2N6111
SILICON PNP SWITCHING TRANSISTOR
■STMicr o electronics PREF E RRED
SALESTYPE
■PNP TRANS IS TOR
APPLICATIONS:
■LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N6111 is an Epitaxial-Base PNP silicon
transistor in Jedec TO-220 plastic package. It is
intended for a wide variety of medium power
switching and linear applications.
®
INT E R NAL SCH E M ATI C DIAG RA M
December 2003
123
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltag e (IE = 0) -40 V
VCEX Collector-Emitter Voltage (RBE = 100 Ω)-40 V
VCEO Collector-Emitter Voltage (IB = 0) -30 V
VEBO Emitter-Base Voltage (IC = 0) -5 V
ICCollector Current -7 A
IBBase Current -3 A
Ptot Total Dissipation at Tc = 25 oC40W
T
stg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
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THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max 3.12
70
oC/W
oC/W
ELE CT RICAL CHAR ACT ERISTICS (Tcase = 25 oC unless otherwise specif ied)
Symbol Pa ra meter Test Conditions Min. Typ. Max. Unit
ICEX Collector Cut-off
Current (VBE = - 1.5V) VCE = -40 V
VCE = -30 V TC = 150 oC-0.1
-2 mA
mA
ICEO Collector Cut-off
Current (IB = 0) VCE = -20 V -1 mA
IEBO Emitter Cut-off Current
(IC = 0) VEB = -5 V -1 mA
VCEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = -0.1 A -30 V
VCER(sus)∗Collector-Emitter
Sustaining Voltage
(IC = 0)
IC = -0.1 A RBE = 100 Ω-40 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = -2 A IB = -0.2 A
IC = -7 A IB = -3.0 A -1
-3.5 V
V
VBE(on)∗Base-Emitter Voltag e IC = -2 A VCE = -4 V
IC = -7 A VCE = -4 V -5
-3 V
V
hFE∗DC Current Ga in IC = -3 A VCE = -4 V
IC = -7 A VCE = -4 V 30
2.3 150
hfe Small Signal Current
Gain IC = -0.5 A VCE = -4 V
f = 50 KHz 20
fTTransition-Frequency IC = -0.5 A VCE = -4 V 4 MHz
Ccbo Collector-base
Capacitance VCB = -10 V f = 1 MHz 250 pF
∗ P ulsed: P ulse duratio n = 300 µs, duty cycle 1.5 %.
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.052
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10.00 10.40 0.394 0.409
L2 16.40 0.645
L4 13.00 14.00 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.260
L9 3.50 3.93 0.137 0.154
M 2.60 0.102
DIA. 3.75 3.85 0.147 0.151
P011CI
TO-220 MECHANICAL DATA
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f th ird pa rties w hich ma y resu lt from i ts use. No l i cen se i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Spec ification mentioned in this publication are
subject to change without notice. This publication supersedes and r eplaces all information previously supplie d. STMicroelectronics products
ar e not aut horized for use as critical compo nents in life support devices or systems without express written approval of STMicroel ectronics.
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