Feb.1999
FS70VSH-03 OUTLINE DRAWING Dimensions in mm
TO-220S
MITSUBISHI Nch POWER MOSFET
FS70VSH-03
HIGH-SPEED SWITCHING USE
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC conver ter, etc.
30
±10
70
280
70
70
280
70
–55 ~ +150
–55 ~ +150
1.2
VGS = 0V
VDS = 0V
L = 30µH
Typical value
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
V
A
A
A
A
A
W
°C
°C
g
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg—
Symbol
MAXIMUM RATINGS (Tc = 25°C)
Parameter Conditions Ratings Unit
10.5MAX.
1.3
1.5MAX.
qwe
r4.5
0
+0.3
–0
3.0
+0.3
–0.5
150.8
8.6 ± 0.3
9.8 ± 0.5 1.5MAX.
(1.5)
0.5
4.5
2.6 ± 0.4
B
q GATE
w DRAIN
e SOURCE
r DRAIN
wr
q
e
¡2.5V DRIVE
¡VDSS .................................................................................. 30V
¡rDS (ON) (MAX) ..............................................................14mΩ
¡ID ......................................................................................... 70A
¡Integrated Fast Recovery Diode (TYP.) ............. 70ns
Feb.1999
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
MITSUBISHI Nch POWER MOSFET
FS70VSH-03
HIGH-SPEED SWITCHING USE
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
30
—
—
0.6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.9
10
13
0.35
60
4000
800
420
50
250
350
350
1.0
—
70
—
±0.1
0.1
1.2
14
20
0.49
—
—
—
—
—
—
—
—
1.5
1.79
—
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol UnitParameter Test conditions Limits
Min. Typ. Max.
ID = 1mA, VGS = 0V
VGS = ±10V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 35A, VGS = 4V
ID = 35A, VGS = 2.5V
ID = 35A, VGS = 4V
ID = 35A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 15V, ID = 35A, VGS = 4V, RGEN = RGS = 50Ω
IS = 35A, VGS = 0V
Channel to case
IS = 35A, dis/dt = –50A/µs
0
20
40
60
80
100
0 20050 100 150
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
POWER DISSIPATION P
D
(W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
0
10
20
30
40
50
0 0.2 0.4 0.6 0.8 1.0
2V
3V
2.5V
1.5V
4V
V
GS
= 5V
T
C
= 25°C
Pulse Test
10
0
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
0
357 2 10
1
357 2 10
2
357
2
3
23
tw = 10ms
T
C
= 25°C
Single Pulse
100ms
10ms
100ms
1ms
DC
0
20
40
60
80
100
0 0.4 0.8 1.2 1.6 2.0
P
D
= 70W
V
GS
= 5V
T
C
= 25°C
Pulse Test
2.5V
2V
3V
4V
1.5V
PERFORMANCE CURVES
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS70VSH-03
HIGH-SPEED SWITCHING USE
0
4
8
12
16
20
10
0
10
1
23457 10
2
23457
V
GS
= 2.5V
T
C
= 25°C
Pulse Test
4V
0
20
40
60
80
100
0 1.0 2.0 3.0 4.0 5.0
T
C
= 25°C
V
DS
= 10V
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
0 1.0 2.0 3.0 4.0 5.0
I
D
= 100A
T
C
= 25°C
Pulse Test
70A
30A
10
2
3
5
7
10
3
2
3
5
7
10
4
2
3
2
5
7
10
0
210
1
357357 2 10
2
357 23
2
Ciss
Coss
Crss
Tch = 25°C
f = 1MH
Z
V
GS
= 0V
10
0
10
1
23457 10
2
23457
10
1
10
2
2
3
4
5
7
10
3
2
3
4
5
7
t
d(off)
t
d(on)
t
r
Tch = 25°C
V
DD
= 15V
V
GS
= 4V
R
GEN
= R
GS
= 50Ω
t
f
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT ID (A)
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (mΩ)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT ID (A)
FORWARD TRANSFER
ADMITTANCE yfs
(S)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT ID (A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
10
0
10
1
23457 10
2
23457
10
0
10
1
2
3
4
5
7
10
2
2
3
4
5
7
T
C
= 25°C
75°C
125°C
V
DS
= 10V
Pulse Test
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS70VSH-03
HIGH-SPEED SWITCHING USE
0
1
2
3
4
5
0 20406080100
V
DS
= 15V
20V
25V
Tch = 25°C
I
D
= 70A
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
SOURCE CURRENT I
S
(A)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
TRANSIENT THERMAL IMPEDANCE Z
th
(ch–c)
(°C/W)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
10
–1
10
0
2
3
4
5
7
10
1
2
3
4
5
7
–50 0 50 100 150
V
GS
= 4V
I
D
= 1/2I
D
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
–50 0 50 100 150
V
DS
= 10V
I
D
= 1mA
0.4
0.6
0.8
1.0
1.2
1.4
–50 0 50 100 150
V
GS
= 0V
I
D
= 1mA
0
25
50
75
100
0 0.4 0.8 1.2 1.6 2.0
V
GS
= 0V
Pulse Test
T
C
= 125°C
75°C
25°C
10
–2
10
–1
2
3
5
7
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
–4
23 57 23 57 23 57 23 57
10
0
23 57
10
1
23 57
10
2
10
–3
10
–2
10
–1
Single Pulse
0.5
0.2
0.1
0.05
0.02
0.01
D = 1.0
P
DM
tw
D
=
T
tw
T
