© Semiconductor Components Industries, LLC, 2010
January, 2020 − Rev. 3
1Publication Order Number:
FGH60N60SMD/D
IGBT - Field Stop
600 V, 60 A
FGH60N60SMD
Description
Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 2nd generation IGBTs offer the optimum
performance for solar inverter, UPS, welder, telecom, ESS and PFC
applications where low conduction and switching losses are essential.
Features
•Maximum Junction Temperature: TJ = 175°C
•Positive Temperature Co−efficient for easy Parallel Operating
•High Current Capability
•Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 60 A
•High Input Impedance
•Fast Switching: EOFF = 7.5 uJ/A
•Tightened Parameter Distribution
•This Device is Pb−Free and is RoHS Compliant
Applications
•Solar Inverter, UPS, Welder, PFC, Telecom, ESS
TO−247−3LD
CASE 340CK
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
www.onsemi.com
VCES IC
600 V 60 A
MARKING DIAGRAM
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FGH60N60SMD = Specific Device Code
COLLECTOR
(FLANGE)
E
CG
$Y&Z&3&K
FGH60N60
SMD
E
C
G
FGH60N60SMD
www.onsemi.com
2
ABSOLUTE MAXIMUM RATINGS
Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 600 V
VGES Gate to Emitter Voltage ±20 V
Transient Gate to Emitter Voltage ±30 V
ICCollector Current TC = 25°C 120 A
TC = 100°C 60 A
ICM (Note 1) Pulsed Collector Current 180 A
IFDiode Forward Current TC = 25°C 60 A
TC = 100°C 30 A
IFM (Note 1) Pulsed Diode Maximum Forward Current 180 A
PDMaximum Power Dissipation TC = 25°C 600 W
TC = 100°C 300 W
TJOperating Junction Temperature −55 to +175 °C
TSTG Storage Temperature Range −55 to +175 °C
TLMaximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds 300 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Symbol Parameter Typ. Max. Unit
RqJC (IGBT) Thermal Resistance, Junction to Case −0.25 _C/W
RqJC (Diode) Thermal Resistance, Junction to Case −1.1 _C/W
RqJA Thermal Resistance, Junction to Ambient −40 _C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number Top Mark Package
Packing
Method Reel Size Tape Width
Qty per
Tube
FGH60N60SMD FGH60N60SMD TO−247 Tube N/A N/A 30
FGH60N60SMD
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
OFF CHARACTERISTICS
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 mA600 − − V
DBVCES / DTJTemperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 250 mA−0.6 −V/°C
ICES Collector Cut−Off Current VCE = VCES, VGE = 0 V − − 250 mA
IGES G−E Leakage Current VGE = VGES, VCE = 0 V − − ±400 nA
ON CHARACTERISTICS
VGE(th) G−E Threshold Voltage IC = 250 mA, VCE = VGE 3.5 4.5 6.0 V
VCE(sat) Collector to Emitter Saturation Voltage IC = 60 A, VGE = 15 V, −1.9 2.5 V
IC = 60 A, VGE = 15 V,
TC = 175°C−2.1 −V
DYNAMIC CHARACTERISTICS
Cies Input Capacitance VCE = 30 V, VGE = 0 V,
f = 1 MHz
−2915 −pF
Coes Output Capacitance −270 −pF
Cres Reverse Transfer Capacitance −85 −pF
SWITCHING CHARACTERISTICS
Td(on) Turn−On Delay Time VCC = 400 V, IC = 60 A,
RG = 3 W, VGE = 15 V,
Inductive Load, TC = 25°C
−18 27 ns
TrRise Time −47 70 ns
Td(off) Turn−Off Delay Time −104 146 ns
TfFall Time −50 68 ns
Eon Turn−On Switching Loss −1.26 1.94 mJ
Eoff Turn−Off Switching Loss −0.45 0.6 mJ
Ets Total Switching Loss −1.71 2.54 mJ
Td(on) Turn−On Delay Time VCC = 400 V, IC = 60 A,
RG = 3 W, VGE = 15 V,
Inductive Load, TC = 175°C
−18 −ns
TrRise Time −41 −ns
Td(off) Turn−Off Delay Time −115 −ns
TfFall Time −48 −ns
Eon Turn−On Switching Loss −2.1 −mJ
Eoff Turn−Off Switching Loss −0.78 −mJ
Ets Total Switching Loss −2.88 −mJ
QgTotal Gate Charge VCE = 400 V, IC = 60 A,
VGE = 15 V
−189 284 nC
Qge Gate to Emitter Charge −20 30 nC
Qgc Gate to Collector Charge −91 137 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
FGH60N60SMD
www.onsemi.com
4
ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min Typ Max Unit
VFM Diode Forward Voltage IF = 30 A TC = 25°C−2.1 2.7 V
TC = 175°C−1.7 −
Erec Reverse Recovery Energy IF = 30 A,
diF/dt = 200 A/ms
TC = 175°C−79 −uJ
Trr Diode Reverse Recovery Time TC = 25°C−30 39 ns
TC = 175°C−72 −
Qrr Diode Reverse Recovery Charge TC = 25°C−44 62 nC
TC = 175°C−238 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
FGH60N60SMD
www.onsemi.com
5
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation
Voltage Characteristics Figure 4. Transfer Characteristics
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level Figure 6. Saturation Voltage vs. VGE
Collector−Emitter Voltage, VCE (V)
Collector Current, IC (A)
Collector−Emitter Voltage, VCE (V)
Collector Current, IC (A)
Gate−Emitter Voltage,VGE (V)
Collector Current, IC (A)
Case Temperature, TC (5C)
Collector−Emitter Voltage, VCE (V)
Gate−Emitter Voltage, VGE (V)
Collector−Emitter Voltage, VCE (V)
Collector−Emitter Voltage, VCE (V)
Collector Current, IC (A)
4 8 12 16 20
0
30
60
90
120
150
180
VGE = 8V
20V
TC = 25oC15V 12V
10V
0246
0
30
60
90
120
150
180
VGE = 8V
20V
TC = 175oC15V 12V
10V
0246
0
30
60
90
120
150
180
Common Emitter
VGE = 15V
TC = 25oC
TC = 175oC
01 3425
24681012
0
30
60
90
120
150
180
Common Emitter
VCE = 20V
TC = 25oC
TC = 175 oC
1.0
1.5
2.0
2.5
3.0 120A
60A
IC = 30A
Common Emitter
VGE = 15V
3.5
50 75 125 150100 17525 0
4
8
12
16
20
IC = 30A
60A 120A
Common Emitter
TC = −40oC
FGH60N60SMD
www.onsemi.com
6
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics
Figure 11. SOA Characteristics Figure 12. Turn−on Characteristics
vs. Gate Resistance
Gate−Emitter Voltage, VGE (V)
Collector−Emitter Voltage, VCE (V)
Gate−Emitter Voltage, VGE(V)
Collector−Emitter Voltage, VCE (V)
Collector−Emitter Voltage, VCE (V)
Capacitance (pF)
Gate Charge, Qg(nC)
Gate−Emitter Voltage, VGE (V)
Collector Current, IC (A)
Gate Resistance, RG (W)
Switching Time (ns)
Collector−Emitter Voltage, VCE (V)
1 10 100 1000
4 8 12 16 20
4 8 12 16 20
0
4
8
12
16
20
IC = 30A
60A 120A
Common Emitter
TC = 25oC
0
4
8
12
16
20
120A
IC = 30A
60A
Common Emitter
TC = 175oC
0.1110
0
1000
2000
3000
4000
5000
6000
7000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25o
C
Cres
Coes
Cies
30 0 40 80 120 160 200
0
3
6
9
12
15
400V
Common Emitter
TC = 25o
C
300V
VCC = 200V
0.01
0.1
1
10
100
1ms
10 ms
DC
*Notes:
1.TC = 25 5C
2.TJ = 175 5C
3. Single Pulse
10
100
300
ms
ms
Common Emitter
VCC = 400V, V GE = 15V
IC = 60A
TC = 25oC
TC = 175oC
td(on)
tr
010 304020 50
10
20
40
60
80
100
FGH60N60SMD
www.onsemi.com
7
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Figure 13. Turn−off Characteristics
vs. Gate Resistance
Figure 14. Turn−on Characteristics
vs. Collector Current
Figure 15. Turn−off Characteristics vs.
Collector Current
Figure 16. Switching Loss vs.
Gate Resistance
Figure 17. Switching Loss vs. Collector Current Figure 18. Turn Off Switching SOA Characteristics
Switching Time (ns)
Gate Resistance, RG (W)
Switching Time (ns)
Collector Current, IC (A)
Switching Time (ns)
Collector Current, IC (A)
Switching Loss (mJ)
Gate Resistance, RG (W)
Switching Loss (mJ)
Collector Current, IC (A)
Collector Current, IC (A)
Collector−Emitter Voltage, VCE (V)
0 1020304050
10
100
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 175oC
td(off)
tf
6000
0 306090120
1
10
100
Common Emitter
VGE = 15V, RG = 3
TC = 25oC
TC = 175oC
td(off)
tf
1000
0 1020304050
0.1
1
5
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 175oC
Eon
Eoff
10
Common Emitter
VGE = 15V, RG = 3
TC = 25oC
TC = 175oC
Eon
Eoff
0306090120
0.01
0.1
1
1 10 100 1000
1
10
100
Safe Operating Area
VGE = 15V, TC = 175oC
300
Common Emitter
VGE = 15V, RG = 3
TC = 25oC
TC = 175oCtr
td(on)
0 306090120
1
10
100
1000
W
W
W
FGH60N60SMD
www.onsemi.com
8
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Figure 19. Current Derating Figure 20. Load Current vs. Frequency
Figure 21. Forward Characteristics Figure 22. Reverse Current
Collector Current, IC (A)
Case Temperature, TC (5C)
Collector Current, IC (A)
Switching Frequency, f (Hz)
Reverse Current, IR (mA)
Reverse Voltage, VR (V)
Forward Current, IF (A)
Forward Voltage, VF (V)
10
20
30
40
50
60
70
80
90
100
110
120 Common Emitter
VGE = 15V
o
130
25 50 75 100 125 150 175 1k 10k 100k 1M
0
20
40
60
80
100
120
140
160
180
Tc = 75oC
Square Wave
TJ < 175oC,D = 0.5,VCE = 400V
VGE = 15/0V, RG = 3
Tc = 100
oC
TC = 125oC
TC = 75oC
TC = 25oC
TC = 175oC
TC = 25 oC
TC = 75 oC−−−−
TC = 125 oC−−−−
TC = 175 oC
01234
1
10
100
200
0 100 200 300 400 500 600
0.01
0.1
1
10
100
1000
TC = 125oC
TC = 25oC
TC = 175oC
TC = 75oC
10000
Figure 23. Stored Charge Figure 24. Reverse Recovery Time
Reverse Recovery Time, Trr (ns)
Forward Current, IF (A)
Stored Recovery Charge, Qrr (nC)
Forward Current, IF (A)
0102030405060
0
50
100
150
200
250
300
TC = 25oC
TC = 175oC−−−−
diF/dt = 200A/ diF/dt = 100A/
350
diF/dt = 200A/
diF/dt = 100A/
100
TC = 25oC
TC = 175oC−−−−
0102030405060
20
30
40
50
60
70
80
90
ms
ms
ms
ms
W
FGH60N60SMD
www.onsemi.com
9
Thermal Response (Zthjc)
Rectangular Pulse Duration (sec)
Figure 25. Transient Thermal Impedance of IGBT
1E−51E−41E−3 0.01 0.1 1
1E−3
0.01
0.1
0.5
0.01
0.02
0.1
0.05
0.2
single pulse
Duty Factor, D = t1/t2
Peak T
j = Pdm x Zthjc + T
C
0.5
t1
PDM
t2
Figure 26. Transient Thermal Impedance of Diode
1E−51E−41E−3 0.01 0.1 1
1E−3
0.01
0.1
1
0.01
0.02
0.1
0.05
0.2
single pulse
Rectangular Pulse Duration (sec)
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.5
t1
PDM
t2
Thermal Response (Zthjc)
111
5
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
E
D
L1
E2
(3X) b
(2X) b2
b4
(2X) e
Q
L
0.25 MBAM
A
A1
A2
A
c
B
D1
P1
S
P
E1
D2
2
13
2
DIM MILLIMETERS
MIN NOM MAX
A 4.58 4.70 4.82
A1 2.20 2.40 2.60
A2 1.40 1.50 1.60
b 1.17 1.26 1.35
b2 1.53 1.65 1.77
b4 2.42 2.54 2.66
c 0.51 0.61 0.71
D 20.32 20.57 20.82
D1 13.08 ~ ~
D2 0.51 0.93 1.35
E 15.37 15.62 15.87
E1 12.81 ~ ~
E2 4.96 5.08 5.20
e ~ 5.56 ~
L 15.75 16.00 16.25
L1 3.69 3.81 3.93
P 3.51 3.58 3.65
P1 6.60 6.80 7.00
Q 5.34 5.46 5.58
S 5.34 5.46 5.58
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98AON13851G
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
TO−247−3LD SHORT LEAD
© Semiconductor Components Industries, LLC, 2018 www.onsemi.com
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
◊
