Copy right@Daw in Electronic s Corp. All right reserv ed
DL2M50N5
Apr. 2008
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
Description
DA WIN ’ S D ual power MOS FET devices are designed f or swit ching
applications of high v oltage and current. (You have to connect external
f ast recovery diode rev erse connect ed across each MO S FE T)
The mount ing base of t he module is electr ica lly iso lated f rom
semiconductor element s f or simple heat -sink const ruct ion.
Features
☞RDS(ON) = 0.12ΩMax . @ V GS= 10V, I D=50A
☞Gat e C harge = 105nC(ty p. )
☞Improv ed dv/ dt Capability, High Ruggedness
☞Ma ximum Junction Temperat ure Range = 150℃
☞100% av alanche t est ed
☞I solation Ty pe Package
Applications
High effic ient SMPS, Active PFC
Absolute Maximu m Ratin g s@ Tj=25℃(Per Leg)
1/8
500V DUAL N-Channel MOSFET
Symbol Parameter Ratings UnitConditions
VDSS
VGS
ID
IDM (1)
EAS
EAR
dv/dt
PD
Tj
Tstg
Viso
TL
500
±20
50
30
200
2800
74
4.5
560
-40 ~ 150
-40 ~ 125
2500
4.0
V
V
A
A
A
mJ
mJ
V/ns
W
℃
℃
V
N.m
-
-
Tc = 25℃
Tc = 100℃
-
-
-
-
Tc = 25℃
-
-
AC 1 minute
-
-260 ℃
Drain-Source Voltage
Gate-Source Volt age
Cont inuous Drain Current
Pulsed Dra in Current (Note 1)
Sing le Pulsed Avalanche Energy (Not e 2)
Repet itiv e Av alanche Energy (Not e 1)
Peak D iode Recov ery dv/ dt (Note 3)
Maximum Power Dissipation
Operat ing Junction Temperat ure
St orage Temperature Range
I solation Volt age
Mounting screw T orque :M3
Ma ximum Lead Temp. f or soldering
Purposes, 1/8”f rom case f or 9 seconds
Equiv alent Circu it
E qu ivalent Circui t and P ackag e
Package : 6DM-2 Series
Please see the package out line inf ormat ion
S2D2G2D1 S1 G1
Copy right@Dawin Electronic s Corp. All right reserv ed
DL2M50N5
Apr. 2008
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
E l ectr ical Char acteristics o f M OS F ET @ TC=25℃(unless otherwise specified)
Symbol Parameter Values Units
Conditions Min. Typ. Max.
Drain - S ource Brea kdown Volt age
Temperat ure Coef f. of
Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
St at ic Drain-Source On-St at e
Resistance
Forward Transconductance
I nput capacitance
Output capacitance
Reverse t ransfer capacitance
Turn-on delay t ime
Tu rn -o n ris e time
Turn-off delay tim e
Turn-off fall time
Tot al Gat e Charge
Gate-Source Charge
Gat e-Drain Charge (Miller Charge)
500
-
-
-
3.0
-
-
-
-
-
-
-
-
-
-
-
-
0.5
-
-
-
0.09
20
6000
900
100
105
360
225
230
105
33
45
-
-
25
±100
5.0
0.12
-
-
-
-
-
-
-
-
-
-
-
V
V/℃
uA
nA
V
Ω
S
pF
ns
nC
VGS = 0V , ID= 250uA
VGS = 0V , ID= 250㎂
VDS = 500V , VGS = 0V
VGE =±30V
VDS = VGS , I D= 250uA
VGS= 10V, I D= 25A
VDS= 40V, ID= 25A
VGS = 0V, VDS= 25V, f= 1MHz
VDD = 250V , ID= 50A
RG= 25 Ω
(Not e 4,5)
VDS = 400V
VGS = 10V (Note 4, 5)
ID= 50A
2/8
BVDSS
ΔBVDSS/
ΔTJ
IDSS
IGSS
VGS(th)
RDS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Off Characteris tics
On C haracteristics
Dynamic C haracte ris tics
Copy right@Dawin Electronics Corp. All right reserv ed
DL2M50N5
Apr. 2008
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
3/8
E l ectr ical Char acteristics o f FRD @ TC=25℃(unless otherwise specif ied )
Symbol Parameter Values UnitConditions Min. Typ. Max.
Cont inuous Source Current
Pulsed Source C ur rent
Diode Forw ard Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
-
-
-
-
-
-
-
580
10
50
200
1.4
-
-
A
Th ermal Char acteristics an d Weight
Symbol Parameter Values UnitConditions Min. Typ. Max.
Thermal Resistance, Junction-t o-Case
Thermal Resistance, C ase-t o-Sink
Weight of Module
℃/W
℃/W
g
-
-
-
0.22
-
30
-
0.1
-
IS
ISM
VSD
trr
Qrr
RθJC
RθCS
Weight
I nt egral R everse p-n Junct ion
Diode in t he MO S FET
IS= 50A, VGS= 0V
IS= 50A, VGS= 0V ,
diF/ dt= 100A/ us
V
ns
uC
※NOTES
1. Repet itiv e rat ing : pulse w idt h limited by junction temperat ure
2. L= 1.46m H , IAS= 50A, VDD= 50V, RG= 2 5 Ω, start ing TJ= 25 ℃
3. ISD ≤50A, di/ dt ≤200A/ us, VDD≤BVDSS, starting TJ= 25 ℃
4. Pulse Test : Pulse widt h ≤300/ us, Duty Cy cle ≤2%
5. Essentially independent of operating t emperat ure
Copy right@Dawin Electronics Corp. All right reserv ed
DL2M50N5
Apr. 2008
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
P erfor m an ce Cur ves
ID, Dr ain Current [A]
VDS, Dr ain - Source Voltage [ V]
VGS
TOP: 15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
Bottom : 5.5V
10-1 100101
100
101
102
25℃
-55℃
150℃
10-1
100
101
246810
VGS, Gate- Source Voltage [ V]
ID, Dr ain Current [A]
0.4
0.3
0.2
0.1
0 30 60 80 120 150 180
VGS =10V
VGS =20V
* Note:
TJ=25℃
RDS(ON) [Ω],
Drain Source On-Resistance
IDR , R everse Drain Cu rrent [ A]
100
101
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source- Drain Volt age [ V]
ID, Dr ain Current [A]
VDS, Dr ain - Source Voltage [ V]
Capaci tance [pF]
QG, T otal Gate Ch arge [n C]
VGS , Gate-Sou rce Voltage [v]
150℃
25℃
* Notes:
1.VGS=0V
2.2 50us Pul se Test
* Notes:
1.2 50us Pul se Test
2.Tc=25℃
Fig 1. On – Region Characteristics
102
Fig 2. Transfer Characteristics
Notes:
1. VDS = 50V
2. 250uS Pulse Test
Fig 3. On – Resistance Variation vs.
Drain Current and Gate Voltage Fig 4. Body Diode Forward Voltage
Variation vs. Source Current and Temp.
0
2000
4000
6000
8000
10000
12000
10-1 100101
Ciss = Cgs + Cgd (Cds=shorted)
Coss=Cds + Cgd
Crss = Cgd
* Notes:
1.VGS = 0V
2. f = 1Mhz
Fig 5. Capacitance Characteristics
VDS = 100V
VDS = 250V
VDS = 400V
0 30 60 90 120 150 180
0
2
4
6
8
10
12
Fig 6. Gate Charge Characteristics
* Notes : ID=50A
4/8
Ciss
Coss
Crss
Copy right@Dawin Electronics Corp. All right reserv ed
DL2M50N5
Apr. 2008
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
P erfor m an ce Cur ves (Continued)
1.1
1.0
0.9
-100 -50 0 50 100 150
BVDSS (Normalized)
Drain - Source Breakdown Vol t age
TJ, Junction Tempera ture [℃]
1.2
0.8
* Notes:
1.VGS= 0V
2.ID= 250uA
Fig 7. Breakdown Voltage Variation
* Notes:
1.VGS= 10V
2.ID= 50A
-100 -50 0 50 100 150
RDS(ON) (Normalized)
Drain Source On-Resistance
2.5
1.5
0.5
3.0
0.0
1.0
2.0
TJ, Junction Tempera ture [℃]200
Fig 8. On-Resistance Variation
100101
100
10-1
10-2
101
102
103
102103
DC
VDS, Dr ain - Source Voltage [ V]
ID, Dr ain Current [A]
25 50 75 100 125
40
10
50
0
20
30
150
TC, Cas e Temp erature [℃]
Operation This Area is
Limited by RDS(ON)
* Notes:
1.TC= 25℃
2.TJ=150℃
3.S in gle Pu l se
Fig 9. Maximum Safe Operating Area Fig 10. Maximum Drain Current
vs. Case Temperature
ID, Dr ain Current [A]
ZΘJC(t), Thermal Response
10-2
10-1
10-3 Sing le puls e
t1, Squ are Wav e Pulse Duration [sec]
10-5 10-4 10-3 10-2 10-1 100101
* Notes:
1. Z ΘJC(t) = 0.17℃/W Max .
2. Duty Factor, D = t1/t2
3. TJM –T
C= PDM * Z ΘJC(t)
D=0.5
0.2
0.1
0.05
0.02
0.01
5/8
Fig 11. Transient Thermal Response Curve
10uS
100uS
1m S
10mS
t1t2
PDM
Copy right@Dawin Electronics Corp. All right reserv ed
DL2M50N5
Apr. 2008
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
Gate Charge Test Circuit & Waveform
Resi stive S wi tchi ng Test Circui t & Waveforms
Uncl amped Inductive Switching Test Ci rcuit & Waveforms
Same Type
as DUT
DUT
Charge
DUT
10V
VGS
10V
3mA
VDD
VDS
VGS
10V DUT
tp
VDS
Time
BVDSS
IAS
VDS
Qg
Qgd
Qgs
td(on)
tr
ton
td(on)
tr
toff
90%
10%
VDD ID (t)
VDS (t)
6/8
Copy right@Dawin Electronics Corp. All right reserv ed
DL2M50N5
Apr. 2008
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
Peak Di ode R ecovery dv/dt Test Circuit & Waveforms
VDS
VDD
Same Type
as DUT
* dv/dt controll ed by RG
* ISD controlled by pulse peri od
DUT
VGS
VGS
(Driver)
ISD
(DUT)
VDS
(DUT)
10V
ISD L
Driver
7/8
Copy right@Dawin Electronics Corp. All right reserv ed
DL2M50N5
Apr. 2008
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
8/8
P ackage Ou t L ine In fo rmatio n
6DM-2
Dimensions in m m
Φ3.2
LABEL PLATE
59±0.2
66±0.2
34±0.222.25±0.2
56.25±0.5
1.8±0.2
.8±0.2
1.9
1.5
0.1
MAX 8.15
7.62
2.5 3.5
3.5
Washer
10.8
3.5
8.3 5.7
3.57±0.2
