Ver. 2009-11-25
NJG1135MD7
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1
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CDMA DUAL BAND LNA GaAs MMIC
Q GENERAL DESCRIPTION Q PACKAGE OUTLINE
The NJG1135MD7 is a GaAs LNA MMIC designed for CDMA2000 dual
band (Cellular and PCS) application. The NJG1135MD7 has LNA
pass-through function to select high gain mode or low gain.
The NJG1135MD7 achieved high IIP3 and low noise figure at the high
gain mode, and low current consumption at the low gain mode.
An ultra-small and ultra-thin EQFN14-D7 package is adopted.
Q FEATURES
OLow voltag e operation +2.8V typ.
OLow control voltage operation +1.8V min.
[LNA hig h gain mode]
OHigh input IP3 +10dBm typ. @ f=880MHz
+8dBm typ. @ f=1960MHz
OHigh gain +16dB typ. @ f=880MHz / 1960MHz
OLow noise fi gure 1.4dB typ. @ f=880MHz / 1960MHz
[LNA low gain mode]
OLow current consumption 30uA typ.
OHigh input IP3 +19dBm typ. @ f=880MHz
+17dBm typ. @ f=1960MHz
O Ultra-small and ultra-thin p ackage EQFN14-D7 (Package size: 1.6x1.6x0.397mm typ ., Lead and Halogen-Free)
Q PIN CONFIGURATION
Pin Connection
1. GND 8. GND
2. VCTL2 9. GND
3. VCTL1 10. GND
4. GND 11. GND
5. RFOUT1 12. RFIN2
6. RFOUT2 13. RFIN1
7. GND 14. GND
Q TRUETH TABLE
“H”=VCTL(H), “L”=VCTL(L) Cellular band PCS band
VCTL1 VCTL2 LNA Bypass LNA Bypass
L L OFF ON OFF ON
L H ON OFF OFF ON
H L OFF ON ON OFF
H H ON OFF ON OFF
Note: S pecification s and description liste d in this datasheet ar e subject to change without notice.
NJG1135MD7
(Top V iew)
1234
5
6
7
8910
11
12
13
14
PCS
Cellular
NJG1135MD7
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Q ABSOLUTE MAXIMUM RATINGS (Ta=+25°C, Zs=Zl=50Ω)
PARAMETERS SYMBOL CONDITIONS RATINGS UNITS
Supply volta ge VDD 5.0 V
Control volt age VCTL VCTL1, VCTL2 terminal 5.0 V
Input power Pin V
DD=2.8V +15 dBm
Power dissipation PD 4-layer FR4 PCB with th rough-hole
(74.2x74.2mm), Tj=150°C 1300 mW
Operating temperat ure Topr -40~+85 °C
S torage t emperature Tstg -55~+150 °C
Q ELECTRICAL CHARACTERISTICS 1 (DC CHARACTERISTICS)
(General Conditions: VDD=2.8V, Ta=+25°C, Zs=Zl=50Ω)
PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS
Operating volt age VDD 2.65 2.8 2.95 V
Control volt age (High) VCTL(H) 1.8 2.8 2.95 V
Control volt age (Low) VCTL(L) -0.3 0 0.3 V
Operating current 1
(Cellular Band High Gain mode) IDD1 RF OFF,
VCTL1=0V, VCTL2=2.8V - 10 14 mA
Operating current 2
(PCS Band High Gain m ode) IDD2 RF OFF,
VCTL1=2.8V, VCTL2=0V - 10 14 mA
Operating current 3
(LNA all off mode) IDD3 RF OFF,
VCTL1=0V, VCTL2=0V - 30 60
μA
Control current1 ICTL1 RF OFF, VCTL1=2.8V - 17 30
μA
Control current2 ICTL2 RF OFF, VCTL2=2.8V - 17 30
μA
NJG1135MD7
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3
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Q ELECTRICAL CHARACTERISTICS 2 (Cellular Band: LNA High Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)
PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS
Small signal gain 1 Gain1 Exclude PCB, Connector Losses
(input and output) 0.11dB 14.5 16.0 - dB
Noise figure 1 NF1 Exclude PCB, Connector Losses
(input) 0.06dB - 1.4 1.8 dB
1dB gain compression
input power 1 P-1dB_1 -8 -4 - dBm
3rd order input
intercept point 1 IIP3_1 f1=fRF, f2=fRF+100kHz,
Pin=-25dBm +7 +10 - dBm
RF IN VSWR 1 VSWRi _1 - 1.5 2.0
RF OUT VSWR 1 VSWRo_1 - 1.5 2.0
Q ELECTRICAL CHARACTERISTICS 3 (Cellular Band: LNA Low Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=0V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)
PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS
Small signal gain 2 Gain2 Exclude PCB, Connector Losses
(input and output) 0.11dB -4.0 -2.5 - dB
Noise figure 2 NF2 Exclude PCB, Connector Losses
(input and output) 0.11dB - 2.5 5.0 dB
1dB gain compression
input power 2 P-1dB_2 +3.5 +10.5 - dBm
3rd order input
intercept point 2 IIP3_2 f1=fRF, f2=fRF+100kHz,
Pin=-12dBm +15 +19 - dBm
RF IN VSWR 2 VSWRi _2 - 2.0 2.5
RF OUT VSWR 2 VSWRo_2 - 1.5 2.0
NJG1135MD7
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4
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Q ELECTRICAL CHARACTERISTICS 4 (PCS Band: LNA High Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=2.8V, VCTL2=0V, fRF=1960MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)
PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS
Small signal gain 3 Gain3 Exclude PCB, Connector Losses
(input and output) 0.22dB 14.5 16.0 - dB
Noise figure 3 NF3 Exclude PCB, Connector Losses
(input) 0.12dB - 1.4 1.8 dB
1dB gain compression
input power 3 P-1dB_3 -10 -6 - dBm
3rd order input
intercept point 3 IIP3_3 f1=fRF, f2=fRF+100kHz,
Pin=-25dBm +5 +8 - dBm
RF IN VSWR 3 VSWRi _3 - 2.3 3.1
RF OUT VSWR 3 VSWRo_3 - 1.5 2.2
Q ELECTRICAL CHARACTERISTICS 5 (PCS Band: LNA Low Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=0V, fRF=1960MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)
PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS
Small signal gain 4 Gain4 Exclude PCB, Connector Losses
(input and output) 0.22dB -5.0 -3.5 - dB
Noise figure 4 NF4 Exclude PCB, Connector Losses
(input and output) 0.22dB - 4.0 5.5 dB
1dB gain compression
input power 4 P-1dB_4 +1.5 +8.5 - dBm
3rd order input
intercept point 4 IIP3_4 f1=fRF, f2=fRF+100kHz,
Pin=-12dBm +13 +17 - dBm
RF IN VSWR 4 VSWRi _4 - 2.3 2.9
RF OUT VSWR 4 VSWRo_4 - 1.5 2.0
NJG1135MD7
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5
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Q TERMINAL INFOMATION
Notes:
1) Ground terminal (No .1, 4, 8, and 11) should be connected w ith the ground pl ane as close as possib le
for good RF performan ce, because distance t o GND makes parasiti c inductance.
No. SYMBOL DESCRIPTION
1 GND Ground terminal.
2 VCTL2
Control port 2. Th is terminal is set to mor e than +1.8V~+2.95V of lo gical high level
for high gain mode of cellular band LNA, and set to –0.3V~+0.3V of logical low
level for low g ain mode of cellular band LNA.
3 VCTL1
Control port 1. Th is terminal is set to mor e than +1.8V~+2.95V of lo gical high level
for high gain mode of PCS band LNA, and set to –0.3 V~+0.3V of logical low level
for low gain mode o f PCS band LNA.
4 GND Ground terminal.
5 RFOUT1
RF output terminal of PCS band signal. RF signal and DC power is input through
external matching circuit connected to this terminal. External matching circuit and
DC blocking capacit or are required.
6 RFOUT2
RF output terminal of cellular band signal. RF signal and DC power is input
through external matching circuit connected to this terminal. External matching
circuit and D C blocking capacitor are required.
7 GND Ground terminal. This term inal is not connected with internal circuit.
8 GND Ground terminal.
9 GND Ground terminal. This term inal is not connected with internal circuit.
10 GND Ground terminal. This terminal is not connected with intern al circuit.
11 GND Ground terminal.
12 RFIN2
RF input terminal of cellular band signal. RF signal is input through external
matching circuit connected to this terminal. A DC blocking capacitor is not
required.
13 RFIN1
RF input terminal of PCS band signal. RF signal is input through external
matching circuit connected to this terminal. A DC blocking capacitor is not
required.
14 GND Ground terminal. This terminal is not connected with intern al circuit.
NJG1135MD7
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6
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Q ELECTRICAL CHARACTERISTICS (Cellular Band: LNA High Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)
-30
-20
-10
0
10
20
-40 -30 -20 -10 0 10
Pout vs. Pin
Pout (dBm)
Pin (dBm)
Pout
P-1dB(IN)=-4.5dBm
f=880MHz
0
5
10
15
20
-40 -30 -20 -10 0 10
Gain, IDD vs. Pin
8
10
12
14
16
Gain (dB )
Pin (dBm)
Gain
P-1dB(IN)=-4.5dBm
f=880MHz
IDD
IDD (mA)
-100
-80
-60
-40
-20
0
20
40
-30 -20 -10 0 10 20
Pout, IM3 vs. Pin
Pout, IM3 (dBm)
Pin (dBm)
Pout
IIP3=+9.8dBm
f1=880MHz, f2=f1+100kHz
IM3
10
11
12
13
14
15
16
17
18
750 800 850 900 950 1000
Gain, NF vs. frequency
0
0.5
1
1.5
2
2.5
3
3.5
4
Gain (dB )
frequency (MHz)
Gain
f=750~1000MHz
NF
NF (dB)
18
19
20
21
22
23
24
25
26
840 850 860 870 880 890 900 910 920
OIP3, IIP3 vs. frequency
6
7
8
9
10
11
12
13
14
OIP3 (dBm)
frequency (MHz)
OIP3
f1=840~920MHz, f2=f1+100kHz, Pin=-25dBm
IIP3
IIP3 (dBm)
NJG1135MD7
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7
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Q ELECTRICAL CHARACTERISTICS (Cellular Band: LNA High Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)
S11, S22 S21, S12
VSWR Zin, Zout
S21, S12 (~20GHz) S11, S22 (~20GHz)
NJG1135MD7
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8
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Q ELECTRICAL CHARACTERISTICS (Cellular Band: LNA High Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Zs=Zl=50Ω, with appli cation circuit)
0
5
10
15
20
0 5 10 15 20
K factor vs. frequency
Ta=-40
o
C
Ta=-20
o
C
Ta=0
o
C
Ta=25
o
C
Ta=60
o
C
Ta=85
o
C
K factor
frequency (GHz)
f=50M~20GHz
0
2
4
6
8
10
12
14
-40 -20 0 20 40 60 80 100
IDD, ICTL2 vs. Temperature
0
5
10
15
20
25
30
35
IDD (mA)
Temperature (
o
C)
IDD
RF off
ICTL2
ICTL2 (uA)
10
11
12
13
14
15
16
17
18
-40-200 20406080100
Gain, NF vs. Temperature
0
0.5
1
1.5
2
2.5
3
3.5
4
Gain (dB )
Temperature (
o
C)
Gain
f=880MHz
NF
NF (dB)
-12
-10
-8
-6
-4
-2
-40-200 20406080100
P-1dB(IN) vs. Temperature
P-1dB(IN) (d Bm)
Temperature (
o
C)
P-1dB(IN)
f=880MHz
1
1.5
2
2.5
3
-40-200 20406080100
VSWRi, VSWRo vs. Temperature
VSWRi, VSWRo
Temperature (
o
C)
VSWRi
f=880MHz
VSWRo
21
22
23
24
25
26
27
-40-200 20406080100
OIP3, IIP3 vs. Temperature
7
8
9
10
11
12
13
OIP3 (dBm)
Temperature (
o
C)
OIP3
f1=880MHz, f2=f1+100kHz, Pin=-25dBm
IIP3
IIP3 (dBm)
NJG1135MD7
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9
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Q ELECTRICAL CHARACTERISTICS (Cellular Band: LNA Low Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)
-40
-30
-20
-10
0
10
-30 -20 -10 0 10 20
Pout vs. Pin
Pout (dBm)
Pin (dBm)
Pout
P-1dB(IN)=-+13.0dBm
f=880MHz
-10
-8
-6
-4
-2
0
-30 -20 -10 0 10 20
Gain, IDD vs. Pin
0
50
100
150
200
250
Gain (dB )
Pin (dBm)
Gain
P-1dB(IN)=+13.0dBm
f=880MHz
IDD
IDD (uA)
-100
-80
-60
-40
-20
0
20
40
-20-100 102030
Pout, IM3 vs. Pin
Pout, IM3 (dBm)
Pin (dBm)
Pout
IIP3=+23.5dBm
f1=880MHz, f2=f1+100kHz
IM3
-8
-7
-6
-5
-4
-3
-2
-1
0
750 800 850 900 950 1000
Gain, NF vs. frequency
0
1
2
3
4
5
6
7
8
Gain (dB )
frequency (MHz)
Gain
f=750~1000MHz
NF
NF (dB)
18
19
20
21
22
23
24
25
26
840 850 860 870 880 890 900 910 920
OIP3, IIP3 vs. frequency
18
19
20
21
22
23
24
25
26
OIP3 (dBm)
frequency (MHz)
OIP3
f1=840~920MHz, f2=f1+100kHz, Pin=-12dBm
IIP3
IIP3 (dBm)
NJG1135MD7
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10
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Q ELECTRICAL CHARACTERISTICS (Cellular Band: LNA Low Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)
S11, S22 (~20GHz) S21, S12 (~20GHz)
VSWR Zin, Zout
S21, S12 S11, S22
NJG1135MD7
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11
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Q ELECTRICAL CHARACTERISTICS (Cellular Band: LNA Low Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Zs=Zl=50Ω, with appli cation circuit)
-8
-7
-6
-5
-4
-3
-2
-1
0
-40-200 20406080100
Gain, NF vs. Temperature
0
1
2
3
4
5
6
7
8
Gain (dB )
Temperature (
o
C)
Gain
f=880MHz
NF
NF (dB)
4
6
8
10
12
14
16
-40 -20 0 20 40 60 80 100
P-1dB(IN) vs. Temperature
P-1dB(IN) (d Bm)
Temperature (
o
C)
P-1dB(IN)
f=880MHz
14
16
18
20
22
24
26
28
-40-200 20406080100
OIP3, IIP3 vs. Temperature
14
16
18
20
22
24
26
28
OIP3 (dBm)
Temperature (
o
C)
OIP3
f1=880MHz, f2=f1+100kHz, Pin=-12dBm
IIP3
IIP3 (dBm)
1
1.5
2
2.5
3
-40-200 20406080100
VSWRi, VSWRo vs. Temperature
VSWRi, VSWRo
Temperature (
o
C)
VSWRi
f=880MHz
VSWRo
0
5
10
15
20
0 5 10 15 20
K factor vs. frequency
Ta=-40oC
Ta=-20oC
Ta=0oC
Ta=25oC
Ta=60oC
Ta=85oC
K factor
frequency (GHz)
f=50M~20GHz
0
10
20
30
40
50
60
-40-200 20406080100
IDD vs. Temperature
IDD (uA)
Temperature (
o
C)
IDD
RF off
NJG1135MD7
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12
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Q ELECTRICAL CHARACTERISTICS (PCS Band: LNA High Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=1960MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)
-30
-20
-10
0
10
20
-40 -30 -20 -10 0 10
Pout vs. Pin
Pout (dBm)
Pin (dBm)
Pout
P-1dB(IN)=-6.3dBm
f=1960MHz
0
5
10
15
20
-40 -30 -20 -10 0 10
Gain, IDD vs. Pin
6
8
10
12
14
Gain (dB)
Pin (dBm)
Gain
P-1dB(IN)=-6.3dBm
f=1960MHz
IDD
IDD (mA)
-100
-80
-60
-40
-20
0
20
40
-30 -20 -10 0 10 20
Pout, IM3 vs. Pin
Pout, IM3 (dBm)
Pin (dBm)
Pout
IIP3=+8.2dBm
f1=1 960MH z , f2=f1+1 0 0kHz
IM3
10
11
12
13
14
15
16
17
18
1.8 1.85 1.9 1.95 2 2.05 2.1
Gain, NF vs. frequency
0
0.5
1
1.5
2
2.5
3
3.5
4
Gain (dB )
frequency (GHz)
Gain
f=1.8~2.1GHz
NF
NF (dB)
18
19
20
21
22
23
24
25
26
1.9 1.92 1.94 1.96 1.98 2
OIP3, IIP3 vs. frequency
6
7
8
9
10
11
12
13
14
OIP3 (dBm)
frequency (GHz)
OIP3
f1=1.9~2.0GHz, f2=f1+100kHz, Pin=-25dBm
IIP3
IIP3 (dBm)
NJG1135MD7
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13
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Q ELECTRICAL CHARACTERISTICS (PCS Band: LNA High Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=1960MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)
S11, S22 (~20GHz) S21, S12 (~20GHz)
Zin, Zout
VSWR
S11, S22 S21, S12
NJG1135MD7
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14
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Q ELECTRICAL CHARACTERISTICS (PCS Band: LNA High Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=1960MHz, Zs=Zl=50Ω, with appli cation circuit)
10
11
12
13
14
15
16
17
18
-40 -20 0 20 40 60 80 100
Gain, NF vs. Temperature
0
0.5
1
1.5
2
2.5
3
3.5
4
Gain (dB)
Temperature (
o
C)
Gain
f=1960MHz
NF
NF (dB)
-12
-10
-8
-6
-4
-2
-40-200 20406080100
P-1dB(IN) vs. Temperature
P-1dB(IN) (dBm)
Temperature (
o
C)
P-1dB(IN)
f=1960MHz
20
21
22
23
24
25
26
-40 -20 0 20 40 60 80 100
OIP3, IIP3 vs. Temperature
6
7
8
9
10
11
12
OIP3 (dBm)
Temperature (
o
C)
OIP3
f1=1 960M Hz , f2=f1 +1 00k Hz, Pin =- 25d Bm
IIP3
IIP3 (dBm)
1
1.5
2
2.5
3
-40-200 20406080100
VSWRi, VSWRo vs. Temperature
VSWRi, VSWRo
Temperature (oC)
VSWRi
f=1960MHz
VSWRo
0
2
4
6
8
10
12
14
-40 -20 0 20 40 60 80 100
IDD, ICTL1 vs. Temperature
0
5
10
15
20
25
30
35
IDD (mA)
Temperature (oC)
IDD
RF off
ICTL1
ICTL1 (uA)
0
5
10
15
20
0 5 10 15 20
K factor vs. frequency
Ta=-40
o
C
Ta=-20
o
C
Ta=0
o
C
Ta=25
o
C
Ta=60
o
C
Ta=85
o
C
K factor
frequency (GHz)
f=50M~20GHz
NJG1135MD7
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15
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Q ELECTRICAL CHARACTERISTICS (PCS Band: LNA Low Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=1960MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)
-40
-30
-20
-10
0
10
-30 -20 -10 0 10 20
Pout vs. Pin
Pout (dBm)
Pin (dBm)
Pout
P-1dB(IN)=+9.0dBm
f=1960MHz
-10
-8
-6
-4
-2
0
-30 -20 -10 0 10 20
Gain, IDD vs. Pin
0
50
100
150
200
250
Gain (dB)
Pin (dBm)
Gain
P-1dB(IN)=+9.0dBm
f=1960MHz
IDD
IDD (uA)
-100
-80
-60
-40
-20
0
20
40
-20-100 102030
Pout, IM3 vs. Pin
Pout, IM3 (dBm)
Pin (dBm)
Pout
IIP3=+19.5dBm
f1=1960MHz, f2=f1+100kHz
IM3
14
15
16
17
18
19
20
21
22
1.9 1.92 1.94 1.96 1.98 2
OIP3, IIP3 vs. frequency
14
15
16
17
18
19
20
21
22
OIP3 (dBm)
frequency (GHz)
OIP3
f1=1.9~2.0GHz, f2=f1+100kHz, Pin=-12dBm
IIP3
IIP3 (dBm)
-8
-7
-6
-5
-4
-3
-2
-1
0
1.8 1.85 1.9 1.95 2 2.05 2.1
Gain, NF vs. frequency
1
2
3
4
5
6
7
8
9
Gain (dB)
frequency (GHz)
Gain
f=1.8~2.1GHz
NF
NF (dB)
NJG1135MD7
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16
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Q ELECTRICAL CHARACTERISTICS (PCS Band: LNA Low Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=1960MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)
S11, S22 (~20GHz) S21, S12 (~20GHz)
Zin, Zout
VSWR
S11, S22 S21, S12
NJG1135MD7
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17
-
Q ELECTRICAL CHARACTERISTICS (PCS Band: LNA Low Gain Mode)
(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=1960MHz, Zs=Zl=50Ω, with appli cation circuit)
-8
-7
-6
-5
-4
-3
-2
-1
0
-40 -20 0 20 40 60 80 100
Gain, NF vs. Temperature
0
1
2
3
4
5
6
7
8
Gain (dB )
Temperature (oC)
Gain
f=1960MHz
NF
NF (dB)
4
6
8
10
12
14
16
-40-200 20406080100
P-1dB(IN) vs. Temperature
P-1dB(IN) (d Bm)
Temperature (oC)
P-1dB(IN)
f=1960MHz
10
12
14
16
18
20
22
24
-40 -20 0 20 40 60 80 100
OIP3, IIP3 vs. Temperature
12
14
16
18
20
22
24
26
OIP3 (dBm)
Temperature (oC)
OIP3
f1=1 960M Hz , f2=f1 +1 00k Hz, Pin =- 12d Bm
IIP3
IIP3 (dBm)
1
1.5
2
2.5
3
-40-200 20406080100
VSWRi, VSWRo vs. Temperature
VSWRi, VSWR o
Temperature (oC)
VSWRi
f=1960MHz
VSWRo
0
10
20
30
40
50
60
-40-200 20406080100
IDD vs. Temperature
IDD (uA)
Temperature (oC)
IDD
RF off
0
5
10
15
20
0 5 10 15 20
K factor vs. frequency
Ta=-40
o
C
Ta=-20
o
C
Ta=0
o
C
Ta=25
o
C
Ta=60
o
C
Ta=85
o
C
K factor
frequency (GHz)
f=50M~20GHz
NJG1135MD7
-
18
-
Q APPLICA TION CIRCUIT
Parts ID Comments
L1, L2, L4 MURATA (LQP03T Ser ies)
L3 TDK (MLK0603 Series)
L5~L8 TAIYO-YUDEN (HK1005 Series)
C1~C3 MURATA (GRM03 Series)
Parts list
RFOUT2
L7
10n
L3
6.8n
L4
4.7n
C1
100p
C2
100p
C3
0.01u
V DD
2.8V
RFOUT1
L1
4.7n L2
15n
L6
10n
L5
15n L8
12n
VCTL 2
2.8V / 0V VCTL 1
RFIN2
RFIN1
1 2 3 4
5
6
7
8910
11
12
13
14
PCS
Cellular
2.8V / 0V
NJG1135MD7
-
19
-
Q TEST PCB LAYOUT (TOP VIEW)
PCB (FR-4):
t=0.2mm
MICROSTRIP LINE WIDTH=0.4mm (Z0=50ohm)
PCB SIZE=17.0mm x 17.0mm
PRECAUTION:
In order not to couple with terminal RFIN and RFOUT, please layou t ground pattern under the IC.
RFOUT1 (PCS)
RFIN2 (Cellular)
RFIN1 (PCS)
V
DD
VCTL1
VCTL2
L1 L
2
L
3
L
4
L
5
L
6
L
7
L
8
C1
C
2
C
3
RFOUT2 (Cellular)
NJG1135MD7
-
20
-
Q P ACKAGE OUTLINE (EQFN14-D7)
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a h armful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this pro duct.
• Do NOT chemically make gas or powder with this product.
• T
o
waste this
p
roduct,
p
lease obe
y
the relatin
g
law of
y
ou
r
countr
y
.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care t
o
avoid these dama
g
es.
[CAUTION]
The specific ations on this dat abook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representativ e usages
of the product and not intended for the
guarant ee or permission of any right including
the industr ial rights.
Details of"A" part（×２）
B
φ0.05
S
M
AB
C0.1
"A"
0.05
S
3-R0.2
A
S
0.075
S
R0.06
2
-
R
0
.
0
8
2-R0.06
C
0
.
1
R0.03
1.6±0.05
1.6±0.05
0.397±0.03
0.010
min0.15
0.74
＋0.07
－0.03
0.21±0.10
0.21±0.1
0.18
－0.04
＋0.06
0.2
0.4
0.11
0.075
0.05
0.176
＋0.010
－0.008
UNIT：mm
SUBSTRATE MATERIAL：Copper
TERMINAL FINISH：Sn-Bi plating
MOLD MATERIAL：Epoxy resin
MASS（TYP.）：0.0034（g）
