©2001 Fairch ild Semicond uctor C orpo ration HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B
HGTG20N60C3, HGTP20N60C3,
HGT1S20N60C3S
45A, 600V, UFS Series N-Channel IGBT
This family of MOS gated high voltage switching devices
combining the best features of MOSFETs and bipolar
tra nsi stors. These devi ces have the high input impedance of
a MOSFET and the lo w on-s tate conduc tion lo ss of a bi polar
tra nsi stor . The m uch lower on-state voltag e dr op varies onl y
moderately betwe en 25oC and 150oC.
The IGBT is ideal for ma n y high voltage switching
applic ations operating at moderate frequencies where low
conducti on los ses are essential, such as: AC and DC mot or
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49178.
Symbol
Features
• 45A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oC
• Short Circuit Rating
• Lo w Conduction Loss
• Related Literature
- TB334 “Guideli nes for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC STYLE TO-247
JEDEC TO-220AB ( A LTERNATE VERSION)
JEDEC TO-263AB
Ordering Information
PART NUMBER PACKAGE BRAND
HGTG20N60C3 TO-247 G20N60C3
HGTP20N60C3 TO-220AB G20N60C3
HGT1S20N60C3S TO-263AB G20N60C3
NO TE: When ordering, use the entire part number . Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N60C3S9A.
C
E
G
G
C
E
COLLECTOR
(FLANGE)
GCE
COLLECTOR
(FLANGE)
GCOLLECTOR
E
(FLANGE)
INTERSIL CORP ORATION IGBT P R ODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
Data Sheet December 2001
©2001 Fairch ild Semicond uctor C orpo ration HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified ALL TYPES UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 600 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 45 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 20 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 300 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate to Emitte r Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 20A at 600V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD164 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/oC
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV 100 mJ
Operating and Storage Junction Te mperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300
260
oC
oC
Short Circuit Withst and T ime (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 4µs
Short Circuit Withst and T ime (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 10 µs
CAUTION: S tresses ab ove those listed in “ Absolute Maxi mum Rating s” may cause per manen t damage to the device. This is a stress on ly rating and operatio n of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG = 10Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT S
Collector to Emitter Breakdown Voltag e BVCES IC = 250µA, VGE = 0V 600 - - V
Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 15 28 - V
Collector to Emitter Leakage Current ICES VCE = BVCES TC = 25oC - - 250 µA
TC = 150oC--5.0mA
Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110
VGE = 15V TC = 25oC-1.41.8V
TC = 150oC-1.51.9V
Gate to Emitter Threshold V oltage VGE(TH) IC = 250µA, VCE = VGE 3.4 4.8 6.3 V
Gate to Emitter Leakage Current IGES VGE = ±20V - - ±250 nA
Switching SOA SSOA TJ = 150oC, RG =
10Ω, VGE = 15V,
L = 100µH
VCE = 480V 120 - - A
VCE = 600V 20 - - A
Gate to Emitter Plateau Voltage VGEP ICE = IC110, VCE = 0.5 BVCES -8.4- V
On-State Gate Charge QG(ON) ICE = IC110
VCE = 0.5 BVCES VGE = 15V - 91 110 nC
VGE = 20V - 122 145 nC
Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 10Ω
L = 1mH
Test Circuit (Figure 17)
-2832ns
Current Rise Time trI -2428ns
Current Turn-Off Delay Time td(OFF)I - 151 210 ns
Current Fall Time tfI -5598ns
Turn-On Energy (Note 4) EON1 - 295 320 µJ
Turn-On Energy (Note 4) EON2 - 500 550 µJ
Turn-Off Energy (Note 3 ) EOFF - 500 700 µJ
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
©2001 Fairch ild Semicond uctor C orpo ration HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B
Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 150oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 10Ω
L = 1mH
Test Circuit (Figure 17)
-2832ns
Current Rise Time trI -2428ns
Current Turn-Off Delay Time td(OFF)I - 280 450 ns
Current Fall Time tfI - 108 210 ns
Turn-On Energy (Note 4) EON1 - 380 410 µJ
Turn-On Energy (Note 4) EON2 -1.01.1mJ
Turn-Off Energy (Note 3 ) EOFF -1.21.7mJ
Thermal Resistance Junction To Case RθJC - - 0.76 oC/W
NOTES:
3. Turn-Off Energy Loss (EOFF) is def ined as the integr al of the instantaneous po wer loss starting at the trailing edge of t he input pulse and ending
at the point where th e collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No . 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
4. V alues for two Turn-On loss conditions are shown for the convenience of the circ uit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the
turn-on loss when a typi cal dio de i s u sed i n t he t est circuit and the diode is a t t he same TJ as the IGBT. The diode type is specified in Fi gure 17.
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. DC COLLECT OR CURRENT vs CASE
TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECT OR TO
EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT S
TC, CASE TEMPERATURE (oC)
ICE, DC COLLECTOR CURRENT (A)
50
VGE = 15V
25 75 100 125 150
50
30
10
20
40
0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
60
700
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
20
300 400200100 500 600
0
80
100
120
140 TJ = 150oC, RG = 10Ω, VGE = 15V, L = 100µH
0
fMAX , OPERATING FREQUENCY (kHz)
2
ICE, COLLECTOR TO EMITTER CURRENT (A)
10
5
1
100
4010 20
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RØJC = 0.76oC/W, SEE NOTES
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
fMAX2 = (PD - PC) / (EON2 + EOFF)
TCVGE
110oC10V
15V
75oC
110oC
75oC10V
15V
TJ = 150oC, RG = 10Ω,
L = 1mH, VCE = 480V
VGE, GATE TO EMITTER VOLTAGE (V)
ISC, PEAK SHORT CIRCUIT CURRENT (A)
tSC, SHORT CIRCUIT WITHSTAND TIME (µs)
10 11 12 13 14 15
2
4
6
8
150
200
250
300
350
tSC
ISC
10
12
14
400
450
VCE = 360V, RG = 10Ω, TJ = 125oC
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
©2001 Fairch ild Semicond uctor C orpo ration HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B
FIGURE 5. COLLECTOR TO EMIT TER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMIT TER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECT OR TO
EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLL ECT OR T O
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECT OR TO
EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECT OR T O
EMITTER CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
02
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
20
84
80
60
40
100
610
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 10V
TC = -55oC
TC = 150oC
TC = 25oC
ICE, COLLECT OR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
150
200
250
300
023
0
50
14
100
DUTY CYCLE <0.5%, VGE = 15V
PULSE DURATION = 250µs
TC = 150oC
TC = -55oC
TC = 25oC
56
EON2, TURN-ON ENERGY LOSS (mJ)
2.5
1.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
2.0
1.0
0.5
2010 25155
3.0
030 35 40
TJ = 25oC, TJ = 150oC, VGE = 15V
TJ = 25oC, TJ = 150oC, VGE = 10V
RG = 10Ω, L = 1mH, VCE = 480V
3.5
4.0
ICE, COLLECTOR TO EMITTER CURRENT (A)
EOFF, TURN-OFF ENERGY LOSS (mJ)
0
0.5
252010 155
1.0
2.5
2.0
1.5
30 35 40
3.0
TJ = 25oC; VGE = 10V OR 15V
TJ = 150oC; VGE = 10V OR 15V
RG = 10Ω, L = 1mH, VCE = 480V
ICE, COLLECTOR TO EMITTER CURRENT (A)
tdI, TURN-ON DELAY TIME (ns)
20 10 155
25
30
35
40
403020 3525
45
50 RG = 10Ω, L = 1mH, VCE = 48 0V
TJ = 25oC, TJ = 150oC, VGE = 15V
TJ = 25oC, TJ = 150oC, VGE = 10V
ICE, COLLECTOR TO EMITTER CURRENT (A)
trI, RISE TIME (ns)
25
0
50
75
125
100
150
10 155403020 3525
175
200
TJ = 25oC AND TJ = 150oC, VGE = 15V
TJ = 25oC, TJ = 150oC, VGE = 10V
RG = 10Ω, L = 1mH, VCE = 480V
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
©2001 Fairch ild Semicond uctor C orpo ration HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR T O
EMITTER CURRENT FIGURE 12. FALL TIME vs COLL ECT OR T O EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. CAPACITANCE vs COLLECTO R TO EMITTER VOLTAGE
Typical Performance Curves Unless Otherwise Specified (Continued)
10 15 255
250
20
100
175
125
150
200
225
ICE, COLLECTOR TO EMITTER CURRENT (A)
td(OFF)I, TURN-OFF DELAY TIME (ns)
30 35 40
RG = 10Ω, L = 1mH, VCE = 480V
TJ = 150oC, VGE = 10V, VGE = 15V
TJ = 25oC, VGE = 10V, VGE = 15V
275
300
ICE, COLLECTOR TO EMITTER CURRENT (A)
tfI, FALL TIME ( ns )
60
80
100
40
50
70
90
10 20 255 15 303540
RG = 10Ω, L = 1mH, VCE = 480V
110
120
TJ = 150oC, VGE = 10V OR VGE = 15V
TJ = 25oC, VGE = 10V OR 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
50
100
150
5789106
VGE, GATE TO EMITTER VOLTAGE (V)
11
200
250
300
12 13 14 15
PULSE DURAT ION = 250µs
DUTY CYCLE <0.5%, VCE = 10V
TC = 150oC
TC = 25oC
TC = -55oC
Qg, GATE CHARGE (nC)
0
8
10
6
4
2
01020 40
VGE, GATE TO EMITTER VOLTAGE (V)
50 10030
12
14
16 IG (REF) = 1mA, RL = 15Ω, TC = 25oC
VCE = 400V
VCE = 200V
VCE = 600V
60 70 80 90
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0 5 10 15 20 25
0
C, CAPACITANCE (nF)
1
2
3
4
5
CIES
COES
CRES
FREQUENCY = 1MHz
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
©2001 Fairch ild Semicond uctor C orpo ration HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION T O CASE
Test Circuit and Waveforms
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 18. SWITCHING TEST WAVEFORMS
Typical Performance Curves Unless Otherwise Specified (Continued)
t1, RECTANGULAR PULSE DURATION (s)
ZθJC, NORMALIZED THERMAL RESPONSE
10-3
10-2
10-1
100
10-5 10-3 10-2 10-1 100101
10-4
0.1
0.2
0.05
0.02
SINGLE PULSE t1
t2
PD
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
0.5
0.01
RG = 10Ω
L = 1mH
VDD = 480V
+
-
RHRP3060
tfI
td(OFF)I trI
td(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
EOFF
EON2
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
©2001 Fairch ild Semicond uctor C orpo ration HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate- ins ul atio n dam age by the electrostatic d isc ha rge of
energy through the devices. When handling these devices,
care should be exercised to assure that the st atic charge
built in the handler ’s body capac itance is no t disc harged
through the device. With proper handling and application
procedures, howeve r, IGBTs are currently being extensivel y
used in production b y nume rous equipment m anuf acturers in
military, indus tria l and con su mer appli cations, with vi rtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the follo wing basic preca utions are
taken:
1. Prior to assem b ly int o a circ uit, al l lead s sho uld be k ept
shorted together either by the use of metal shorting
springs or by the insertion into conductive materi al suc h
as “ECCOSORBD™ LD26” or equivalent.
2. When de vi ces are remov ed by hand from their carriers,
the hand being u sed shoul d be grou nded b y any suitab le
means - for example, with a metallic wristband.
3. Tips of solderi ng iron s sho uld be grounded.
4. De vic es sho uld n e ver be inserted in to or r emo v ed from
circuits with power on.
5. Gate Voltage Rating - Ne v er e xceed the gate- vol tage
rat ing of VGEM. Exceeding the ra ted VGE can result in
permanent damage to the oxide la yer in the gate regio n.
6. Gate Terminatio n - The gates of these de vi ces are
essentially capacitors. Circuits that leave the gate open-
circuit ed or fl oating shoul d be a v oide d. Thes e condi tions
can resu lt in turn-on of the device d ue to voltage buil dup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - The se de vices do no t hav e an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
Operating Frequency Information
Op erating frequen cy in formation f or a typic al device
(Figure 3) is presen ted as a guide for estimati ng device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the inf o rmation s hown f o r a typical un it in Figure s 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The infor mation is based on meas urements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defin ed by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadti me (the de nominato r) has bee n arbit rarily held to 10%
of the on -sta te tim e for a 50% duty factor. Other definition s
are possible. td(OFF)I and td(ON)I are defined in Figure 18.
Device turn-off delay can establish a n addit io nal frequen cy
limitin g con diti on for an application other than TJM. td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allow able dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must
not exceed PD. A 50% duty factor was used (Figure 3) and
the conduction lo sses (PC) are approximated by
PC=(V
CE xI
CE)/2.
EON2 and EOFF are defined in the switching wavefo rms
shown in Figure 1 8. EON2 is the inte gral of the
instant aneous power lo ss (ICE x VCE) during turn-on and
EOFF is the integral of th e instantaneous power loss
(ICE xV
CE) during turn-off. All tail losses are included in
the calc ulation for EOFF; i.e., t he collector current equals
zero (ICE = 0).
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
Rev. H4
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
STAR*POWER is used under license
VCX™
