | 0 150M | T 2N3953 S| N RFA 0.2W {A {200 15 12 10 30 | 360 2.0M 40] E 1,36, T 2N3954 thru Field Effect Transistors, see Table on Page 1-166 2N3958 2N3959 |S|N 8-292| HNS | 400M | A | 200 20 12} 01} 40 | 200 10M 0.3 30M 13; E 1.3G | T 2N3960 |) S)N 8-292} HNS |} 400M] A } 200 20 12} 0} 40 } 260 LOM 8.3 30M 16} E] 1.66)T 2N396L |S|N 9-74 | HPA 10W } c | 200 65 40,0 400M | T 1-144GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS (SILICON) Switching and General Purpose Transistors Current versus Voltage OPTIMUM COLLECTOR CURRENT BVcto Oto 10 mA 10 mA to 100 mA 100 mA to 500 mA 500 mA to 1.04 AOAC 3OA Min Volts NPN PNP NPN PNP NPN PNP NPN PNP NPN PNP 15 2N916 2N916 2N696 2N1991 2N2330 2N1983 2N697 | 2N2331 2N1984 2N718 2N1420 29 2N2195 30 2N2218 | 2N3133 2N2218 | 2N2800 2N2219 | 2N3134 2N2219 | 2N2801 2N2221 | 2N3135 2N2221 | 2N2837 2N2222 | 2N3136 2N2222 | 2N2838 2N3299 | 2N3133 2N3300 | 2N3134 2N3301 | 2N3135 39 2N3302 | 2N3136 49 2N758 2N3250 2N2218A| 2N3250 2N2194 | 2N2904 2N2192 | 2N3244 2N3506 2N795 2N3251 2N2219A! 2N3251 2N2218A} 2N2905 2N2193 | 2N3245 2N3507 2N760 MM4048 2N22214! 2N2219A) 2N2906 2N915 2N2222A 2N2221A] 2N2907 2N929 2N2224 2N2222A!| 2N3485 2N930 2N3946 2N3486 2N3946 2N3947 2N4890 59 2N3947 60 2N758A | 2N3798 2N910 2N3250A 2N656 2N2904A 2ZN759A | 2N3799 2N911 2N3251A 2N699 2N2905A 2N760A | 2N3250A 2N1990 2N2906A 2N929A | 2N3251A 2N2907A 2N9304 2N3485A MM2483 2N3486A 79 MM2484 80 2N739 2N3494 2N720A | 2N3494 2N720A 2N3019 Y 2N740 2N3496 2N1893 | 2N3496 2N3019 2N3020 99 2N2405 2N3020 100 2N4924 | 2N3495 2N3498 | 2N3495 2N3498 | 2N3634 \ 2N3497 2N3499 | 2N3497 2N3499 | 2N3635 2N4928 2N4924 | 2N9634 2N4924 2N3635 149 2N4928 150 2N3114 | 2N4929 2N3500 | 2N3635 2N3500 | 2N3636 2N4925 | 2N4930 2N3501 | 2N3637 2N3501 | 2N3637 2N4926 2N4925 | 2N4929 2N4925 249 2N4926 | 2N4930 250 2N3742 | 2N3743 2N3742 | 2N3743 uP 2N4927 | 2N4931 2N4927 | 2N4931 D?'NWi(*=ww~rirosdc &{ WiehwWWMWWwwYo qh~w~wy* ~7* We > >, ,wWW, BCE)?0DiWwCOCC WN NWSwitching and General Purpose Transistors 2N3724, 2N3725 2N4013, 2N4014 (continued) ELECTRICAL CHARACTERISTICS (1, = 25C unless otherwise noted) Characteristic Symbol | Min | Max | Unit ON CHARACTERISTICS (continued) Collector-Emitter Saturation Voltage* Vor(sat)* Vdc a, = 10 mAdc, Ig = 1.0 mAdc) - 0, 25 I. = mAdc, I, = mAdc N 2N - . Cc 100 B 10 mA 2N3724, 2N4013 0.20 2N3725, 2N4014 - 0.26 Mp = 300 mAdc, I3e 30 mAdc) 2N3724, 2N4013 - 0.32 2N3725, 2N4014 - 0.40 (lg = 500 mAdc, I, = 50 mAdc) 2N3724, 2N4013 - 0. 42 2N3725, 2N4014 - 0. 52 de = 800 mAdc, I, = 80 mAdc) 2N3724, 2N4013 - 0. 65 2N3725, 2N4014 - 0. 80 (I, = 1.0 Ade, I,, = 100 mAde) 2N3724, 2N4013 - 0.75 2N3725, 2N4014 - 0.95 Base-Emitter Saturation Voltage* Vv * Vdc (I, = 10 mAde, Tg = 1.0 mAde) BE(sat) - 0.76 (a mAdc, I, = mAdc - . c 100 B 10 mA 0. 86 Co = 300 mAdc, I, = 30 mAdc) - 11 Gy = 500 mAdc, Ip 50 mAdc) 0.9 1.2 dg = 800 mAdc, Int 80 mAdc) - 1.5 My = 1,0 Ade, 1, = 100 mAdc) - 1.7 SMALL-SIGNAL CHARACTERISTICS Current-GainBandwidth Product fp MHz a, = 50 mAdc, Vor = 10 Vdc, f = 100 MHz) 300 - Output Capacitance Cob pF (Vop = 10 Vdc, Ip = 0, f = 140 kHz) 2N3724, 2N4013 - 12 2N3725, 2N4014 - 10 Input Capacitance Ciy pF (Var = 0.5 Vdc, Ine 0, f = 140 kHz) - 55 SWITCHING CHARACTERISTICS Turn-On Time ton - 35 ns (Vaan = 30 Vde, Vip = 3,8 Vdc 5 cc > "BE (aff) ; _ Delay Time Ig = 500 mAde, I; = 50 mAdc) a *0 ns Rise Time (See Figure 1) t. - 30 ns Turn-Off Time tote - 60 ns (Vog = 30 Vde, I, = 500 mAdc, Storage Time ~ . t - 50 ns 31 =lp2 = 50 mAdc) s Fall Time (See Figure 1) 2N3724, 2N4013 te - 25 ns 2N3725, 2N4014 - 30 * Pulse Test: Pulse Width = 300 us, Duty Cycle = 1.0%. FIGURE 1 SWITCHING TIMES TEST CIRCUIT +30Vv < > 15 -3.8V > 1.0 PF ( (o TO SAMPLING OSCILLOSCOPE 1.0k e 4 7 | Zin & 100 k22 TL t< 1.0 ns Vin = 19-7 1.0 BF 100 PULSE GENERATOR . t,. tp < 1.0ns 62 PW. ~ 1.0 ps Zin = 80.Q + == D.C. < 2.0% - ~ 8-258 Switching and General Purpose Transistors 2N3946 (siLicon) Vero = 40 V Ic = 200 mA 2n3947 f; = 250-300 MHz (min) Q NPN silicon annular transistors, designed for gen- eral purpose switching and amplifier applications. The 2N3946 and 2N3947 are complementary with types CASE 22 2N3250 and 2N3251, respectively. Collector connected to case MAXIMUM RATINGS (Ta = 25C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage Vep 60 Vdc Collector-Emitter Voltage VcEO 40 Vde Emitter-Base Voltage Ves 6 Vdc Collector Current I, 200 mAdc Total Device Dissipation @ Tg = 25C Py 1.2 Watts Derating Factor Above 25C 6.9 mw/C Total Device Dissipation @ T, = 25C Pp 0.36 Watt Derating Factor Above 25C 2.06 mw/C Thermal Resistance Junction to Air OJA 0.49 Cc/mw Junction to Case 93C 0.15 C/mWw Junction Operating Temperature Ty 200 % Storage Temperature Range Tstg -65 to +200 C ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) | Characteristic 1 Symbol |Min|Max|_ Unit ] OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVcpo Vde (Ig = 10 pAde, 1g = 0) 60) Collector-Emitter Breakdown Voltage* BVcEro* Vde (Ig = 10 mAdc) 40]; Emitter-Base Breakdown Voltage BVEBO Vde (Im = 10 pAde, I, = 0) 6]; Collector-Cutotf Current IcEx pAdc (VCE = 40 Vdc, Vop = 3 Vdc) | .010 (VoR = 40 Vde, VopR = 3 Vde, Ta = 150C) j 15 Base Cutoff Current Is. u Adc (Vor = 40 Vdc, Vopg = 3 Vdc) | 025 *Pulse Test: PW 5300 us , Duty Cycle <2% Vop= Base-Emitter Reverse Bias 8-286 Switching and General Purpose Transistors 2N3946, 2N3947 (continued) ELECTRICAL CHARACTERISTICS (continued) (Ta = 25C unless otherwise noted) 1 Characteristic | Symbol | Min|Max{ Unit | ON CHARACTERISTICS DC Current Gain* hpre* (Ig = 0.1 mAdc, Vor = 1 Vdc) 2N3946 30 2N3947 60 (Ic = 1.0 mAdc, Veg = 1 Vdc) 2N3946 45 _ 2N3947 90 _ (Ic = 10 mAdc, Vcr= 1 Vde) 2N3946 50 | 150 2N3947 100 | 300 (Ig = 50 mAdc, Veg = 1 Vde) 2N3946 20 2N3947 40 Collector Saturation Voltage* VocR(sat) Vdc (Ic = 10 mAdc, Ip = 1 mAde) CE(sat) | _ | o2 (Ic = 50 mAdc, Ip = 5 mAdc) _ 0.3 Base- Emitter Saturation Voltage* VBE(sat)* vde (ig = 10 mAdc, Ip = 1 mAdc) 0.6 0.9 (Ic = 50 mAdc, Ip = 5 mAdc) 1.0 TRANSIENT CHARACTERISTICS Output Capacitance Cop pF (Vop = 10 Vde, Ig = 0, f = 100 kHz) _ 4 Input Capacitance Cin pF (Vp = 1 Vde, I, = 0,f = 100 kHz) _ 8 Current-Gain - Bandwidth Product fo MHz (Ig = 10 mAde, Veg = 20 Vde, f = 100 MHz) 2N3946 250 2N3947 300 _- Delay Time Voc = 3 Vac, Vop = 0.5 Vdc ty _ 35 ns Rise Time I, = 10 mAde, Ip; = 1 mA t. _ 35 ns Storage Time = = 2N3946 t | 300 8 Voo=3 Vi Ig=10mA, 9n3947 s ee ek Fall Time Ip) = -lbe = 1 mAdc ty "5 ns SMALL SIGNAL CHARACTERISTICS Small-Signal Current Gain hee _ (ig = 1.0 mA, Vog = 10 V, f = 1 KHz) 2N3946 50 | 250 2N3947 100 | 700 Voltage Feedback Ratio Dre x10-4 We = 1.0 mA, V, = 10 V,f = 1 kHz) 2N3946 _ 10 c CE 2N3947 | 20 Input Impedance hie kohms (Ig = 1.0 mA, Vog = 10 V,f = 1 kHz) 2N3946 0.5 6 2N3947 2 12 Output Admittance Noe umhos (Ig = 1.0 mA, Vor = 10 V, f= 1 kHz) 2N3946 1 30 2N3947 5 50 Collector-Base Time Constant ThCc ps (Ic = 10 mA, Vog = 20 V,f = 31.8 MHz) | 200 Wide Band Noise Figure NF dB (Ic = 100 pA, Vog = 5 V, Ry =1kQ,f= 10Hz to 15.7 kHz) _ 5 *Pulse Test: PW 300 us, Duty Cycle a 2% Vop= Base-Emitter Reverse Bias 8-287- Switching and General Purpose Transistors 2N3946, 2N3947 (continued) TYPICAL SWITCHING CHARACTERISTICS (Ts = 25C unless otherwise noted) DELAY AND RISE TIME RISE TIME Io/le = 10 Yoo = 15 Volts lo/ly =10 =25C Zs ~oTy = 150C = 2 = = 2N3947 2 2N3947 3 10 20 30 50 70 10 2 30 50 10 20 30 50 7.0 10 2 3 50 lo, COLLECTOR CURRENT (mA) Ic, COLLECTOR CURRENT (mA) STORAGE AND FALL TIMES 2N3946 2N3947 wee lefly = 10++150C 1000 Heil = 10-"150C le/le = 20=150C 700 le/ly = 20--150C 500 300 200 TIME (ns) TIME (ns) 100 70 50 30 20 10 2.0 3.0 50 70 10 20 30 50 1.0 20 3.0 50 7.0 10 20 30 50 Ic, COLLECTOR CURRENT (mA) te, COLLECTOR CURRENT (mA) TURN-ON TIME EQUIVALENT TEST CIRCUIT TURN-OFF TIME EQUIVALENT TEST CIRCUIT DUTY CYCLE = 2% +3 DUTY CYCLE = 2% 43y >| 300s aa hf 10<t,<500 ps +1064 +1099 \ C<4 pF a2" 7 ' -9.1 |~ -4 le <10 ns *TOTAL SHUNT CAPACITANCE OF TEST JG AND CONNECTORS 8-288~ Switching and General Purpose Transistors 2N3946, 2N3947 (continued) AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS Vee= 5 V, Ta = 25C SOURCE RESISTANCE = 300 Q 3 ic = 0.5 mA 3 o = 2 3 2 ws e g = = SOURCE RESISTANCE 1K lo = 100 c= 100 nA SOURCE RESISTANCE = 2K le = 50 pA 100 200 400 1K 2K 4K -10K.-20K_~40K_~100K 100 200 400 1K 2K 4K 10K 20K = 40K 100K f, FREQUENCY (Hz! R,, SOURCE RESISTANCE (OHMS) h PARAMETERS Vee = 10V, Ta = 25C. f= 1 Ke CURRENT GAIN OUTPUT ADMITTANCE 2N3947 2 : 5 2N3947 2 2N3946 ot 02 05 Lo 20 588 al 02 05 19 29 59 10 Ie. COLLECTOR CURRENT (mAde] le, COLLECTOR CURRENT (Adc) INPUT IMPEDANCE VOLTAGE FEEDBACK RATIO = . 2N3947 ge 2N3947 im = : 2 9 0.2 05 10 2.0 5.0 10 0.2 0.2 05 10 2.0 5.0 10 ic, COLLECTOR CURRENT (mAdc} Ic, COLLECTOR CURRENT (mAdc) 8-289 Switching and General Purpose Transistors 2N3946, 2N3947 (continued) CURRENT GAIN CHARACTERISTICS Ty = 175C Ty = 100C Ty = 25C = 15C fre, CURRENT GAIN Ty = 55C O1 0.2 05 10 2.0 .0 10 20 50 Ic, COLLECTOR CURRENT (mA) Ty = 175C Ty = 100C Ty = 25C z 3 Ty= -15C _ z s Ty = 55C 0.1 0.2 0.5 10 2.0 5.0 10 20 50 Ic, COLLECTOR CURRENT (mA) CAPACITANCE CHARGE DATA 2N3946 ~ = 25C 150C 2N3947 - 25C -+-= 150C : g : : 2 5 3 9 = BOTHTYPES Voc = 40 Veo = 15V O1 02 05 10 2.0 5.0 10 20 50 1.0 20 30 50 7.0 10 20 30 50 REVERSE BIAS VOLTAGE (VOLTS) be, COLLECTOR CURRENT {ma} 8-290 Switching and General Purpose Transistors 2N3946, 2N3947 (continued) COLLECTOR SATURATION REGION 2N3946 lo =3 mA Ic = 10 mA ic = 30 mA + Ic = 50.mA S < T, =25C Vee, COLLECTOR-EMITTER VOLTAGE (volts) 0.01 0.02 0.05 0.1 0.2 05 10 2.0 5.0 10 1g, BASE CURRENT (mA) 2N3947 ic = 30 mA Ic = 50 mA _ . Ty= 25C Vog, COLLECTOR-EMITTER VOLTAGE (voits) 0.01 0.02 0.05 01 0.2 0.5 10 2.0 5.0 10 tg, BASE CURRENT (mA) ON VOLTAGES TEMPERATURE COEFFICIENTS +05 Buc. for Voe(uat} 25C to + 23946 00 55C to 25C = 2N3947 . Ss = 05 Voe(sar) @ Ie/le = 10 = $5C to 25C 2 SS 2 2 -10 2 Vee @ Vee=1V a % oS 5 = -15 = & = ve for Vactse 25C 10 175C # -20 & Veetsat) @ Ic/la = 10 25 30 Ol 02 05 1.0 20 5.0 10 20 50 0 10 20 30 PC 50 Ie, COLLECTOR CURRENT (mA) Ie, COLLECTOR CURRENT (mA) 8-291