Philips Semiconductors Product specification a NPN 8 GHz wideband transistor BFQ67T FEATURES DESCRIPTION High power gain NPN transistor in a plastic SOT416 Low noise figure (SC-75) package. Fs e High transition frequency Lt e Gold metallization ensures PINNING excellent reliability PIN DESCRIPTION * SOT416 (SC-75) envelope. 7 Tpasa 1B Top view MBKog0 2 emitter APPLICATIONS 3 collector Wideband applications such as Marking code: V2. satellite TV tuners and RF portable communications equipment up to Fig.1 SOT416. 2 GHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Veso collector-base voltage open emitter - - 20 Vv VcEo collector-emitter voltage open base - - 10 V Ic collector current (DC) - - 50 mA Prot total power dissipation T, < 75 C; note 1 - - 150 mw hee DC current gain Io = 15 MA; Voge = 5 V; T; = 25 C | 60 100 - fr transition frequency lo = 15 MA; Vce = 8 V; f = 2 GHz; | - 8 - GHz Tamb = 25 C Gum maximum unilateral power gain le=15 MA; Vce=8 Vi f=1 GHz; | - 13 - dB Tamb = 25 C F noise figure lo=5 mA; Vce=8Vi f=1GHz |- 1.3 - dB Note 1. T, is the temperature at the soldering point of the collector pin. LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Veso collector-base voltage open emitter - 20 Vv VcEO collector-emitter voltage open base - 10 Vv VeBo emitter-base voltage open collector - 2.5 Vv lo collector current (DC) - 50 mA Prot total power dissipation Ts < 75 C; note 1 - 150 mw Tstg storage temperature -65 +150 C Tj junction temperature - 150 C Note 1. T, is the temperature at the soldering point of the collector pin. 2000 Mar 06 Mm 712082b 0289099 525 mmPhilips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Pith j-s thermal resistance from junction to soldering point 500 K/W CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT IcBo collector cut-off current le=0; Vegp=5V - - 50 nA hee DC current gain Ilo= 15 MA; VceE=5V 60 100 - Cy collector capacitance le =ig=0; Vop=8V;f=1MHz |- 0.7 - pF Ce emitter capacitance lc =i, = 0; Veg = 0.5 V; f= 1 MHz | - 1.3 - pF Cre feedback capacitance lo = 0; Vee = 8 V3; f= 1 MHz - 0.5 - pF fr transition frequency Ico = 15 MA; Vce = 8 V; f= 2 GHz; | 8 - GHz Tamb = 25 C Gum maximum unilateral power gain Io = 15 MA; Voce = 8 V; Tamb = 25 C; note 1 f=1 GHz - 13 - dB f= 2 GHz - 8 - dB F noise figure Ts = Popti lc = 5 MA; Vee = 8 V; f=1 GHz - 1.3 ~ dB f = 2 GHz - 2.2 - dB Ts = Popts Ic = 15 mA; Vee = 8 V; f=1 GHz - 2 - dB f= 2 GHz - 2.7 - dB Vce = 8 V; f= 2 GHz; Z, = 60 Q; Ilc=5mA - 2.5 - dB Ic=15mA - 3 ~ dB Note [Sail 1. Gumis the maximum unilateral power gain, assuming S19 is zero and Gum = 10 log > C1 |S 44/1 ~ | So0*) 2000 Mar 06 3 @@ 7110826 0189100 070 aPhilips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T MGU066 66307 200 120 Prot (mW) hee 4150 80 100 40 50 0 0 0 50 100 150 200 ) 20 40 60 Ts (C) Iq (mA) Voce = SV; 7) =25 C. Fig.3 DC current gain as a function of collector Fig.2 Power derating curve. current. 08 MAcas9 10 MBB303 Cre 'T (pF) (GHz) 0.6 0.4 0.2 0 Ig (MA) Io = 0; f = 1 MHz Voge = 8 Vif =2 GHz; Tap = 25 C. Fig.4 Feedback capacitance as a function of collector-base voltage. Fig. Transition frequency as a function of collector current. 2000 Mar 06 M@@ 711082b 0185101 TO? aPhilips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T In Figs 6 to 9, Guw = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. MRCGd2 20 gain (dB) 15 10 o 5 10 15 20 25 30 35 Ig (mA) Voge = 8 Vif = 1 GHz: Tam = 25 C. Fig.6 Gain as a function of collector current. MRCo40 0 to? 1071 1 4 (GHz) 10 lo = 5 MA; Voge = 8 V: Tamb = 25 C. Fig.7 Gain as a function of frequency. MACO4 50 gain (dB) 40 30 20 0 10% 101 1 4 (eH (10 lo = 15 mA; Voge = 8 V; Tamb = 25 C. Fig.8 Gain as a function of frequency. MRCO43 50 gain (cB) 30 20 10 0 10-2 to-1 f (GHz) le = 30 mA; Vee = 8 V; Tamp = 25 C. Fig.9 Gain as a function of frequency. 2000 Mar 06 me 71108eb 0189102 343Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T 4 MAC044 F (dB) ig (mA) Voce =8 Vi t=1 GHz. Fig.10 Minimum noise figure as a function of collector current. + 0.8 + 0.6 + 0.4 + 0.2 Io = 5 MA; Voge = 8 V; f=1 GHz Z,=500. Fig.11 Noise circle. 2000 Mar 06 6 @@ 7110826 0149103 SaT mePhilips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T MACO47 +10 Io = 15 MA; Vee = 8 V; Zp = 50 0. Fig.12 Common emitter input reflection coefficient (S41). lo= 15 mA; Voe= 8Bv. Fig.13 Common emitter forward transmission coefficient (S21). 2000 Mar 06 I WS 7110826 0189104 7bPhilips Semiconductors NPN 8 GHz wideband transistor Product specification BFQ67T 135 go 180 F& 0 135 lo = 15 mA; Vee = 8 V. 45 MACO49 Fig.14 Common emitter reverse transmission coefficient (S12). lo = 15 MA; Veg = BV; 2, = 50 2. 7 1.0 { 0.8 toe + 0.4 7 0.2 + 1.0 Fig.15 Common emitter output reflection coefficient (S22). 2000 Mar 06 (~@@ 7110626 0189105 b52 aPhilips Semiconductors NPN 8 GHz wideband transistor Product specification BFQ67T PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT416 -f--4--+ 3 a t : Q ie a __ 4 1 A Ay 4 t | 4 lp 0.5 imm beer tii ii J scale DIMENSIONS (mm are the original dimensions) A At UNIT max| P| D E eo, | He | by | @ v w 0.95 0.30 | 025 | 1.8 | 09 1.75 | 0.45 | 0,23 mm |) oe | ' }o15 | o10 | 14 | 07 %S 1445 | 015 | 013 | 7 | OUTLINE REFERENCES EUROPEAN VERSION IEC JEDEC EIAJ PROJECTION | 'SSUE DATE soTat6 SC-75 a 97-02-28 2000 Mar 06 9 me 7110826 0189106 559 a