2N6111 (R) SILICON PNP SWITCHING TRANSISTOR STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR APPLICATIONS: LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N6111 is an Epitaxial-Base PNP silicon transistor in Jedec TO-220 plastic package. It is intended for a wide variety of medium power switching and linear applications. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CBO Collector-Base Voltage (I E = 0) Value Unit -40 V V CEX Collector-Emitter Voltage (R BE = 100 ) -40 V V CEO Collector-Emitter Voltage (I B = 0) -30 V V EBO Emitter-Base Voltage (I C = 0) -5 V IC Collector Current -7 A IB Base Current -3 A o P tot Total Dissipation at T c = 25 C T stg Storage Temperature Tj Max. Operating Junction Temperature December 2003 40 W -65 to 150 o C 150 o C 1/4 2N6111 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 3.12 70 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Max. Unit -0.1 -2 mA mA V CE = -20 V -1 mA V EB = -5 V -1 mA I CEX Collector Cut-off Current (V BE = - 1.5V) V CE = -40 V V CE = -30 V I CEO Collector Cut-off Current (I B = 0) I EBO Emitter Cut-off Current (I C = 0) Min. T C = 150 o C V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) I C = -0.1 A V CER(sus) Collector-Emitter Sustaining Voltage (I C = 0) I C = -0.1 A R BE = 100 Typ. -30 V -40 V V CE(sat) Collector-Emitter Saturation Voltage I C = -2 A I C = -7 A I B = -0.2 A I B = -3.0 A -1 -3.5 V V V BE(on) Base-Emitter Voltage I C = -2 A I C = -7 A V CE = -4 V V CE = -4 V -5 -3 V V DC Current Gain I C = -3 A I C = -7 A V CE = -4 V V CE = -4 V 30 2.3 h fe Small Signal Current Gain I C = -0.5 A f = 50 KHz V CE = -4 V 20 fT Transition-Frequency I C = -0.5 A V CE = -4 V 4 Collector-base Capacitance V CB = -10 V f = 1 MHz h FE C cbo Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2/4 150 MHz 250 pF 2N6111 TO-220 MECHANICAL DATA DIM. mm MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.052 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10.00 10.40 0.394 L2 L4 16.40 13.00 0.409 0.645 14.00 0.511 0.551 0.116 L5 2.65 2.95 0.104 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 3.85 0.147 M DIA. 2.60 3.75 0.102 0.151 P011CI 3/4 2N6111 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2003 STMicroelectronics - All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4