IGBT - Field Stop 600 V, 60 A FGH60N60SMD Description Using novel field stop IGBT technology, ON Semiconductor's new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features * * * * * * * * Maximum Junction Temperature: TJ = 175C Positive Temperature Co-efficient for easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 60 A High Input Impedance Fast Switching: EOFF = 7.5 uJ/A Tightened Parameter Distribution This Device is Pb-Free and is RoHS Compliant www.onsemi.com VCES IC 600 V 60 A C G E E Applications C * Solar Inverter, UPS, Welder, PFC, Telecom, ESS G COLLECTOR (FLANGE) TO-247-3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH60N60 SMD $Y &Z &3 &K FGH60N60SMD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2010 January, 2020 - Rev. 3 1 Publication Order Number: FGH60N60SMD/D FGH60N60SMD ABSOLUTE MAXIMUM RATINGS Symbol Ratings Unit VCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage 20 V Transient Gate to Emitter Voltage 30 V TC = 25C 120 A TC = 100C 60 A IC ICM (Note 1) IF IFM (Note 1) PD TJ TSTG TL Description Collector Current Pulsed Collector Current 180 A TC = 25C 60 A TC = 100C 30 A 180 A TC = 25C 600 W TC = 100C 300 W Operating Junction Temperature -55 to +175 C Storage Temperature Range -55 to +175 C 300 C Diode Forward Current Pulsed Diode Maximum Forward Current Maximum Power Dissipation Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol Parameter Typ. Max. Unit RqJC (IGBT) Thermal Resistance, Junction to Case - 0.25 _C/W RqJC (Diode) Thermal Resistance, Junction to Case - 1.1 _C/W Thermal Resistance, Junction to Ambient - 40 _C/W RqJA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Qty per Tube FGH60N60SMD FGH60N60SMD TO-247 Tube N/A N/A 30 www.onsemi.com 2 FGH60N60SMD ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit VGE = 0 V, IC = 250 mA 600 - - V VGE = 0 V, IC = 250 mA - 0.6 - V/C OFF CHARACTERISTICS BVCES Collector to Emitter Breakdown Voltage DBVCES / DTJ Temperature Coefficient of Breakdown Voltage ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 mA IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - 400 nA 3.5 4.5 6.0 V ON CHARACTERISTICS VGE(th) G-E Threshold Voltage IC = 250 mA, VCE = VGE VCE(sat) Collector to Emitter Saturation Voltage IC = 60 A, VGE = 15 V, - 1.9 2.5 V IC = 60 A, VGE = 15 V, TC = 175C - 2.1 - V VCE = 30 V, VGE = 0 V, f = 1 MHz - 2915 - pF - 270 - pF - 85 - pF - 18 27 ns - 47 70 ns Turn-Off Delay Time - 104 146 ns Fall Time - 50 68 ns Eon Turn-On Switching Loss - 1.26 1.94 mJ Eoff Turn-Off Switching Loss - 0.45 0.6 mJ Ets Total Switching Loss - 1.71 2.54 mJ Td(on) Turn-On Delay Time - 18 - ns DYNAMIC CHARACTERISTICS Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Td(on) Tr Td(off) Tf Tr Turn-On Delay Time Rise Time VCC = 400 V, IC = 60 A, RG = 3 W, VGE = 15 V, Inductive Load, TC = 175C - 41 - ns Turn-Off Delay Time - 115 - ns Fall Time - 48 - ns Eon Turn-On Switching Loss - 2.1 - mJ Eoff Turn-Off Switching Loss - 0.78 - mJ Ets Total Switching Loss - 2.88 - mJ Qg Total Gate Charge - 189 284 nC Qge Gate to Emitter Charge - 20 30 nC Qgc Gate to Collector Charge - 91 137 nC Td(off) Tf Rise Time VCC = 400 V, IC = 60 A, RG = 3 W, VGE = 15 V, Inductive Load, TC = 25C VCE = 400 V, IC = 60 A, VGE = 15 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH60N60SMD ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25C unless otherwise noted) Symbol VFM Erec Trr Qrr Parameter Diode Forward Voltage Reverse Recovery Energy Diode Reverse Recovery Time Test Conditions IF = 30 A IF = 30 A, diF/dt = 200 A/ms Diode Reverse Recovery Charge Min Typ Max Unit TC = 25C - 2.1 2.7 V TC = 175C - 1.7 - TC = 175C - 79 - uJ TC = 25C - 30 39 ns TC = 175C - 72 - TC = 25C - 44 62 TC = 175C - 238 - nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 FGH60N60SMD TYPICAL PERFORMANCE CHARACTERISTICS 180 20V 15V o Collector Current, IC (A) TC = 25 C 150 10V 120 90 60 VGE = 8V 10V 120 90 VGE = 8V 60 30 0 0 0 2 4 6 0 Collector-Emitter Voltage, VCE (V) 6 180 Common Emitter VGE = 15V 150 o TC = 25 C o TC = 175 C 120 90 60 30 0 1 Common Emitter VCE = 20V 150 Collector Current, IC (A) Collector Current, IC (A) 4 Figure 2. Typical Output Characteristics 180 2 3 4 o TC = 25 C o TC = 175 C 120 90 60 30 0 5 2 Collector-Emitter Voltage, VCE (V) 4 6 8 20 Collector-Emitter Voltage, VCE (V) Common Emitter VGE = 15V 120A 2.5 60A 2.0 IC = 30A 1.5 25 50 75 100 125 150 12 Figure 4. Transfer Characteristics 3.5 3.0 10 Gate-Emitter Voltage,VGE (V) Figure 3. Typical Saturation Voltage Characteristics Collector-Emitter Voltage, VCE (V) 2 Collector-Emitter Voltage, VCE (V) Figure 1. Typical Output Characteristics 1.0 12V 150 30 0 20V 15V o TC = 175 C 12V Collector Current, IC (A) 180 175 Common Emitter TC = -40 oC 16 12 8 60A 4 0 120A IC = 30A 4 8 12 16 20 Gate-Emitter Voltage, VGE (V) Case Temperature, TC (5C) Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 6. Saturation Voltage vs. VGE www.onsemi.com 5 FGH60N60SMD TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 20 Common Emitter Collector-Emitter Voltage, VCE (V) Collector-Emitter Voltage, VCE (V) 20 o T C = 25 C 16 12 8 60A 4 0 120A IC = 30A 4 8 12 16 Common Emitter o 12 8 60A 120A 4 IC = 30A 0 4 20 8 20 Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE 15 Gate-Emitter Voltage, VGE (V) Common Emitter VGE = 0V, f = 1MHz TC = 25oC 5000 4000 Cies 3000 2000 Coes 1000 Common Emitter TC = 25oC 12 VCC = 200V 300V 9 400V 6 3 Cres 0 0.1 1 10 0 30 0 40 80 Collector-Emitter Voltage, VCE (V) 120 160 200 Gate Charge, Qg(nC) Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics 300 100 10 ms 100 80 tr 100ms Switching Time (ns) 1ms 10 ms DC 10 1 *Notes: 0.1 60 40 td(on) Common Emitter VCC = 400V, V GE = 15V IC = 60A 20 1.TC = 25 5C o TC = 25 C 2.TJ = 175 5C o TC = 175 C 3. Single Pulse 0.01 16 Gate-Emitter Voltage, VGE(V) 6000 Collector Current, IC (A) 12 Gate-Emitter Voltage, VGE (V) 7000 Capacitance (pF) TC = 175 C 16 1 10 10 100 1000 0 Collector-Emitter Voltage, VCE (V) 10 20 30 40 Gate Resistance, RG (W) Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs. Gate Resistance www.onsemi.com 6 50 FGH60N60SMD TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 6000 Common Emitter VGE = 15V, RG = 3 W o TC = 25 C o o TC = 175 C td(off) 100 tf 10 0 10 20 30 40 o TC = 175 C 100 Switching Time (ns) TC = 25 C 1000 Switching Time (ns) 1000 Common Emitter VCC = 400V, VGE = 15V IC = 60A td(on) 10 1 50 0 Gate Resistance, RG (W) 30 60 5 Eon Switching Loss (mJ) td(off) 100 tf 10 Common Emitter VGE = 15V, RG = 3 W 1 Eoff Common Emitter VCC = 400V, V GE = 15V IC = 60A o o TC = 25 C TC = 25 C o o TC = 175 C TC = 175 C 0 30 60 90 0.1 120 0 Collector Current, IC (A) 30 40 50 300 100 Eon Collector Current, IC (A) Switching Loss (mJ) 20 Figure 16. Switching Loss vs. Gate Resistance 10 1 Eoff 0.1 Common Emitter VGE = 15V, RG = 3 W o TC = 25 C o 10 Safe Operating Area o VGE = 15V, TC = 175 C TC = 175 C 0 10 Gate Resistance, RG (W) Figure 15. Turn-off Characteristics vs. Collector Current 0.01 120 Figure 14. Turn-on Characteristics vs. Collector Current 1000 1 90 Collector Current, IC (A) Figure 13. Turn-off Characteristics vs. Gate Resistance Switching Time (ns) tr 30 60 90 1 120 Collector Current, IC (A) 1 10 100 1000 Collector-Emitter Voltage, VCE (V) Figure 17. Switching Loss vs. Collector Current Figure 18. Turn Off Switching SOA Characteristics www.onsemi.com 7 FGH60N60SMD TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 130 180 Common Emitter VGE = 15V 110 100 Square Wave 160 Collector Current, IC (A) Collector Current, IC (A) 120 90 80 70 60 50 40 30 o TJ < 175 C,D = 0.5,VCE = 400V VGE = 15/0V, RG = 3 W 140 120 100 o Tc = 75 C 80 o Tc = 100 C 60 40 20 20 10 25 50 75 100 125 150 o 0 1k 175 10k Case Temperature, TC (5C) Figure 20. Load Current vs. Frequency 200 10000 o TC = 175 C 100 1000 TC = 175 C Reverse Current, IR (mA) Forward Current, IF (A) o o TC = 125 C o 10 TC = 75 C o TC = 25 C o TC = 25 C o TC = 75 C ---- o TC = 125 C ---- 100 o TC = 125 C 10 o TC = 75 C 1 0.1 o TC = 25 C o TC = 175 C 1 0 1 2 3 0.01 4 0 100 Forward Voltage, VF (V) 200 300 400 500 600 Reverse Voltage, VR (V) Figure 21. Forward Characteristics Figure 22. Reverse Current 100 350 o o TC = 25 C o 300 TC = 175 C ---- Reverse Recovery Time, Trr (ns) Stored Recovery Charge, Qrr (nC) 1M Switching Frequency, f (Hz) Figure 19. Current Derating 250 200 150 100 diF/dt = 200A/ ms diF/dt = 100A/ ms 50 0 100k 0 10 20 30 40 50 o TC = 175 C ---- 80 70 60 diF/dt = 100A/ ms 50 diF/dt = 200A/ ms 40 30 20 60 TC = 25 C 90 Forward Current, IF (A) 0 10 20 30 40 50 Forward Current, IF (A) Figure 23. Stored Charge Figure 24. Reverse Recovery Time www.onsemi.com 8 60 FGH60N60SMD Thermal Response (Zthjc) 0.5 0.1 0.5 0.2 0.1 0.05 0.02 0.01 0.01 single pulse PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration (sec) Figure 25. Transient Thermal Impedance of IGBT Thermal Response (Zthjc) 5 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.01 0.1 1E-3 1E-5 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-4 1E-3 0.01 0.1 Rectangular Pulse Duration (sec) Figure 26. Transient Thermal Impedance of Diode www.onsemi.com 9 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-247-3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot "G", may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO-247-3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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