© Semiconductor Components Industries, LLC, 2014
November, 2014 Rev. 1
1Publication Order Number:
NTSV20H120CT/D
NTSV20H120CT
Low Forward Voltage
Trench-based Schottky
Rectifier
Features
Fine Lithography Trenchbased Schottky Technology for Very Low
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
High Frequency and DCDC Converters
Freewheeling and ORing diodes
Reverse Battery Protection
Instrumentation
Mechanical Characteristics
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 940 @ 0.125 in
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
TO220AB
CASE 221A
STYLE 6
3
4
1
1
3
2, 4
2
MARKING DIAGRAM
AY WW
TSV20H12G
AKA
TSV20H12G = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
AKA = Polarity Designator
G = PbFree Package
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See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
PIN CONNECTIONS
NTSV20H120CT
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2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
120 V
Average Rectified Forward Current
(Rated VR, TC = 124°C) Per device
(Rated VR, TC = 139°C) Per diode
IF(AV) 20
10
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 122°C) Per device
(Rated VR, Square Wave, 20 kHz, TC = 137°C) Per diode
IFRM 40
20
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM 125 A
Operating Junction Temperature TJ40 to +150 °C
Storage Temperature Tstg 40 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Typical Thermal Resistance JunctiontoCase
JunctiontoAmbient
RqJC
RqJA
1.7
50
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Rating Symbol Typ Max Unit
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 5 A, TJ = 25°C)
(IF = 10 A, TJ = 25°C)
(IF = 5 A, TJ = 125°C)
(IF = 10 A, TJ = 125°C)
vF0.679
0.931
0.562
0.653
1.03
0.71
V
Maximum Instantaneous Reverse Current (Note 1)
(VR = 90 V, TJ = 25°C)
(VR = 90 V, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
IR2.3
2.8
5.0
4.6
35
20
mA
mA
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
ORDERING INFORMATION
Device Package Shipping
NTSV20H120CTG TO220AB
(PbFree)
50 Units / Rail
NTSV20H120CT
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3
TYPICAL CHARACTERISTICS
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
VF
, INSTANTANEOUS FORWARD VOLTAGE (V)
1.61.41.21.00.60.40.20
0.1
1
10
100
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
12020100
Figure 5. Typical Junction Capacitance Figure 6. Current Derating per Leg
VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C)
1001010.1
10
1000
10,000
15012010080705040
0
5
10
15
20
iF
, INSTANTANEOUS FORWARD
CURRENT (A)
IR, INSTANTANEOUS REVERSE CURRENT (A)C, JUNCTION CAPACITANCE (pF)
IF(AV), AVERAGE FORWARD
CURRENT (A)
0.8
TA = 25°C
TA = 40°C
TA = 150°C
TA = 25°C
100
Square Wave
dc
90
RqJC = 1.7°C/W
TA = 125°C
VF
, INSTANTANEOUS FORWARD VOLTAGE (V)
1.61.41.21.00.60.40.20
0.1
1
10
100
iF
, INSTANTANEOUS FORWARD
CURRENT (A)
0.8
TA = 25°C
TA = 40°C
TA = 150°C
TA = 125°C
TA = 125°C
TA = 150°C
30 40 50 60 70 80 90 100 110
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
12020100
1.E07
IR, INSTANTANEOUS REVERSE CURRENT (A)
TA = 25°C
TA = 125°C
TA = 150°C
30 40 50 60 70 80 90 100 110
1.E06
1.E05
1.E04
1.E03
1.E02
1.E01
1.E+00
1.E07
1.E06
1.E05
1.E04
1.E03
1.E02
1.E01
1.E+00
TJ = 25°C
60 110 130 140
NTSV20H120CT
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4
TYPICAL CHARACTERISTICS
Figure 7. Current Derating, Device Figure 8. Forward Power Dissipation
TC, CASE TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (A)
1401201009080605040
0
5
10
25
35
40
9863210
0
5
10
15
20
25
30
IF(AV), AVERAGE FORWARD CURRENT (A)
PF(AV), AVERAGE FORWARD POW-
ER DISSIPATION (W)
15
20
30
Square Wave
dc
RqJC = 1.7°C/W
Square Wave
dc
5
IPK/IAV = 10
IPK/IAV = 5
IPK/IAV = 20
70 110 130 150
TJ = 150°C
47
Figure 9. Typical Transient Thermal Response
t, PULSE TIME (sec)
0.010.001 0.10.00010.000010.000001
0.01
0.1
1
10
R(t), TYPICAL TRANSIENT THER-
MAL RESISTANCE (°C/W)
1 10 100 1000
Single Pulse
20%
50%
10%
5%
2%
1%
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
NTSV20H120CT
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5
PACKAGE DIMENSIONS
TO220
CASE 221A09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.415 9.66 10.53
C0.160 0.190 4.07 4.83
D0.025 0.038 0.64 0.96
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.024 0.36 0.61
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
T
C
S
T
U
R
J
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
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Phone: 421 33 790 2910
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Phone: 81358171050
NTSV20H120CT/D
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