NJG1135MD7 CDMA DUAL BAND LNA GaAs MMIC Q GENERAL DESCRIPTION The NJG1135MD7 is a GaAs LNA MMIC designed for CDMA2000 dual band (Cellular and PCS) application. The NJG1135MD7 has LNA pass-through function to select high gain mode or low gain. The NJG1135MD7 achieved high IIP3 and low noise figure at the high gain mode, and low current consumption at the low gain mode. An ultra-small and ultra-thin EQFN14-D7 package is adopted. Q FEATURES OLow voltage operation OLow control voltage operation Q PACKAGE OUTLINE NJG1135MD7 +2.8V typ. +1.8V min. [LNA high gain mode] OHigh input IP3 +10dBm typ. +8dBm typ. +16dB typ. 1.4dB typ. OHigh gain OLow noise figure [LNA low gain mode] OLow current consumption OHigh input IP3 @ f=880MHz @ f=1960MHz @ f=880MHz / 1960MHz @ f=880MHz / 1960MHz 30uA typ. +19dBm typ. @ f=880MHz +17dBm typ. @ f=1960MHz EQFN14-D7 (Package size: 1.6x1.6x0.397mm typ., Lead and Halogen-Free) O Ultra-small and ultra-thin package Q PIN CONFIGURATION (Top View) 11 10 9 8 12 Cellular 7 13 PCS 6 14 5 1 2 3 Pin Connection 1. GND 2. VCTL2 3. VCTL1 4. GND 5. RFOUT1 6. RFOUT2 7. GND 8. GND 9. GND 10. GND 11. GND 12. RFIN2 13. RFIN1 14. GND 4 Q TRUETH TABLE "H"=VCTL(H), "L"=VCTL(L) VCTL1 VCTL2 L L H H L H L H Cellular band LNA Bypass OFF ON ON OFF OFF ON ON OFF PCS band LNA Bypass OFF ON OFF ON ON OFF ON OFF Note: Specifications and description listed in this datasheet are subject to change without notice. Ver. 2009-11-25 -1- NJG1135MD7 Q ABSOLUTE MAXIMUM RATINGS (Ta=+25C, Zs=Zl=50) PARAMETERS SYMBOL Supply voltage VDD Control voltage VCTL CONDITIONS RATINGS UNITS 5.0 V VCTL1, VCTL2 terminal 5.0 V Input power Pin VDD=2.8V +15 dBm Power dissipation PD 4-layer FR4 PCB with through-hole (74.2x74.2mm), Tj=150C 1300 mW Operating temperature Topr -40~+85 C Storage temperature Tstg -55~+150 C Q ELECTRICAL CHARACTERISTICS 1 (DC CHARACTERISTICS) (General Conditions: VDD=2.8V, Ta=+25C, Zs=Zl=50) PARAMETERS MIN TYP MAX UNITS VDD 2.65 2.8 2.95 V Control voltage (High) VCTL(H) 1.8 2.8 2.95 V Control voltage (Low) VCTL(L) -0.3 0 0.3 V Operating voltage Operating current1 (Cellular Band High Gain mode) Operating current2 (PCS Band High Gain mode) Operating current3 SYMBOL IDD1 IDD2 CONDITIONS RF OFF, VCTL1=0V, VCTL2=2.8V RF OFF, VCTL1=2.8V, VCTL2=0V RF OFF, VCTL1=0V, VCTL2=0V - 10 14 mA - 10 14 mA - 30 60 A (LNA all off mode) IDD3 Control current1 ICTL1 RF OFF, VCTL1=2.8V - 17 30 A Control current2 ICTL2 RF OFF, VCTL2=2.8V - 17 30 A -2- NJG1135MD7 Q ELECTRICAL CHARACTERISTICS 2 (Cellular Band: LNA High Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Ta=+25C, Zs=Zl=50, with application circuit) PARAMETERS Small signal gain 1 Noise figure 1 1dB gain compression input power 1 3rd order input intercept point 1 SYMBOL Gain1 NF1 CONDITIONS Exclude PCB, Connector Losses (input and output) 0.11dB Exclude PCB, Connector Losses (input) 0.06dB P-1dB_1 IIP3_1 f1=fRF, f2=fRF+100kHz, Pin=-25dBm MIN TYP MAX UNITS 14.5 16.0 - dB - 1.4 1.8 dB -8 -4 - dBm +7 +10 - dBm RF IN VSWR 1 VSWRi _1 - 1.5 2.0 RF OUT VSWR 1 VSWRo_1 - 1.5 2.0 Q ELECTRICAL CHARACTERISTICS 3 (Cellular Band: LNA Low Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=0V, fRF=880MHz, Ta=+25C, Zs=Zl=50, with application circuit) PARAMETERS Small signal gain 2 Noise figure 2 1dB gain compression input power 2 3rd order input intercept point 2 SYMBOL Gain2 NF2 CONDITIONS Exclude PCB, Connector Losses (input and output) 0.11dB Exclude PCB, Connector Losses (input and output) 0.11dB P-1dB_2 IIP3_2 f1=fRF, f2=fRF+100kHz, Pin=-12dBm MIN TYP MAX UNITS -4.0 -2.5 - dB - 2.5 5.0 dB +3.5 +10.5 - dBm +15 +19 - dBm RF IN VSWR 2 VSWRi _2 - 2.0 2.5 RF OUT VSWR 2 VSWRo_2 - 1.5 2.0 -3- NJG1135MD7 Q ELECTRICAL CHARACTERISTICS 4 (PCS Band: LNA High Gain Mode) (General Conditions: VDD=2.8V, VCTL1=2.8V, VCTL2=0V, fRF=1960MHz, Ta=+25C, Zs=Zl=50, with application circuit) PARAMETERS Small signal gain 3 Noise figure 3 1dB gain compression input power 3 3rd order input intercept point 3 SYMBOL Gain3 NF3 CONDITIONS Exclude PCB, Connector Losses (input and output) 0.22dB Exclude PCB, Connector Losses (input) 0.12dB P-1dB_3 IIP3_3 f1=fRF, f2=fRF+100kHz, Pin=-25dBm MIN TYP MAX UNITS 14.5 16.0 - dB - 1.4 1.8 dB -10 -6 - dBm +5 +8 - dBm RF IN VSWR 3 VSWRi _3 - 2.3 3.1 RF OUT VSWR 3 VSWRo_3 - 1.5 2.2 Q ELECTRICAL CHARACTERISTICS 5 (PCS Band: LNA Low Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=0V, fRF=1960MHz, Ta=+25C, Zs=Zl=50, with application circuit) PARAMETERS Small signal gain 4 Noise figure 4 1dB gain compression input power 4 3rd order input intercept point 4 SYMBOL Gain4 NF4 CONDITIONS Exclude PCB, Connector Losses (input and output) 0.22dB Exclude PCB, Connector Losses (input and output) 0.22dB P-1dB_4 IIP3_4 f1=fRF, f2=fRF+100kHz, Pin=-12dBm MIN TYP MAX UNITS -5.0 -3.5 - dB - 4.0 5.5 dB +1.5 +8.5 - dBm +13 +17 - dBm RF IN VSWR 4 VSWRi _4 - 2.3 2.9 RF OUT VSWR 4 VSWRo_4 - 1.5 2.0 -4- NJG1135MD7 Q TERMINAL INFOMATION No. SYMBOL DESCRIPTION 1 GND 2 VCTL2 3 VCTL1 4 GND 5 RFOUT1 6 RFOUT2 7 GND Ground terminal. This terminal is not connected with internal circuit. 8 GND Ground terminal. 9 GND Ground terminal. This terminal is not connected with internal circuit. 10 GND Ground terminal. This terminal is not connected with internal circuit. 11 GND Ground terminal. 12 RFIN2 13 RFIN1 14 GND Ground terminal. Control port 2. This terminal is set to more than +1.8V~+2.95V of logical high level for high gain mode of cellular band LNA, and set to -0.3V~+0.3V of logical low level for low gain mode of cellular band LNA. Control port 1. This terminal is set to more than +1.8V~+2.95V of logical high level for high gain mode of PCS band LNA, and set to -0.3V~+0.3V of logical low level for low gain mode of PCS band LNA. Ground terminal. RF output terminal of PCS band signal. RF signal and DC power is input through external matching circuit connected to this terminal. External matching circuit and DC blocking capacitor are required. RF output terminal of cellular band signal. RF signal and DC power is input through external matching circuit connected to this terminal. External matching circuit and DC blocking capacitor are required. RF input matching required. RF input matching required. terminal of cellular band signal. RF signal is input through external circuit connected to this terminal. A DC blocking capacitor is not terminal of PCS band signal. RF signal is input through external circuit connected to this terminal. A DC blocking capacitor is not Ground terminal. This terminal is not connected with internal circuit. Notes: 1) Ground terminal (No.1, 4, 8, and 11) should be connected with the ground plane as close as possible for good RF performance, because distance to GND makes parasitic inductance. -5- NJG1135MD7 Q ELECTRICAL CHARACTERISTICS (Cellular Band: LNA High Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Ta=+25C, Zs=Zl=50, with application circuit) Pout vs. Pin Gain, IDD vs. Pin f=880MHz f=880MHz 20 20 Gain (dB) Pout 0 -10 15 14 10 12 IDD (mA) Gain 10 Pout (dBm) 16 IDD 5 10 -20 P-1dB(IN)=-4.5dBm -30 -20 P-1dB(IN)=-4.5dBm -10 0 0 -40 10 -30 OIP3, IIP3 vs. frequency f1=880MHz, f2=f1+100kHz f1=840~920MHz, f2=f1+100kHz, Pin=-25dBm 26 20 25 Pout -20 8 10 0 Pout, IM3 vs. Pin 40 0 -10 Pin (dBm) OIP3 (dBm) Pout, IM3 (dBm) Pin (dBm) -20 IM3 -40 -60 -80 14 13 OIP3 24 12 23 11 22 10 21 IIP3 9 20 8 19 7 IIP3=+9.8dBm -100 -30 -20 -10 0 10 6 18 840 850 860 870 880 890 900 910 920 20 Pin (dBm) frequency (MHz) Gain, NF vs. frequency f=750~1000MHz 4 18 3.5 17 3 15 2.5 14 2 13 1.5 NF 12 0.5 11 10 750 800 850 900 frequency (MHz) -6- 1 950 0 1000 NF (dB) Gain (dB) 16 Gain IIP3 (dBm) -30 -40 NJG1135MD7 Q ELECTRICAL CHARACTERISTICS (Cellular Band: LNA High Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Ta=+25C, Zs=Zl=50, with application circuit) S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (~20GHz) S21, S12 (~20GHz) -7- NJG1135MD7 Q ELECTRICAL CHARACTERISTICS (Cellular Band: LNA High Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Zs=Zl=50, with application circuit) Gain, NF vs. Temperature P-1dB(IN) vs. Temperature f=880MHz f=880MHz 18 3.5 Gain 3 15 2.5 14 2 13 1.5 NF 12 P-1dB(IN) (dBm) 16 1 11 10 -40 P-1dB(IN) -4 NF (dB) Gain (dB) 17 -2 4 -6 -8 -10 0.5 -20 0 20 40 60 80 -12 -40 0 100 -20 0 o 20 40 60 80 100 o Temperature ( C) Temperature ( C) VSWRi, VSWRo vs. Temperature OIP3, IIP3 vs. Temperature f=880MHz f1=880MHz, f2=f1+100kHz, Pin=-25dBm 27 3 13 OIP3 26 12 11 24 10 23 9 IIP3 VSWRi, VSWRo 25 IIP3 (dBm) OIP3 (dBm) 2.5 2 VSWRi 1.5 22 8 VSWRo 21 -40 -20 0 20 40 60 80 1 -40 7 100 -20 0 IDD, ICTL2 vs. Temperature 60 35 12 30 IDD 20 15 6 15 ICTL2 4 10 2 K factor 20 ICTL2 (uA) 25 8 10 5 o Ta=-40oC Ta=25 C o Ta=60 C Ta=0 C Ta=85 C o Ta=-20 C 5 o -20 0 20 40 60 o Temperature ( C) -8- 100 f=50M~20GHz 14 0 -40 80 K factor vs. frequency RF off IDD (mA) 40 Temperature ( C) Temperature ( C) 10 20 o o 80 0 100 0 0 5 10 o 15 frequency (GHz) 20 NJG1135MD7 Q ELECTRICAL CHARACTERISTICS (Cellular Band: LNA Low Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Ta=+25C, Zs=Zl=50, with application circuit) Pout vs. Pin Gain, IDD vs. Pin f=880MHz 0 -2 Pout -10 -20 250 Gain 200 -4 150 -6 100 IDD (uA) 0 Gain (dB) Pout (dBm) f=880MHz 10 IDD -30 -8 50 P-1dB(IN)=-+13.0dBm -20 -10 0 P-1dB(IN)=+13.0dBm 10 -10 -30 20 -20 Pin (dBm) 0 10 0 20 Pin (dBm) Pout, IM3 vs. Pin OIP3, IIP3 vs. frequency f1=840~920MHz, f2=f1+100kHz, Pin=-12dBm f1=880MHz, f2=f1+100kHz 40 26 26 20 25 25 0 24 24 Pout IIP3 OIP3 (dBm) Pout, IM3 (dBm) -10 -20 -40 -60 23 23 22 22 21 21 20 IM3 -80 OIP3 IIP3 (dBm) -40 -30 20 19 19 IIP3=+23.5dBm -100 -20 -10 0 10 20 18 18 840 850 860 870 880 890 900 910 920 30 Pin (dBm) frequency (MHz) Gain, NF vs. frequency f=750~1000MHz 0 8 -1 7 6 Gain -3 5 -4 4 -5 3 -6 2 NF -7 -8 750 800 850 900 950 NF (dB) Gain (dB) -2 1 0 1000 frequency (MHz) -9- NJG1135MD7 Q ELECTRICAL CHARACTERISTICS (Cellular Band: LNA Low Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Ta=+25C, Zs=Zl=50, with application circuit) S11, S22 - 10 - S21, S12 VSWR Zin, Zout S11, S22 (~20GHz) S21, S12 (~20GHz) NJG1135MD7 Q ELECTRICAL CHARACTERISTICS (Cellular Band: LNA Low Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Zs=Zl=50, with application circuit) P-1dB(IN) vs. Temperature Gain, NF vs. Temperature f=880MHz f=880MHz 8 -1 7 Gain 6 -3 5 -4 4 -5 3 NF -6 2 -7 1 -8 -40 -20 P-1dB(IN) 14 0 20 40 60 80 NF (dB) Gain (dB) -2 16 P-1dB(IN) (dBm) 0 12 10 8 6 4 -40 0 100 -20 0 20 OIP3, IIP3 vs. Temperature 26 26 2.5 24 IIP3 22 20 20 18 18 16 16 0 20 40 60 80 IIP3 (dBm) OIP3 (dBm) OIP3 3 VSWRi, VSWRo 28 -20 100 f=880MHz 28 14 -40 80 VSWRi, VSWRo vs. Temperature f1=880MHz, f2=f1+100kHz, Pin=-12dBm 22 60 Temperature ( C) Temperature ( C) 24 40 o o VSWRi 2 1.5 VSWRo 1 -40 14 100 -20 0 o 20 40 60 80 100 o Temperature ( C) Temperature ( C) IDD vs. Temperature K factor vs. frequency RF off f=50M~20GHz 60 20 50 15 30 K factor IDD (uA) 40 IDD 10 20 5 o Ta=-40oC 10 Ta=25 C o Ta=60 C Ta=0 C Ta=85 C o Ta=-20 C o 0 -40 0 -20 0 20 40 60 o Temperature ( C) 80 100 0 5 10 o 15 20 frequency (GHz) - 11 - NJG1135MD7 Q ELECTRICAL CHARACTERISTICS (PCS Band: LNA High Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=1960MHz, Ta=+25C, Zs=Zl=50, with application circuit) Pout vs. Pin Gain, IDD vs. Pin f=1960MHz f=1960MHz 20 20 14 Gain -10 15 12 10 10 5 -20 -20 P-1dB(IN)=-6.3dBm -10 0 0 -40 10 -30 -10 0 6 10 Pin (dBm) Pout, IM3 vs. Pin OIP3, IIP3 vs. frequency f1=1960MHz, f2=f1+100kHz f1=1.9~2.0GHz, f2=f1+100kHz, Pin=-25dBm 40 26 14 20 25 13 0 Pout 24 OIP3 (dBm) Pout, IM3 (dBm) Pin (dBm) -20 -20 -40 IM3 -60 -80 OIP3 12 23 11 22 10 IIP3 21 9 20 8 19 7 IIP3=+8.2dBm -100 -30 -20 -10 0 10 18 1.9 20 Gain, NF vs. frequency f=1.8~2.1GHz 18 4 17 3.5 2.5 14 2 13 1.5 NF 12 0.5 11 1.85 1.9 1.95 2 frequency (GHz) - 12 - 1 2.05 0 2.1 NF (dB) Gain (dB) 3 Gain 15 10 1.8 1.94 1.96 frequency (GHz) Pin (dBm) 16 1.92 1.98 2 6 IIP3 (dBm) -30 8 IDD P-1dB(IN)=-6.3dBm -30 -40 IDD (mA) Pout 0 Gain (dB) Pout (dBm) 10 NJG1135MD7 Q ELECTRICAL CHARACTERISTICS (PCS Band: LNA High Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=1960MHz, Ta=+25C, Zs=Zl=50, with application circuit) S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (~20GHz) S21, S12 (~20GHz) - 13 - NJG1135MD7 Q ELECTRICAL CHARACTERISTICS (PCS Band: LNA High Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=1960MHz, Zs=Zl=50, with application circuit) Gain, NF vs. Temperature P-1dB(IN) vs. Temperature f=1960MHz f=1960MHz 18 3.5 Gain 3 15 2.5 14 2 13 1.5 NF 12 1 11 10 -40 P-1dB(IN) (dBm) -4 16 NF (dB) Gain (dB) 17 -2 4 -6 P-1dB(IN) -8 -10 0.5 -20 0 20 40 60 80 -12 -40 0 100 -20 0 o 20 40 60 80 100 o Temperature ( C) Temperature ( C) OIP3, IIP3 vs. Temperature VSWRi, VSWRo vs. Temperature f1=1960MHz, f2=f1+100kHz, Pin=-25dBm 26 f=1960MHz 3 12 OIP3 25 11 24 10 23 9 8 VSWRi, VSWRo IIP3 22 IIP3 (dBm) OIP3 (dBm) 2.5 VSWRi 2 1.5 21 20 -40 VSWRo 7 -20 0 20 40 60 80 1 -40 6 100 -20 0 o 20 40 60 Temperature ( C) K factor vs. frequency RF off f=50M~20GHz 14 35 12 30 20 o Ta=-40oC Ta=25 C o Ta=60 C Ta=0 C Ta=85 C o Ta=-20 C o 15 ICTL1 4 10 2 5 -20 0 20 40 60 o Temperature ( C) - 14 - 80 0 100 K factor 6 ICTL1 (uA) IDD (mA) 20 o 15 25 IDD 8 0 -40 100 Temperature ( C) IDD, ICTL1 vs. Temperature 10 80 o 10 5 0 0 5 10 15 frequency (GHz) 20 NJG1135MD7 Q ELECTRICAL CHARACTERISTICS (PCS Band: LNA Low Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=1960MHz, Ta=+25C, Zs=Zl=50, with application circuit) Pout vs. Pin Gain, IDD vs. Pin f=1960MHz 10 0 250 0 -2 200 -20 -30 -4 150 -6 100 -8 -10 0 P-1dB(IN)=+9.0dBm 10 -10 -30 20 -20 0 10 0 20 Pin (dBm) Pout, IM3 vs. Pin OIP3, IIP3 vs. frequency f1=1960MHz, f2=f1+100kHz f1=1.9~2.0GHz, f2=f1+100kHz, Pin=-12dBm 40 22 22 20 21 21 20 20 0 Pout OIP3 (dBm) Pout, IM3 (dBm) Pin (dBm) -10 -20 -40 IM3 -60 19 18 18 17 17 16 -80 IIP3 19 OIP3 IIP3 (dBm) -20 50 IDD P-1dB(IN)=+9.0dBm -40 -30 IDD (uA) Gain Pout -10 Gain (dB) Pout (dBm) f=1960MHz 16 15 15 IIP3=+19.5dBm -100 -20 -10 0 10 20 14 1.9 30 Pin (dBm) 1.92 1.94 1.96 1.98 2 14 frequency (GHz) Gain, NF vs. frequency 9 -1 8 -2 7 -3 6 Gain -4 5 -5 4 NF -6 3 2 -7 -8 1.8 NF (dB) Gain (dB) f=1.8~2.1GHz 0 1.85 1.9 1.95 2 2.05 1 2.1 frequency (GHz) - 15 - NJG1135MD7 Q ELECTRICAL CHARACTERISTICS (PCS Band: LNA Low Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=1960MHz, Ta=+25C, Zs=Zl=50, with application circuit) S11, S22 VSWR S11, S22 (~20GHz) - 16 - S21, S12 Zin, Zout S21, S12 (~20GHz) NJG1135MD7 Q ELECTRICAL CHARACTERISTICS (PCS Band: LNA Low Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=1960MHz, Zs=Zl=50, with application circuit) Gain, NF vs. Temperature P-1dB(IN) vs. Temperature f=1960MHz -1 7 -2 6 -3 Gain NF 4 -5 3 -6 2 -7 1 -20 0 20 40 60 80 14 5 -4 -8 -40 16 P-1dB(IN) (dBm) 8 NF (dB) Gain (dB) f=1960MHz 0 12 P-1dB(IN) 10 8 6 4 -40 0 100 -20 0 o 24 20 22 OIP3 18 20 IIP3 18 14 16 12 14 40 60 80 3 2.5 VSWRi, VSWRo 22 20 100 f=1960MHz 26 IIP3 (dBm) OIP3 (dBm) f1=1960MHz, f2=f1+100kHz, Pin=-12dBm 0 80 VSWRi, VSWRo vs. Temperature 24 -20 60 Temperature ( C) OIP3, IIP3 vs. Temperature 10 -40 40 o Temperature ( C) 16 20 VSWRi 2 VSWRo 1.5 1 -40 12 100 -20 0 o 20 40 60 80 100 o Temperature ( C) Temperature ( C) IDD vs. Temperature K factor vs. frequency RF off f=50M~20GHz 60 20 50 15 30 K factor IDD (uA) 40 IDD 10 20 5 Ta=25oC Ta=-40oC 10 o Ta=60 C Ta=0 C Ta=85 C o Ta=-20 C o 0 -40 0 -20 0 20 40 60 o Temperature ( C) 80 100 0 5 10 o 15 20 frequency (GHz) - 17 - NJG1135MD7 Q APPLICATION CIRCUIT V DD 2.8V L5 L6 15n 10n 11 10 12 Cellular RFIN1 13 PCS 4.7n 8 7 L7 10n 0.01u L4 4.7n C2 100p 6 RFOUT2 L2 15n 14 5 RFOUT1 L3 1 2 V 2.8V / 0V 4 3 2 CTL V 6.8n 1 CTL 2.8V / 0V Parts list Parts ID L1, L2, L4 L3 - 18 - C3 L8 12n RFIN2 L1 9 Comments MURATA (LQP03T Series) TDK (MLK0603 Series) L5~L8 TAIYO-YUDEN (HK1005 Series) C1~C3 MURATA (GRM03 Series) C1 100p NJG1135MD7 Q TEST PCB LAYOUT (TOP VIEW) RFIN2 (Cellular) RFOUT2 (Cellular) L5 L6 L7 C2 L8 L1 L2 L3 L4 C3 C1 RFIN1 (PCS) VDD VCTL2 VCTL1 RFOUT1 (PCS) PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH=0.4mm (Z0=50ohm) PCB SIZE=17.0mm x 17.0mm PRECAUTION: In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC. - 19 - NJG1135MD7 Q PACKAGE OUTLINE (EQFN14-D7) 0.3970.03 1.60.05 1.60.05 0.075 S R0 .0 3 2R0 .0 6 0.176 S 0.11 0.05 0.010 0 .0 10 0 .00 8 S 0 .0 7 0 .0 3 08 2-R0. 0.05 C0. 1 6 .0 R0 0.74 .1 min0.15 0.210.10 A C0 "A" 0.075 B 3-R 0.2 0.2 0.4 Details of"A" part x UNITmm 0.210.1 0.06 0.18 0.04 0.05 M S AB SUBSTRATE MATERIALCopper TERMINAL FINISHSn- Bi plating MOLD MATERIALEpoxy resin MASSTYP.0.0034g Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. * Do NOT eat or put into mouth. * Do NOT dispose in fire or break up this product. * Do NOT chemically make gas or powder with this product. * To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. - 20 - [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: NJR: NJG1135MD7