© 2006 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 800 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ800 V
VGS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C39A
IDM TC= 25°C, pulse width limited by TJM 100 A
IAR TC= 25°C22A
EAR TC= 25°C80mJ
EAS TC= 25°C 3.4 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, 10 V/ns
TJ≤ 150°C, RG = 10 Ω
PDTC= 25°C 694 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
VISOL 50/60 Hz, RMS, 1 minute 2500 V~
IISOL < 1 mA, 10 seconds 3000 V~
MdMounting torque 1.13/10 Nm/lb.in.
Terminal torque 1.13/10 Nm/lb.in.
Weight 30 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 800 μA 800 V
VGS(th) VDS = VGS, ID = 8 mA 3.0 5.0 V
IGSS VGS = ± 30 V, VDS = 0 V ± 200 nA
IDSS VDS = VDSS 50 μA
VGS = 0 V TJ = 125°C 1.5 mA
RDS(on) VGS = 10 V, ID = 0.5 ITD25, Note 1 190 mΩ
PolarHVTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN 44N80P VDSS = 800 V
ID25 =39 A
RDS(on) ≤≤
≤≤
≤190 mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤250 ns
DS99503E(06/06)
G
D
S
S
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate D = Drain
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
•International standard package
•Encapsulating epoxy meets
UL 94 V-0, flammability classification
•miniBLOC with Aluminium nitride
isolation
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
•Fast intrinsic Rectifier
Applications
•DC-DC converters
•Synchronous rectification
•Battery chargers
•Switched-mode and resonant-mode
power supplies
•DC choppers
•Temperature and lighting controls
•Low voltage relays
Advantages
•Easy to mount
•Space savings
•High power density
http://store.iiic.cc/
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 44N80P
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
gfs VDS= 20 V; ID = 0.5 ID25, Note 1 27 43 S
Ciss 12 nF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 910 pF
Crss 30 pF
td(on) 28 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = ID25 22 ns
td(off) RG = 1 Ω (External) 75 ns
tf27 ns
Qg(on) 200 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 67 nC
Qgd 65 nC
RthJC 0.18 °C/W
RthCS 0.05 °C/W
Source-Drain Diode Characteristic Values
TJ = 25°C unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 44 A
ISM Repetitive 100 A
VSD IF = IS, VGS = 0 V, Note 1 1.5 V
trr IF = 22 A, -di/dt = 100 A/μs 250 ns
QRM VR = 100 V, VGS = 0 V 0.8 μC
IRM 8.0 A
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2%
(M4 screws (4x) supplied)
SOT-227B (IXFN) Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
http://store.iiic.cc/
© 2006 IXYS All rights reserved
IXFN 44N80P
Fig . 2. Extended Output Charact eristics
@ 25
°
C
0
10
20
30
40
50
60
70
80
90
100
0 3 6 9 12 15 18 21 24 27 30
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
5V
Fig. 3. Ou tput Charac terist ics
@ 125
°
C
0
5
10
15
20
25
30
35
40
45
0 2 4 6 8 10121416
V
D S
- Volts
I
D
- Amperes
V
GS
= 10 V
7V
5V
6V
Fig. 1. Output Characteristics
@ 25
°
C
0
5
10
15
20
25
30
35
40
45
012345678
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
7V
5V
6V
Fig. 4. R
DS(on
)
Normalized to I
D
= 22A
V alue vs. Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
D S ( o n )
- N orm al ized
I
D
= 44A
I
D
= 22A
V
GS
= 10V
Fig. 5. R
DS(on)
Normalized to I
D
= 2 2A
Va lue vs. Dra in Current
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0 102030405060708090100
I
D
- Amperes
R
D S ( o n )
- N orm al ized
T
J
= 25
°
C
V
GS
= 10V T
J
= 12 5
°
C
Fig. 6. Drain Current vs . Case
Temperature
0
4
8
12
16
20
24
28
32
36
40
44
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade
I D - Amperes
http://store.iiic.cc/
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 44N80P
Fig. 11. Capacitance
10
100
1000
10000
100000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - Pi coFarads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 25 50 75 100 125 150 175 200
Q
G
- NanoCo ulombs
V
G S
- Vo lts
VDS
= 400V
ID
= 22A
IG
= 10mA
Fig. 7. Input Admitt ance
0
10
20
30
40
50
60
70
3.5 4 4.5 5 5.5 6 6.5
V
G S
- Volts
I
D
- Am peres
TJ = 1 25
°
C
25
°
C
- 40
°
C
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
0 1020304050607080
I
D
- Amper es
g f s
- Siem ens
TJ = - 40
°
C
25
°
C
125
°
C
Fig. 9. Source C urrent vs.
Sour ce -To-Drain Voltage
0
20
40
60
80
100
120
140
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
V
S D
- Volts
I
S
- Am peres
TJ
= 125
°
C
TJ
= 25
°
C
Fig . 12. Maximum T ransien t T h er m al
Resistance
0.01
0.10
1.00
0.001 0.01 0.1 1 10
Puls e W idth - Sec onds
R( t h ) J C - ºC / W
http://store.iiic.cc/
