MICR UALITY SEMICONDUCTOR, INC. 30 Amp Center Tapped Schottky Rectifiers 150C MAX T, 20 Volt, 30 Volt and 40 Volt Varm .640 Volt V; at Iz = 15.0 Amps Very Fast Switching Speed Standard TO-3 Case LTR. INCHES MILLIMETERS CENTER TAP A 74-76 Dia. 18,80-19,30 j-a | COMPAON CATHODE B 323-342 8,20-8,69 7 AC ac c .40 Min. 10,16 B D .038-.043 Dia. -97-1,09 + E 1.180-1.194 29,97-30,33 c F .665-.675 16,89-17,15 G 426-.440 10,82-11,18 H -525R Max. 13,34 I .151~.161 Dia. 3,84-4,09 CASE POSITIVE MAXIMUM RATINGS, per diode (At T, = 25C unless otherwise noted) RATINGS SYMBOL VSK3020T VSK3030T VSK3040T UNITS DCG Blocking Voltage Vam Working Peak Reverse Voitage Veawm 20 30 40 Volts Peak Repetitive Reverse Voltage Vann RMS Reverse Voltage Vevaus) 14 21 28 Volts Average Rectified Forward Current (Fig. 5)** lo 30.0 Amps Ambient Temp. @ Rated Vam, Resa<4.5C/W* Ta 95 90 85 C Individual Junction Peak Surge Current (non-rep), 300s Pulse Width (Fig. 4) lrsm 500 Amps Peak Surge Current (non-rep), Ye Cycle, 60Hz (Fig. 4) lrsm 300 Amps Operating Junction Temperature T, 65 to + 150* C Storage Temperature Tst6 65 to + 150 C Thermal Resistance, Junction to Case** Rais 1.5 C/W *At one-half rated Var, Rea<4.5C/W **Both junctions ELECTRICAL CHARACTERISTICS, per diode (At T, = 25C unless otherwise noted) CHARACTERISTICS SYMBOL VSK3020T | VSK3030T I VSK3040T UNITS Maximum Instantaneous Forward Voltage Drop See Fig. 2 for Typical V- {e = 8.0 Amps Vv, 530 (- = 15.0 Amps F -640 Volts le = 45.0 Amps 1.04 Maximum Instantaneous Reverse Current at Rated Vay See Fig. 1 for Typical Ip Tc = 25C 10 mA Te = 100C 75 1335 8 In, INSTANTANEOUS REVERSE CURRENT (mA) xz = 2 0.1 TYPICAL REVERSE CURRENT 5 10 16 20 26 30 35 Va, INSTANTANEOUS REVERSE VOLTAGE (VOLTS) 40 FIGURE 1 8 = \, INSTANTANEOUS FORWARD CURRENT (AMPS) o ~ a o TYPICAL FORWARD VOLTAGE CAPACITANCE, (pF) 10 Vp. REVERSE VOLTAGE (VOLTS) 0 0.4 0.8 1.2 1.6 2.0 2. V,, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) FIGURE 2 CAPACITANCE vs REVERSE VOLTAGE j 100 FIGURE 3 134 VSK3020T VSK3030T TO VSK3040T PULSE WIDTH = 300usec To = CASE TEMP. MEASURED WITH SENSOR CENTERED ON BOTTOM OF CASE. CURVES OF FIGURES 1,2,3 AND 4 ARE BASED ON INDIVIDUAL JUNCTIONS. CURVES OF FIGURE 5 ARE BASED ON TOTAL PACKAGE. PULSE WIDTH = 300usec Ta = 25C VSK3020T ~e oor oe VSK3030T TOTS VSK3040T Ta = 25C TEST FREQ = 100 kHz The current flow in a Schottky barrier rectifier is due to majority carrier conduction and is not affected by reverse recovery transients due to stored charge and minority carrier injection as in conventional PN diodes. The Schottky barrier rectifier may be considered for pur- poses of circuit analysis, as an ideal diode in parallel witha variable capacitance equal in value to the junction capac- itance. See Figure 3.30 Amp Center Tapped Schottky Rectifiers SURGE CURRENT vs NO. OF CYCLES (NON-REP.) 1000 309 wee. PULSE wioTy 8. 3ms ( *C YCLE of 60H sin, le Wave } 100 lesm: PEAK SURGE CURRENT (AMPS) = o = 10 100 NUMBER OF CYCLES at 60 Hz FIGURE 4 REVERSE POWER DISSIPATION ay Oo Oe ftp eo eo 400" So wie wt 46%, e 3 00'S 4 NE oonre* i gues aN _ o @. PR, REVERSE POWER DISSIPATION (WATTS) S = 01 0 5 10 15 20 25 30 Va PEAK REVERSE VOLTAGE (VOLTS) FIGURE 5(A) 0 REVERSE POWER DISSIPATION (VSK3030T) 1 ne ato wee oF ZA Ss Oe cote y ee <6 4067 =K6 AG 46% 167, _ Qo z we a <6 <G a Pp, REVERSE POWER DISSIPATION (WATTS) 9 = o 10 15 20 25 30 Vam- PEAK REVERSE VOLTAGE (VOLTS) FIGURE 5(B) T, = 28C REVERSE POWER MULTIPLIES 1.32x FOR EACH 5C TEMP. INCREASE. USE THIS MULTIPLIER FOR INTERPOLATION BETWEEN CURVES SHOWN ON FIGURES 5(A), 5(B), 5(C). USE 75C CURVES FOR ALL CASE TEMP. BELOW 75C. 135FORWARD POWER DISSIPATION (VSK3020T, VSK3030T, VSK3040T) | f I SINE WAVE CAPACITIVE LOAD REVERSE POWER DISSIPATION (VSK3040T) = oO a So e roe eee MN 2 EE a Se GAG x AGT oe Nn a pre 2 ee nN oa = o a = 3 PEAK-TO-AVERAGE __/g CURVES BASED ON SYMMETRICAL BALANCED RATIO CIRCUIT. EQUAL CURRENT -4 i THRU EACH JUNCTION. 25 ZA | | Vga. PEAK REVERSE VOLTAGE (VOLTS) 0 5 10 15 20 25 30 ig, AVERAGE FORWARD CURRENT (AMPS) wo | Pa, REVERSE POWER DISSIPATION (WATTS) 2 Pe, FORWARD POWER DISSIPATION (WATTS) a o FIGURE 5(C) FIGURE 5(D) MAXIMUM ALLOWABLE POWER DISSIPATION vs CASE TEMPERATURE g 8 a yy o oy on This curve is based on the _ 4 assumption that the forward conduction period and reverse biss period are approximately equal. If the application is such that OC Reverse Bias is applied nearly 100% of the time, all temperature points should ba reduced 13C. 0 _| t 6 25 50 75 100 125 150 Tc. CASE TEMPERATURE (C) _ Q a MAXIMUM ALLOWABLE POWER DISSIPATION (WATTS) (USE SUM OF Pp AND Pr) FIGURE 5(E) Thermai Considerations: 1. Use the curves of Figure 5 to study the voltage/current/temperature param- 3. Slightly higher case temperatures can be tolerated when the reverse voltage is eters. To use the curves, add the reverse power dissipation from Figure 5 (A), lower than that shown in Figure 5 (E). to (to he forward p ower dissipation temperature. (0). Then go to Figure 4. We recommend that all designs be verified at an ambient temperature at least 10C higher than the maximum at which the equipment will ever have to 2. Thermal runaway is entirely possible on marginal designs due to the inherently operate. large reverse leakage of Schottky barrier rectifiers and the fact that reverse power multiplies about 1.32 times for each 5C of junction temperature increase. 136