T1G6001528-Q3 - TriQuint Semiconductor

T1G6001528-Q3

DC – 6 GHz 18 W GaN RF Power Transistor

Preliminary Data Sheet: Rev - A 06/14/2011 - 1 of 15- Disclaimer: Sub

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Applications

• General Purpose RF Power

• Jammers

• Military and Civilian Radar

• Professional and Military radio systems

• Wideband amplifiers

• Test instrumentation

• Avionics

Product Features Functional Block Diagram

• Frequency: DC to 6 GHz

• Output Power (P3dB): 18 W at 6 GHz

• Linear Gain: >10 dB at 6 GHz

• Operating Voltage: 28 V

• Low thermal resistance package

General Description Pin Configuration

The TriQuint T1G6001528-Q3 is a 18 W (P3dB)

discrete GaN on SiC HEMT which operates from DC

to 6 GHz and typically provides >10 dB gain at 6 GHz.

The device is constructed with TriQuint’s proven 0.25

μm process, which features advanced field plate

techniques to optimize power and efficiency at high

drain bias operating conditions. This optimization can

potentially lower system costs in terms of fewer

amplifier line-ups and lower thermal management costs.

Lead-free and RoHS compliant

Evaluation Boards are available upon request.

Pin # Symbol

1 Vd/RF OUT

2 Vg/RF IN

Flange Source

Ordering Information

Part No. ECCN Description

T1G6001528-Q3 EAR99 Packaged Transistor

T1G6001528-Q3 EVB1 EAR99 5-6 GHz Eval Board

2

1

2

1

T1G6001528-Q3

DC – 6 GHz 18 W GaN RF Power Transistor

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Specifications

Absolute Maximum Ratings

Parameter Rating

Drain Voltage,Vd +40 V

Gate Voltage,Vg -50 to 0 V

Drain to Gate Voltage, Vd – Vg 80 V

Drain Current, Id 1.5 A

Gate Current, Ig -25 to 25 mA

Power Dissipation, Pdiss 26 W

RF Input Power, CW, T = 25ºC 37 dBm

Channel Temperature, Tch 250 oC

Mounting Temperature (30

Seconds)

260 oC

Storage Temperature -40 to 150 oC

Absolute maximum ratings at 3 GHz.

Operation of this device outside the parameter ranges given

above may cause permanent damage. These are stress

ratings only, and functional operation of the device at these

conditions is not implied.

Recommended Operating Conditions

Parameter Min Typical Max Units

Vd 28 30 V

Idq 50 mA

Id_drive (Under RF

Drive) 1400 mA

Vg -3.7 V

Channel

Temperature, Tch 200

oC

Electrical specifications are measured at specified test conditions.

Specifications are not guaranteed over all recommended operating

conditions.

Electrical Specifications

Test conditions unless otherwise noted: 25 ºC, Vd = 28 V, Idq = 50 mA, Vg = -3.7 V Typical.

RF Characteristics Symbol Min Typ Max Units

Load Pull Performance at 3 GHz (VDS=28V, IDQ= 50mA, CW)

Linear Gain GLIN 15.0 dB

Output Power at 3 dB Gain Compression P3dB 20.0 W

Drain Efficiency at 3 dB Gain Compression DE3dB 60 %

Power-Added Efficiency at 3 dB Gain Compression PAE3dB 56 %

Gain at 3 dB Compression G3dB 12.5 dB

Load Pull Performance at 6 GHz (VDS=28V, IDQ= 50mA, CW)

Linear Gain GLIN 11.5 dB

Output Power at 3 dB Gain Compression P3dB 19.0 W

Drain Efficiency at 3 dB Gain Compression DE3dB 60 %

Power-Added Efficiency at 3 dB Gain Compression PAE3dB 52 %

Gain at 3 dB Compression G3dB 8.5 dB

Performance at 5.4 GHz in the 5-6 GHz Fixture (VDS=28V, IDQ= 50mA, Pulse:100µs 20%)

Linear Gain GLIN 9.0 9.5 dB

Output Power at 3 dB Gain Compression P3dB 17.8 21.0 W

Drain Efficiency at 3 dB Gain Compression DE3dB 50 58 %

Power-Added Efficiency at 3 dB Gain Compression PAE3dB 40 45 %

Gain at 3 dB Compression G3dB 6.0 6.5 dB

Narrowband Performance at 3.5 GHz (VDS=28V, ID

Q

= 50mA, CW at P1dB, applied for 3.5 secs)

Impedance Mismatch Ruggedness VSWR 10:1

Note: VSWR testing performed with increasing real impedance value only from reference Z to 10 times reference Z.

T1G6001528-Q3

DC – 6 GHz 18 W GaN RF Power Transistor

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Specifications (cont.)

Thermal and Reliability Information

Parameter Condition Rating

Thermal Resistance, θJC, measured to back of package Tbase = 85 °C θJC = 5.0 °C/W

Channel Temperature (Tch), and Median Lifetime (Tm) Tbase = 85 °C, Vd = 28 V, Idq = 50

mA, Pdiss = 1.4 W

Tch = 92 °C

Tm = 2.4 E+10 Hours

Channel Temperature (Tch), and Median Lifetime (Tm)

Under RF Drive

Tbase = 85 °C, Vd = 28 V, Id = 1400

mA, Pout = 43.5 dBm, Pdiss = 21.8 W

Tch = 195 °C

Tm = 2.2 E+6 Hours

1E+04

1E+05

1E+06

1E+07

1E+08

1E+09

1E+10

1E+11

1E+12

1E+13

1E+14

1E+15

25 50 75 100 125 150 175 200 225 250 275

Median Lifetime, Tm (Hours)

Channel Temperature, Tch (°C)

Median Lifetime (Tm) vs. Channel Temperature (Tch)

FET7

0

20

40

60

80

100

120

140

160

180

200

1.00E-07 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01

Max Channel Temperature (°C)

Pulse Width (sec)

Max Channel Temperature

Tbase = 85 °C, Pdiss = 3 w/mm

5% duty cycle

25% duty cycle

50% duty cycle

T1G6001528-Q3

DC – 6 GHz 18 W GaN RF Power Transistor

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Load Pull Smith Chart

Load Pull Data

V

DS

= 28V, I

DQ

= 50mA

3.2 816 32 80

j3.2

-j3.2

0

∞

j8

-j8

0

∞

j16

-j16

0

∞

j32

-j32

0

∞

j80

-j80

0

∞

6000MHz

1000MHz

Z

L

eff

6000MHz

1000MHz

6000MHz

1000MHz

Z

L

cmp

Z

L

pow

1000MHz

T1G6001528-Q3

DC – 6 GHz 18 W GaN RF Power Transistor

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Load Pull Data

RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not

the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The

impedances listed follow an optimized trajectory to maintain high power and high efficiency (ZLcmp).

Test conditions: VDS=28V, IDQ= 50mA

Freq. [MHz] Real(ZS) Imag(ZS) Real(ZL) Imag(ZL) G3dB [dB] P3dB [dBm] P3dB [W] PAE @3dB[%]

1000 3.20 12.00 14.30 -1.20 19.5 42.5 17.8 55.4

1100 3.20 10.38 13.92 -1.26 19.2 42.6 18.0 55.8

1200 3.20 8.95 13.53 -1.31 18.9 42.6 18.2 56.1

1300 3.20 7.70 13.15 -1.37 18.5 42.7 18.5 56.2

1400 3.20 6.60 12.77 -1.42 18.2 42.7 18.7 56.3

1500 3.20 5.65 12.39 -1.48 17.9 42.8 18.9 56.3

1600 3.20 4.82 12.00 -1.53 17.6 42.8 19.1 56.2

1700 3.20 4.11 11.62 -1.59 17.3 42.9 19.3 56.1

1800 3.20 3.49 11.24 -1.64 16.9 42.9 19.6 55.9

1900 3.20 2.96 10.85 -1.70 16.6 43.0 19.8 55.6

2000 3.20 2.50 10.47 -1.75 16.3 43.0 20.0 55.4

2100 3.20 2.09 10.29 -2.27 15.9 43.0 20.1 55.2

2200 3.20 1.72 10.10 -2.79 15.5 43.0 20.2 54.9

2300 3.20 1.38 9.92 -3.31 15.2 43.1 20.3 54.7

2400 3.20 1.05 9.73 -3.83 14.8 43.1 20.4 54.5

2500 3.20 0.71 9.55 -4.35 14.4 43.1 20.5 54.3

2600 3.20 0.34 9.37 -4.86 14.0 43.1 20.5 54.2

2700 3.20 -0.05 9.18 -5.38 13.6 43.1 20.6 54.2

2800 3.20 -0.50 9.00 -5.90 13.3 43.2 20.7 54.3

2900 3.20 -1.01 8.81 -6.42 12.9 43.2 20.8 54.4

3000 3.20 -1.60 8.63 -6.94 12.5 43.2 20.9 54.7

3100 3.20 -2.28 8.68 -7.17 12.5 43.2 20.9 55.1

3200 3.20 -3.04 8.74 -7.39 12.4 43.2 21.0 55.6

3300 3.20 -3.86 8.79 -7.62 12.4 43.2 21.0 56.1

3400 3.20 -4.73 8.85 -7.85 12.3 43.2 21.1 56.7

3500 3.20 -5.63 8.90 -8.08 12.3 43.3 21.1 57.3

3600 3.20 -6.54 8.95 -8.30 12.2 43.3 21.1 57.9

3700 3.20 -7.45 9.01 -8.53 12.2 43.3 21.2 58.6

3800 3.20 -8.34 9.06 -8.76 12.1 43.3 21.2 59.1

3900 3.20 -9.20 9.12 -8.98 12.1 43.3 21.3 59.6

4000 3.20 -10.00 9.17 -9.21 12.0 43.3 21.3 60.0

4100 3.20 -10.74 9.20 -9.79 11.8 43.3 21.3 60.3

4200 3.20 -11.43 9.22 -10.38 11.6 43.3 21.2 60.5

4300 3.20 -12.06 9.25 -10.96 11.3 43.3 21.2 60.5

4400 3.20 -12.66 9.27 -11.54 11.1 43.3 21.1 60.5

4500 3.20 -13.23 9.30 -12.13 10.9 43.3 21.1 60.3

4600 3.20 -13.78 9.32 -12.71 10.7 43.2 21.1 60.1

4700 3.20 -14.33 9.35 -13.29 10.5 43.2 21.0 59.7

4800 3.20 -14.87 9.37 -13.87 10.2 43.2 21.0 59.3

4900 3.20 -15.43 9.40 -14.46 10.0 43.2 20.9 58.8

5000 3.20 -16.00 9.42 -15.04 9.8 43.2 20.9 58.2

5100 3.20 -16.60 9.84 -15.58 9.7 43.2 20.8 57.5

5200 3.20 -17.25 10.27 -16.12 9.6 43.2 20.7 56.8

5300 3.20 -17.94 10.69 -16.66 9.5 43.1 20.6 55.9

5400 3.20 -18.70 11.11 -17.20 9.4 43.1 20.5 55.0

5500 3.20 -19.52 11.54 -17.74 9.3 43.1 20.5 54.1

5600 3.20 -20.42 11.96 -18.27 9.1 43.1 20.4 53.0

5700 3.20 -21.41 12.38 -18.81 9.0 43.1 20.3 52.0

5800 3.20 -22.49 12.80 -19.35 8.9 43.0 20.2 50.8

5900 3.20 -23.69 13.23 -19.89 8.8 43.0 20.1 49.6

6000 3.20 -25.00 13.65 -20.43 8.7 43.0 20.0 48.4

T1G6001528-Q3

DC – 6 GHz 18 W GaN RF Power Transistor

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Typical Performance

S-Parameter Smith Chart

S-Parameters

VDS = 28V, IDQ = 50mA

2 5 10 20 50

j2

-j2

0

∞

j5

-j5

0

∞

j10

-j10

0

∞

j20

-j20

0

∞

j50

-j50

0

∞

S22

S11

6000MHz

100MHz

Small Signal Gain

Maximum Stable Gain of T1G6001528Q3

V

DS

=28V,I

DQ

=50mA

01000 2000 3000 4000 5000 6000

10

15

20

25

30

35

Freq. [MHz]

MSG [dB]

T1G6001528-Q3

DC – 6 GHz 18 W GaN RF Power Transistor

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Typical Performance (cont.)

Performance is measured at DUT reference plane

26 28 30 32 34 36 38 40 42 44

16

17

18

19

20

21

22

23

24

26 28 30 32 34 36 38 40 42 44

0

10

20

30

40

50

60

70

80

26 28 30 32 34 36 38 40 42 44

0

10

20

30

40

50

60

70

80

Pout [dBm]

Gain [dB]

Gain, DEff., and PAE vs. Pout

Freq.=1GHz, V

DS

=28V, I

DQ

=50mA; CW

DEff. & PAE [%]

Gain

DEff.

PAE

Z

S

= 6.95 + j12.03 Ω

Z

L

= 15.09 - j1.19 Ω

26 28 30 32 34 36 38 40 42 44

14

15

16

17

18

19

20

21

22

26 28 30 32 34 36 38 40 42 44

0

10

20

30

40

50

60

70

80

26 28 30 32 34 36 38 40 42 44

0

10

20

30

40

50

60

70

80

Pout [dBm]

Gain [dB]

Gain, DEff., and PAE vs. Pout

Freq.=2GHz, VDS=28V, IDQ=50mA; CW

DEff. & PAE [%]

Gain

DEff.

PAE

ZS = 3.17 + j2.69 Ω

ZL = 13.00 - j0.51 Ω

26 28 30 32 34 36 38 40 42 44

10

11

12

13

14

15

16

17

18

26 28 30 32 34 36 38 40 42 44

0

10

20

30

40

50

60

70

80

26 28 30 32 34 36 38 40 42 44

0

10

20

30

40

50

60

70

80

Pout [dBm]

Gain [dB]

Gain, DEff., and PAE vs. Pout

Freq.=3GHz, VDS=28V, IDQ=50mA; CW

DEff. & PAE [%]

Gain

DEff.

PAE

ZS = 2.85 - j1.71 Ω

ZL = 8.34 - j5.73 Ω

26 28 30 32 34 36 38 40 42 44

10

11

12

13

14

15

16

17

18

26 28 30 32 34 36 38 40 42 44

0

10

20

30

40

50

60

70

80

26 28 30 32 34 36 38 40 42 44

0

10

20

30

40

50

60

70

80

Pout [dBm]

Gain [dB]

Gain, DEff., and PAE vs. Pout

Freq.=4GHz, V

DS

=28V, I

DQ

=50mA; CW

DEff. & PAE [%]

Gain

DEff.

PAE

Z

S

= 3.38 - j9.21 Ω

Z

L

= 9.35 - j7.76 Ω

26 28 30 32 34 36 38 40 42 44

6

7

8

9

10

11

12

13

14

26 28 30 32 34 36 38 40 42 44

0

10

20

30

40

50

60

70

80

26 28 30 32 34 36 38 40 42 44

0

10

20

30

40

50

60

70

80

Pout [dBm]

Gain [dB]

Gain, DEff., and PAE vs. Pout

Freq.=5GHz, V

DS

=28V, I

DQ

=50mA; CW

DEff. & PAE [%]

Gain

DEff.

PAE

Z

S

= 5.18 - j16.49 Ω

Z

L

= 10.23 - j10.41 Ω

26 28 30 32 34 36 38 40 42 44

6

7

8

9

10

11

12

13

14

26 28 30 32 34 36 38 40 42 44

0

10

20

30

40

50

60

70

80

26 28 30 32 34 36 38 40 42 44

0

10

20

30

40

50

60

70

80

Pout [dBm]

Gain [dB]

Gain, DEff., and PAE vs. Pout

Freq.=6GHz, V

DS

=28V, I

DQ

=50mA; CW

DEff. & PAE [%]

Gain

DEff.

PAE

Z

S

= 4.24 - j16.89 Ω

Z

L

= 20.68 - j18.80 Ω

T1G6001528-Q3

DC – 6 GHz 18 W GaN RF Power Transistor

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Typical Performance (cont.)

Performance measured in TriQuint’s 5.0 GHz to 6.0 GHz Evaluation Board at 3 dB compression

-40 -20 020 40 60 80

58

58.5

59

59.5

60

60.5

61

61.5

62

Temperature (C)

DrainEff. (%)

Drain Efficiency vs.Temperature, 5400 MHz, 3dB Compression

V

DS

=28V, I

DQ

=50mA; Pulse: 100μs, 20%

-40 -20 020 40 60 80

5

5.5

6

6.5

7

7.5

8

8.5

9

Temperature (C)

Gain (dB)

Gain vs.Temperature, 5400 MHz, 3dB Compression

V

DS

=28V, I

DQ

=50mA; Pulse: 100μs, 20%

25

-40 -20 020 40 60 80

21

21.5

22

22.5

23

23.5

24

24.5

Temperature (C)

Power (W)

Power vs.Temperature, 5400 MHz, 3dB Compression

V

DS

=28V, I

DQ

=50mA; Pulse: 100μs, 20%

T1G6001528-Q3

DC – 6 GHz 18 W GaN RF Power Transistor

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Evaluation Board Performance: 5 to 6 GHz

55.2 5.4 5.6 5.8 6

45

48

51

54

57

60

63

66

69

Frequency (GHz)

EVB Test Data, V

DS

=28V, I

DQ

=50mA; Pulse: 100μs, 20%

DrainEff (%)

PAE (%)

55.2 5.4 5.6 5.8 6

15

16

17

18

19

20

21

22

23

Power [W]

Frequency [GHz]

EVB Test Data, V

DS

=28V, I

DQ

=50mA; Pulse: 100

μ

s, 20%

55.2 5.4 5.6 5.8 6

6

6.25

6.5

6.75

7

7.25

7.5

7.75

8

Gain

[

dB

]

Power (W)

Gain (dB)

T1G6001528-Q3

DC – 6 GHz 18 W GaN RF Power Transistor

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Application Circuit

Bias-up Procedure Bias-down Procedure

Vg set to -5.0V Turn off RF signal

Vd set to 28 V Turn off Vd and wait 1 second to allow drain capacitor

dissipation

Adjust Vg more positive until quiescent Id is 50 mA.

This will be ~ Vg = -3.7 V typical Turn off Vg

Apply RF signal

RF In

L5

Vd

L1

R1

C2

C3

Vg

RF Out

C7

C8

C4

C5

C6

C9

C10

C11

C1 C12

IMN OMN

T1G6001528-Q3

DC – 6 GHz 18 W GaN RF Power Transistor

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Pin Description

Pin Symbol Description

1 Vd/ RF OUT Drain voltage/ RF Output matched to 50 ohms; see Application Circuit on page

9 as an example.

2 Vg/RF IN Gate voltage/ RF Input matched to 50 ohms; see Application Circuit on page 9

as an example

3 Flange Source connected to ground; see Application Circuit on page 9 as an example.

TOP VIEW BOTTOM VIEW

1

2

3

1

2

The T1G6001528-Q3 will be marked with the “1528” designator and a lot code marked below the part designator. The “YY”

represents the last two digits of the year the part was manufactured, the “WW” is the work week, and the “XXXX” is an auto-

generated number.

T1G6001528-Q3

DC – 6 GHz 18 W GaN RF Power Transistor

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Applications Information

Evaluation Board Layout

Top RF layer is 0.020” thick Rogers RO3203, єr = 3.02.

The pad pattern shown has been developed and tested for optimized assembly at TriQuint

Semiconductor. The PCB land pattern has been developed to accommodate lead and

package tolerances. Since surface mount processes vary from company to company, careful

process development is recommended.

For further technical information, refer to the T1G6001528-Q3 Product Information page.

C7

L1

C6 C11

C5 C9 C10

C1 C12

C2

C3

C4

C8

R1

L2

Bill of Material

Ref Des Value Description Manufacturer Part Number

C1, C7, C12 15 pF Cap, 0402, 500 V, 5%, P90 ATC 100A150JW500XC

C2 22 pF Cap, 0603, 500 V, 5%, P90 ATC 100A220JW500XC

C3, C8 0.01 uF Cap, 1206, 100 V, 10%, X7R Kemet C1206C103K1RACTU

C4, C9 0.1 uF Cap, 1206, 100 V, 10%, X7R Kemet C1206C104K1RACTU

C5, C10 1.0 uF Cap, 1812, 100 V, 10%, X7R AVX 18121C105KAT2A

C6, C11 22 uF Cap, D, 35V, 10%, SMD Kemet T491D226K035AT

L1 5.4 nH Ind, 0906, 1.6A, 5%, SMD CoilCraft 0906-5JL

L2 9.85 nH Ind, 1606, 1.6A, 5%, SMD CoilCraft 1606-9JLB

R1 12.1Ohms Res, 1206, 0.1 W, 5%, SMD Vishay CRC120612R1FKEA

T1G6001528-Q3

DC – 6 GHz 18 W GaN RF Power Transistor

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Mechanical Information

Package Information and Dimensions

All dimensions are in millimeters.

This package is lead-free/RoHS-compliant. The package base is CuMo and the plating material on the leads is NiAu. It is

compatible with both lead-free (maximum 260 °C reflow temperature) and tin-lead (maximum 245 °C reflow temperature)

soldering processes.

.178

1.270

.686

5.080

.508

3.835

.127

.762 X 45.0° Chamfer

4.064

8.126

2.413+.000

-.203

T1G6001528-Q3

DC – 6 GHz 18 W GaN RF Power Transistor

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Product Compliance Information

ESD Information

ESD Rating: Class 1A

Value: ≥ 250 V

Test: Human Body Model (HBM)

Standard: JEDEC Standard JESD22-A114

Solderability

Compatible with the latest version of J-STD-020, Lead

free solder, 260° C

This part is compliant with EU 2002/95/EC RoHS

directive (Restrictions on the Use of Certain Hazardous

Substances in Electrical and Electronic Equipment).

This product also has the following attributes:

• Lead Free

• Halogen Free (Chlorine, Bromine)

• Antimony Free

• TBBP-A (C

15

H

12

Br

4

0

2

) Free

• PFOS Free

• SVHC Free

MSL Rating

Level 3 at +260 °C convection reflow

The part is rated Moisture Sensitivity Level 3 at 260°C per

JEDEC standard IPC/JEDEC J-STD-020.

ECCN

US Department of Commerce EAR99

Recommended Soldering Temperature Profile

®

T1G6001528-Q3

DC – 6 GHz 18 W GaN RF Power Transistor

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Contact Information

For the latest specifications, additional product information, worldwide sales and distribution locations, and information about

TriQuint:

Web: www.triquint.com Tel: +1.972.994.8465

Email: info-sales@tqs.com Fax: +1.972.994.8504

For technical questions and application information:

Email: info-products@tqs.com

Important Notice

The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained

herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint

assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained

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applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.