IKQ40N120CH3 HighspeedswitchingseriesthirdgenerationIGBT LowswitchinglossesIGBTinHighspeed3technologycopackedwithsoft,fast recoveryfullcurrentratedanti-parallelEmitterControlleddiode Features: C HighspeedH3technologyoffers: *Highefficiencyinhardswitchingandresonanttopologies *10secshortcircuitwithstandtimeatTvj=175C *Easyparallelingcapabilityduetopositivetemperature coefficientinVCEsat *LowEMI *LowGateChargeQG *Verysoft,fastrecoveryfullcurrentanti-paralleldiode *MaximumjunctiontemperatureTvjmax=175C *Pb-freeleadplating;RoHScompliant *CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: *IndustrialUPS *Charger *EnergyStorage *Three-levelSolarStringInverter *Welding ProductValidation: Qualifiedforindustrialapplicationsaccordingtotherelevanttests ofJEDEC47/20/22 KeyPerformanceandPackageParameters Type IKQ40N120CH3 Datasheet www.infineon.com VCE IC VCEsat,Tvj=25C Tvjmax Marking Package 1200V 40A 2V 175C K40MCH3 PG-TO247-3-46 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.2 2017-06-09 IKQ40N120CH3 HighspeedswitchingseriesthirdgenerationIGBT TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Datasheet 2 V2.2 2017-06-09 IKQ40N120CH3 HighspeedswitchingseriesthirdgenerationIGBT MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj25C VCE 1200 V DCcollectorcurrent,limitedbyTvjmax TC=25Cvaluelimitedbybondwire TC=134C IC 80.0 40.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 160.0 A Turn off safe operating area VCE1200V,Tvj175C,tp=1s - 160.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25Cvaluelimitedbybondwire TC=100C IF 80.0 40.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 160.0 A Gate-emitter voltage TransientGate-emittervoltage(tp10s,D<0.010) VGE 20 30 V Short circuit withstand time VGE=15.0V,VCC600V Allowed number of short circuits < 1000 Time between short circuits: 1.0s Tvj=175C tSC PowerdissipationTC=25C PowerdissipationTC=134C Ptot 500.0 136.0 W Operating junction temperature Tvj -40...+175 C Storage temperature Tstg -55...+150 C s 10 Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s C 260 ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance, junction - case Rth(j-C) - - 0.30 K/W Diode thermal resistance, junction - case Rth(j-C) - - 0.50 K/W Thermal resistance junction - ambient Rth(j-a) - - 40 K/W Datasheet 3 V2.2 2017-06-09 IKQ40N120CH3 HighspeedswitchingseriesthirdgenerationIGBT ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 1200 - - V VGE=15.0V,IC=40.0A Tvj=25C Tvj=175C - 2.00 2.50 2.35 - V - 1.90 1.85 2.30 - V StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=40.0A Tvj=25C Tvj=175C Gate-emitter threshold voltage VGE(th) IC=1.00mA,VCE=VGE 5.1 5.8 6.5 V Zero gate voltage collector current ICES VCE=1200V,VGE=0V Tvj=25C Tvj=175C - 3000 250 - A Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=40.0A - 14.0 - S ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 2385 - - 235 - - 132 - - 190.0 - nC - 13.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=960V,IC=40.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 30 - ns - 46 - ns - 300 - ns - 31 - ns - 3.30 - mJ - 1.30 - mJ - 4.60 - mJ IGBTCharacteristic,atTvj=25C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Datasheet Tvj=25C, VCC=600V,IC=40.0A, VGE=0.0/15.0V, RG(on)=12.0,RG(off)=12.0, L=90nH,C=67pF L,CfromFig.E Energy losses include "tail" and diode reverse recovery. 4 V2.2 2017-06-09 IKQ40N120CH3 HighspeedswitchingseriesthirdgenerationIGBT DiodeCharacteristic,atTvj=25C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25C, VR=600V, IF=40.0A, diF/dt=600A/s dirr/dt - 340 - ns - 3.60 - C - 19.0 - A - -134 - A/s SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 30 - ns - 46 - ns - 375 - ns - 69 - ns - 4.50 - mJ - 2.50 - mJ - 7.00 - mJ - 500 - ns - 7.10 - C - 27.0 - A - -97 - A/s IGBTCharacteristic,atTvj=175C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=175C, VCC=600V,IC=40.0A, VGE=0.0/15.0V, RG(on)=12.0,RG(off)=12.0, L=90nH,C=67pF L,CfromFig.E Energy losses include "tail" and diode reverse recovery. DiodeCharacteristic,atTvj=175C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Datasheet Tvj=175C, VR=600V, IF=40.0A, diF/dt=600A/s dirr/dt 5 V2.2 2017-06-09 IKQ40N120CH3 HighspeedswitchingseriesthirdgenerationIGBT 550 500 100 450 400 Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] not for linear use 10 1 350 300 250 200 150 100 50 0.1 1 10 100 0 1000 25 VCE,COLLECTOR-EMITTERVOLTAGE[V] 50 75 100 125 150 175 TC,CASETEMPERATURE[C] Figure 1. Forwardbiassafeoperatingarea (D=0,TC=25C,Tvj175C;VGE=15V) Figure 2. Powerdissipationasafunctionofcase temperature (Tvj175C) 80 160 VGE=20V 70 17V 140 60 120 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 15V 50 40 30 20 11V 100 9V 7V 80 5V 60 40 10 0 13V 20 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[C] Figure 3. Collectorcurrentasafunctionofcase temperature (VGE15V,Tvj175C) Datasheet 0 1 2 3 4 5 6 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 4. Typicaloutputcharacteristic (Tvj=25C) 6 V2.2 2017-06-09 IKQ40N120CH3 HighspeedswitchingseriesthirdgenerationIGBT 160 160 VGE=20V Tvj = 25C Tvj = 175C 17V 140 140 120 13V 11V 100 9V 7V 80 120 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 15V 5V 60 40 100 80 60 40 20 0 20 0 1 2 3 4 5 0 6 2 VCE,COLLECTOR-EMITTERVOLTAGE[V] 6 8 10 12 14 16 18 VGE,GATE-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=175C) Figure 6. Typicaltransfercharacteristic (VCE=20V) 5.0 1000 IC = 20A IC = 40A IC = 80A 4.5 td(off) tf td(on) tr 4.0 3.5 t,SWITCHINGTIMES[ns] VCEsat,COLLECTOR-EMITTERSATURATION[V] 4 3.0 2.5 2.0 1.5 100 10 1.0 0.5 0.0 25 50 75 100 125 150 1 175 Tvj,JUNCTIONTEMPERATURE[C] 0 10 20 30 40 50 60 70 Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof afunctionofjunctiontemperature collectorcurrent (VGE=15V) (inductiveload,Tvj=175C,VCE=600V, VGE=0/15V,RG=12,Dynamictestcircuitin Figure E) Datasheet 80 IC,COLLECTORCURRENT[A] 7 V2.2 2017-06-09 IKQ40N120CH3 HighspeedswitchingseriesthirdgenerationIGBT td(off) tf td(on) tr 100 10 1 0 5 td(off) tf td(on) tr 1000 t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 1000 10 15 20 25 30 35 100 10 1 40 25 RG,GATERESISTOR[] Figure 9. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=175C,VCE=600V, VGE=0/15V,IC=40A,Dynamictestcircuitin Figure E) 100 125 150 175 20.0 typ. min. max. 7 Eoff Eon Ets 17.5 E,SWITCHINGENERGYLOSSES[mJ] VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] 75 Figure 10. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=600V,VGE=0/15V, IC=40A,RG=12,Dynamictestcircuitin Figure E) 8 6 5 4 3 15.0 12.5 10.0 7.5 5.0 2 1 50 Tvj,JUNCTIONTEMPERATURE[C] 2.5 25 50 75 100 125 150 0.0 175 Tvj,JUNCTIONTEMPERATURE[C] Figure 11. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=1mA) Datasheet 0 10 20 30 40 50 60 70 80 IC,COLLECTORCURRENT[A] Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=175C,VCE=600V, VGE=0/15V,RG=12,Dynamictestcircuitin Figure E) 8 V2.2 2017-06-09 IKQ40N120CH3 HighspeedswitchingseriesthirdgenerationIGBT 10 8 Eoff Eon Ets 8 7 6 5 4 3 2 6 5 4 3 2 1 1 0 Eoff Eon Ets 7 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 9 0 5 10 15 20 25 30 35 0 40 25 RG,GATERESISTOR[] Figure 13. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=175C,VCE=600V, VGE=0/15V,IC=40A,Dynamictestcircuitin Figure E) 100 125 150 175 16 VCC=240V VCC=960V Eoff Eon Ets 14 8 VGE,GATE-EMITTERVOLTAGE[V] E,SWITCHINGENERGYLOSSES[mJ] 75 Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=600V,VGE=0/15V, IC=40A,RG=12,Dynamictestcircuitin Figure E) 10 9 50 Tvj,JUNCTIONTEMPERATURE[C] 7 6 5 4 3 12 10 8 6 4 2 2 1 0 400 450 500 550 600 650 700 750 0 800 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=175C,VGE=0/15V, IC=40A,RG=12,Dynamictestcircuitin Figure E) Datasheet 0 30 60 90 120 150 180 210 QGE,GATECHARGE[nC] Figure 16. Typicalgatecharge (IC=40A) 9 V2.2 2017-06-09 IKQ40N120CH3 HighspeedswitchingseriesthirdgenerationIGBT 1E+4 300 IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] C,CAPACITANCE[pF] Cies Coes Cres 1000 100 10 0 5 10 15 20 25 270 240 210 180 150 120 90 60 30 0 30 10 VCE,COLLECTOR-EMITTERVOLTAGE[V] 11 12 13 14 15 16 17 18 VGE,GATE-EMITTERVOLTAGE[V] Figure 17. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) Figure 18. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE600V,Tvj175C) 45 D = 0.5 Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W] tSC,SHORTCIRCUITWITHSTANDTIME[s] 40 35 30 25 20 15 10 5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 0.001 i: 1 2 3 4 5 ri[K/W]: 0.016055 0.117494 0.15756 3.3E-3 3.4E-4 i[s]: 4.1E-4 2.8E-3 0.018313 0.491884 12.38553 0 10 12 14 16 18 20 1E-4 1E-6 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE600V,startatTvj175C) Datasheet 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 20. IGBTtransientthermalresistance (D=tp/T) 10 V2.2 2017-06-09 IKQ40N120CH3 HighspeedswitchingseriesthirdgenerationIGBT 1000 Tvj = 25C, IF = 40A Tvj = 175C, IF = 40A 0.2 900 0.1 0.1 0.05 trr,REVERSERECOVERYTIME[ns] Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W] D = 0.5 0.02 0.01 single pulse 0.01 0.001 800 700 600 500 400 300 i: 1 2 3 4 5 ri[K/W]: 0.02668 0.22581 0.24167 5.3E-3 3.9E-4 i[s]: 3.3E-4 2.7E-3 0.01549 0.40258 11.77304 1E-4 1E-6 1E-5 1E-4 0.001 0.01 0.1 200 200 1 tp,PULSEWIDTH[s] 300 400 500 600 700 800 diF/dt,DIODECURRENTSLOPE[A/s] Figure 21. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) Figure 22. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=600V) 8 35 Tvj = 25C, IF = 40A Tvj = 175C, IF = 40A 30 Tvj = 25C, IF = 40A Tvj = 175C, IF = 40A Irr,REVERSERECOVERYCURRENT[A] Qrr,REVERSERECOVERYCHARGE[C] 7 6 5 4 3 2 20 15 10 5 1 0 200 25 300 400 500 600 700 0 200 800 300 400 500 600 700 diF/dt,DIODECURRENTSLOPE[A/s] diF/dt,DIODECURRENTSLOPE[A/s] Figure 23. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=600V) Figure 24. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=600V) Datasheet 11 800 V2.2 2017-06-09 IKQ40N120CH3 HighspeedswitchingseriesthirdgenerationIGBT 0 160 Tvj = 25C Tvj = 175C -25 140 -50 120 IF,FORWARDCURRENT[A] dIrr/dt,diodepeakrateoffallofIrr[A/s] Tvj = 25C, IF = 40A Tvj = 175C, IF = 40A -75 -100 -125 100 80 60 -150 40 -175 20 -200 200 300 400 500 600 700 0 800 diF/dt,DIODECURRENTSLOPE[A/s] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VF,FORWARDVOLTAGE[V] Figure 25. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=600V) Figure 26. Typicaldiodeforwardcurrentasafunction offorwardvoltage 3.00 IF = 20A IF = 40A IF = 80A 2.75 VF,FORWARDVOLTAGE[V] 2.50 2.25 2.00 1.75 1.50 1.25 1.00 0.75 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[C] Figure 27. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Datasheet 12 V2.2 2017-06-09 IKQ40N120CH3 HighspeedswitchingseriesthirdgenerationIGBT Package Drawing PG-TO247-3-46 DIM A A1 A2 b b1 b2 MIN 4.90 2.31 1.90 1.16 1.96 1.96 MILLIMETERS MAX 5.10 2.51 2.10 1.26 2.25 2.06 INCHES MIN 0.193 0.091 0.075 0.046 0.077 0.077 MAX 0.201 0.099 0.083 0.050 0.089 0.081 DOCUMENT NO. Z8B00174295 SCALE 0 c D D1 D2 D3 E E1 E3 e N L L1 R Datasheet 0.66 21.10 16.85 1.35 0.78 15.90 13.50 1.55 0.59 20.90 16.25 1.05 0.58 15.70 13.10 1.35 0.026 0.831 0.663 0.053 0.031 0.626 0.531 0.061 0.023 0.823 0.640 0.041 0.023 0.618 0.516 0.053 0.214 (BSC) 5.44 (BSC) 19.80 1.90 20.10 4.30 2.10 0.780 0.075 13 5 5 7.5mm EUROPEAN PROJECTION ISSUE DATE 13-08-2014 3 3 0 0.791 0.169 0.083 REVISION 01 V2.2 2017-06-09 IKQ40N120CH3 HighspeedswitchingseriesthirdgenerationIGBT Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 14 V2.2 2017-06-09 IKQ40N120CH3 HighspeedswitchingseriesthirdgenerationIGBT RevisionHistory IKQ40N120CH3 Revision:2017-06-09,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2017-04-26 Final data sheet 2.2 2017-06-09 Update Figure 26 Datasheet 15 V2.2 2017-06-09 TrademarksofInfineonTechnologiesAG HVICTM,IPMTM,PFCTM,AU-ConvertIRTM,AURIXTM,C166TM,CanPAKTM,CIPOSTM,CIPURSETM,CoolDPTM, CoolGaNTM,COOLiRTM,CoolMOSTM,CoolSETTM,CoolSiCTM,DAVETM,DI-POLTM,DirectFETTM,DrBladeTM,EasyPIMTM, EconoBRIDGETM,EconoDUALTM,EconoPACKTM,EconoPIMTM,EiceDRIVERTM,eupecTM,FCOSTM,GaNpowIRTM, HEXFETTM,HITFETTM,HybridPACKTM,iMOTIONTM,IRAMTM,ISOFACETM,IsoPACKTM,LEDrivIRTM,LITIXTM,MIPAQTM, ModSTACKTM,my-dTM,NovalithICTM,OPTIGATM,OptiMOSTM,ORIGATM,PowIRaudioTM,PowIRStageTM,PrimePACKTM, PrimeSTACKTM,PROFETTM,PRO-SILTM,RASICTM,REAL3TM,SmartLEWISTM,SOLIDFLASHTM,SPOCTM, StrongIRFETTM,SupIRBuckTM,TEMPFETTM,TRENCHSTOPTM,TriCoreTM,UHVICTM,XHPTM,XMCTM TrademarksupdatedNovember2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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