2N6344G - ON SEMICONDUCTOR

May, 2006 − Rev. 4 1Publication Order Number:

2N6344/D

2N6344

Preferred Device

Triacs

Silicon Bidirectional Thyristors

Designed primarily for full-wave ac control applications, such as

light dimmers, motor controls, heating controls and power supplies; or

wherever full−wave silicon gate controlled solid−state devices are

needed. Triac type thyristors switch from a blocking to a conducting

state for either polarity of applied main terminal voltage with positive

or negative gate triggering.

Features

•Blocking Voltage to 800 V

•All Diffused and Glass Passivated Junctions for Greater Parameter

Uniformity and Stability

•Small, Rugged, Thermowatt Construction for Low Thermal

Resistance, High Heat Dissipation and Durability

•Gate Triggering Guaranteed in all Four Quadrants

•For 400 Hz Operation, Consult Factory

•Pb−Free Package is Available*

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

†Peak Repetitive Off−State Voltage (Note 1)

(TJ = −40 to +110°C, Sine Wave

50 to 60 Hz, Gate Open) 2N6344

2N6349

VDRM,

VRRM 600

800

†On−State RMS Current (TC = +80°C) Full

Cycle Sine Wave 50 to 60 Hz (TC = +90°C) IT(RMS) 8.0

4.0 A

†Peak Non−Repetitive Surge Current (One

Full Cycle, Sine Wave 60 Hz, TC = +25°C)

Preceded and followed by rated current

ITSM 100 A

Circuit Fusing Consideration (t = 8.3 ms) I2t 40 A2s

†Peak Gate Power

(TC = +80°C, Pulse Width = 2 ms) PGM 20 W

†Average Gate Power

(TC = +80°C, t = 8.3 ms) PG(AV) 0.5 W

†Peak Gate Current

(TC = +80°C, Pulse Width = 2.0 ms) IGM 2.0 A

†Peak Gate Voltage

(TC = +80°C, Pulse Width = 2.0 ms) VGM 10 V

†Operating Junction Temperature Range TJ−40 to +125 °C

Storage Temperature Range Tstg −40 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

†Indicates JEDEC Registered Data.

1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TRIACS

8 AMPERES RMS

600 thru 800 VOLTS

TO−220AB

CASE 221A

STYLE 4

123

PIN ASSIGNMENT

3 Gate

Main Terminal 1

Main Terminal 2

4Main Terminal 2

MT1

MT2

Preferred devices are recommended choices for future use

and best overall value.

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2N6344G

AYWW

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

MARKING

DIAGRAM

Device Package Shipping

ORDERING INFORMATION

2N6344 TO−220AB 500 Units / Box

2N6344G TO−220AB

(Pb−Free) 500 Units / Box

2N6344

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THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

†Thermal Resistance, Junction−to−Case RqJC 2.2 °C/W

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Sec TL260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

†Peak Repetitive Blocking Current

(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C

TJ = 100°C

IDRM,

IRRM −

−−

−10

2.0 mA

ON CHARACTERISTICS

†Peak On−State Voltage

(ITM = "11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p2%) VTM − 1.3 1.55 V

Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 W)

Quadrant I: MT2(+), G(+) Both

Quadrant II: MT2(+), G(−) 2N6349 only

Quadrant III: MT2(−), G(−) Both

Quadrant IV: MT2(−), G(+) 2N6349 only

†MT2(+), G(+); MT2(−), G(−) TC = −40°C

†MT2(+), G(−); MT2(−), G(+) TC = −40°C

IGT −

−

100

125

Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 W)

Quadrant I: MT2(+), G(+) Both

Quadrant II: MT2(+), G(−) 2N6349 only

Quadrant III: MT2(−), G(−) Both

Quadrant IV: MT2(−), G(+) 2N6349 only

†MT2(+), G(+); MT2(−), G(−) TC = −40°C

†MT2(+), G(−); MT2(−), G(+) TC = −40°C

VGT −

−

0.9

1.1

1.4

−

2.0

2.5

2.0

2.5

3.0

Gate Non−Trigger Voltage (Continuous dc)

(VD = Rated VDRM, RL = 10 k W, TJ = 100°C)

†MT2(+), G(+); MT2(−), G(−); MT2(+), G(−); MT2(−), G(−)

VGD

0.2 − −

†Holding Current (VD = 12 Vdc, Gate Open) TC = 25°C

(Initiating Current = "200 mA) *TC = −40°CIH−

−6.0

−40

75 mA

†Turn-On Time

(VD = Rated VDRM, ITM = 11 A, IGT = 120 mA, Rise Time = 0.1 ms, Puls e Width = 2 ms) tgt − 1.5 2.0 ms

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Commutation Voltage

(VD = Rated VDRM, ITM = 11 A, Commutating di/dt = 4.0 A/ms, Gate Unenergized, TC = 8 0 °C) dv/dt(c) − 5.0 − V/ms

†Indicates JEDEC Registered Data.

2N6344

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+ Current

+ Voltage

VTM

Symbol Parameter

VDRM Peak Repetitive Forward Off State Voltage

IDRM Peak Forward Blocking Current

VRRM Peak Repetitive Reverse Off State Voltage

IRRM Peak Reverse Blocking Current

Voltage Current Characteristic of Triacs

(Bidirectional Device)

IDRM at VDRM

on state

off state

IRRM at VRRM

Quadrant 1

MainTerminal 2 +

Quadrant 3

MainTerminal 2 − VTM

VTM Maximum On State Voltage

IHHolding Current

MT1

(+) IGT

GATE

(+) MT2

REF

MT1

(−) IGT

GATE

(+) MT2

REF

MT1

(+) IGT

GATE

(−) MT2

REF

MT1

(−) IGT

GATE

(−) MT2

REF

−

MT2 NEGATIVE

(Negative Half Cycle)

MT2 POSITIVE

(Positive Half Cycle)

Quadrant III Quadrant IV

Quadrant II Quadrant I

Quadrant Definitions for a Triac

IGT −+ IGT

All polarities are referenced to MT1.

With in−phase signals (using standard AC lines) quadrants I and III are used.

2N6349

only

2N6349

only

Both

2N6344

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100

8.06.05.04.03.02.01.0

IT(RMS), RMS ON-STATE CURRENT, (AMP)

T , CASE TEMPERATURE ( C)°

α = CONDUCTION ANGLE

α = 30°

60°

90°

120°

180°

7.0

Figure 1. RMS Current Derating Figure 2. On−State Power Dissipation

QUADRANTS

QUADRANT 4

−60 20

−20 0 40 60 80 100 120 140

TJ, JUNCTION TEMPERATURE (°C)

0.4

−40

0.6

0.8

1.0

1.2

1.4

1.6

1.8 50

7.0

5.0 140120100806040200−20−40−60

TJ, JUNCTION TEMPERATURE (°C)

OFF-STATE VOLTAGE = 12 V

V , GATE TRIGGER VOLTAGE (VOLTS)

QUADRANT

I , GATE TRIGGER CURRENT (mA)

OFF-STATE VOLTAGE = 12 V

Figure 3. Typical Gate Trigger Voltage Figure 4. Typical Gate Trigger Current

2.0

IT(RMS), RMS ON-STATE CURRENT (AMP)

4.0

8.0

6.0

1.0 2.0 3.0 4.0 6.0 7.0 8.0

TJ [ 100°C60°

α = 180°

120°

90°

P , AVERAGE POWER (WATTS)

5.0

α = CONDUCTION ANGLE

30°

2N6344

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TJ = 100°C

f = 60 Hz

1.0

2.0 3.0 5.0 7.0 10

NUMBER OF CYCLES

CYCLE

100

TJ = 100°C

0.5

0.7

1.0

0.1

25°C

vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

−40

0.80.4 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4

0.2

0.3

−60 −20 200 40 10080 140

TJ, JUNCTION TEMPERATURE (°C)

12060

MAIN TERMINAL #2

POSITIVE

2.0

7.0

5.0

3.0

5.0

7.0

2.0

100

GATE OPEN

MAIN TERMINAL #1

POSITIVE

i , INSTANTANEOUS ON-STATE CURRENT (AMP)

ITSM I , HOLDING CURRENT (mA)

Surge is preceded and followed by rated current

, PEAK SURGE CURRENT (AMP)

Figure 5. On−State Characteristics

Figure 6. Typical Holding Current

Figure 7. Maximum Non−Repetitive

Surge Current

2.0 k 10 k20 5.0 k1.0 k500200100505.02.01.00.50.2

ZqJC(t) = r(t) • RqJC

0.02

0.05

0.2

0.1

0.5

1.0

t,TIME (ms)

0.1

0.01

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

Figure 8. Typical Thermal Response

2N6344

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PACKAGE DIMENSIONS

STYLE 4:

PIN 1. MAIN TERMINAL 1

2. MAIN TERMINAL 2

3. GATE

4. MAIN TERMINAL 2

TO−220AB

CASE 221A−07

ISSUE AA

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.014 0.022 0.36 0.55

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 −−− 1.15 −−−

Z−−− 0.080 −−− 2.04

123

−T− SEATING

PLANE

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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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2N6344/D

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