Parameter Test Conditions Min. Typ. Max. Unit
V
V/°C
Ω
V
S( )
µA
nA
pF
nC
ns
A
V
ns
µC
°C/W
THERMAL CHARACTERISTICS
2N6845LCC4
IRFE9120
Document Number 5518
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
-100
-0.10
0.6
0.69
-2 -4
1.25 -25
-250
-100
100
380
170
45 16.3
4.7
9.0
60
100
50
70
-3.5
-14
-4.8
200
3.1
Negligible
9.1
26
VGS = 0 ID= -1mA
Reference to 25°C
ID= -1mA
VGS = -10V ID= -2.2A
VGS = -10V ID= -3.5A
VDS = VGS ID= -250µA
VDS ≥-15V IDS = -2.2A
VGS = 0 VDS = -80V
TJ= 125°C
VGS = -20V
VGS = 20V
VGS = 0
VDS = -25V
f = 1MHz
VGS = -10V
ID= -3.5A
VDS = -50V
VDD = -50V
ID= -3.5A
RG= 7.5Ω
IS= -3.5A TJ= 25°C
VGS = 0
IF= -3.5A TJ= 25°C
di/ dt≤-100A/µsVDD ≤-50V
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance 1
Gate Threshold Voltage
Forward Transconductance 1
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current 2
Diode Forward Voltage 1
Reverse Recovery Time
Reverse Recovery Charge 1
Forward Turn–On Time
BVDSS
∆BVDSS
∆TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
IGSS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
ton
RθJC
RθJPC
STATIC ELECTRICAL RATINGS
Notes
1) Pulse Test: Pulse Width ≤300ms, δ≤2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Thermal Resistance Junction – Case
Thermal Resistance Junction – PC Board
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
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