CYStech Electronics Corp.
Spec. No. : C303S2
Issued Date : 2003.12.11
Revised Date
Page No. : 1/4
MDL914S2 CYStek Product Specification
High –speed switching diode
MDL914S2
Description
The MDL914S2 is a high-speed switching diode fabricated in planar technology, and encapsulated in
the small SOD-323 plastic SMD package.
Symbol Outline
Features
• Small plastic SMD package
• High switching speed: max. 4ns
• Reverse voltage: max. 100V
• Peak forward surge current: max. 500mA.
Applications
• High-speed switching in thick and thin-film circuits.
Absolute Maximum Ratings @TA=25℃
Parameters Symbol Min Max Unit
Reverse voltage VR - 100 V
Forward current IF - 200 mA
Peak forward surge current IFSM 500 mA
Junction Temperature Tj - 150
°C
Storage Temperature Tstg -65 +150
°C
SOD-323
MDL914S2
CYStech Electronics Corp.
Spec. No. : C303S2
Issued Date : 2003.12.11
Revised Date
Page No. : 2/4
MDL914S2 CYStek Product Specification
Electrical Characteristics @ TA=25℃ unless otherwise specified
Parameters Symbol Conditions Min Typ. Max Unit
Reverse breakdown voltage VR I
R=100µA
Forward voltage VF I
F=10mA - - 1 V
Reverse leakage current IR VR=20V
VR=75V - -
25
5
nA
µA
Diode capacitance CD V
R=0V, f=1MHz - - 4 pF
Reverse recovery time trr
when switched from IF=10mA
to IR=10mA,RL=100Ω,
measured at IR=1mA
- - 4 ns
Thermal Characteristics
Symbol Parameter Conditions Max Unit
Ptot, Ta=25℃
Derate above 25℃
Total device dissipation on FR-4 board Note 1 200
1.57
mW
mW/℃
Rth, j-a Thermal resistance from junction to ambient Note 1 635 ℃/W
Note 1: Device mounted on an FR-4 PCB.
CYStech Electronics Corp.
Spec. No. : C303S2
Issued Date : 2003.12.11
Revised Date
Page No. : 3/4
MDL914S2 CYStek Product Specification
Characteristic Curves
Forward Current vs Forward Voltage
0.1
1
10
100
0.2 0.4 0.6 0.8 1 1.2
Forward Voltage---VF(V)
Forward Current---I F(mA)
Ta=
- 40℃
Ta= 25℃
Ta=85℃
Reverse Leakage Current vs Reverse Voltage
0.001
0.01
0.1
1
10
100
0 1020304050
Reverse Voltage---VR(V)
Reverse Leakage Current---IR(μA)
Ta= 125
℃
Ta= 25℃
Ta=
150℃
Ta=55℃
Ta=85℃
Capacitance vs Reverse Voltage
0.52
0.56
0.6
0.64
0.68
0 0.2 0.4 0.6 0.8
Reverse Voltage---VR(V)
Diode Capacitance ---C D(pF)
f=1MHz
Ta=25℃
CYStech Electronics Corp.
Spec. No. : C303S2
Issued Date : 2003.12.11
Revised Date
Page No. : 4/4
MDL914S2 CYStek Product Specification
SOD-323 Dimension
*: Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max.
DIM Min. Max. Min. Max.
A 0.0630 0.0709 1.60 1.80 E 0.0060 REF 0.15 REF
B 0.0453 0.0531 1.15 1.35 H 0.0000 0.0040 0.00 0.10
C 0.0315 0.0394 0.80 1.00 J 0.0035 0.0070 0.089 0.177
D 0.0098 0.0157 0.25 0.40 K 0.0906 0.1063 2.30 2.70
Notes: 1.Controlling dimension : millimeters.
2.Lead thickness specified per L/F drawing with solder plating.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
D
A
HJ
K
C
E
B
12
Style: Pin 1.Cathode 2.Anode
2-Lead SOD-323 Plastic Surface
Mounted Package,
CYStek Package Code: S2
Marking:
5 H
5D
