MMBT2907ALT1 - Avic Electronics Corp.

1.9

0.950.951.0

2. 4

1. 3

0.4

2.9

SOT-23 Plastic-Encapsulate Transistors

MMBT2907ALT1 TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM: 0.3 W (Tamb=25℃)

Collector current

ICM: -0.6 A

Collector-base voltage

V(BR)CBO: -60 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic= -10µA , IE=0 -60 V

Collector-emitter breakdown voltage V(BR)CEO I

C= -10 mA , IB=0 -60 V

E mitter-base break down vol t age V(BR)EBO I

E= -10µA, I C=0 -5 V

Collector cut-off current ICBO V

CB= -50V, IE=0 -0.1 µA

Collector cut-off current ICEO V

CB= -3V, IB=0 -0.1 µA

Emitter cu t-off cu rren t IEBO V

EB= -3V, IC=0 -0.1 µA

hFE(1) V

CE=-10V, IC= -150 mA 100 300

DC current gain hFE(2) V

CE=-10V, IC= -1 mA 50

Collector-emitter saturation voltage VCE(sat) I

C=-5 00mA, IB= -5 0 mA -1 V

Base-emitter satu ration voltage VBE(sat) I

C= -500mA , IB=-50 mA -2 V

Trans ition frequency fT VCE=-20V, IC= -50mA

f = 100MHz 200 MHz

DEVICE MARKING:

MMBT2907ALT1 =2F

Unit: mm

SOT-23

1. BASE

2. E MITTER

3. COLLECTOR

@vic

MMBT2907ALT1