/TechnicalInformation IGBT- IGBT-modules FP25R12W2T4_B11 EasyPIMTM2BModulPressFITmitTrench/FeldstoppIGBT4undEmitterControlled4Diode EasyPIMTM2BmodulePressFITwithtrench/fieldstopIGBT4andEmitterControlled4Diode PreliminaryData IGBT,/IGBT,Inverter /MaximumRatedValues Collector-emittervoltage Tvj = 25C VCES ContinuousDCcollectorcurrent TC = 100C, Tvj max = 175C TC = 25C, Tvj max = 175C IC nom IC 25 39 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 50 A Totalpowerdissipation TC = 25C, Tvj max = 175C Ptot 175 W Gate-emitterpeakvoltage VGES +/-20 V /CharacteristicValues Collector-emittersaturationvoltage min. IC = 25 A, VGE = 15 V IC = 25 A, VGE = 15 V IC = 25 A, VGE = 15 V Tvj = 25C Tvj = 125C Tvj = 150C Gatethresholdvoltage IC = 0,80 mA, VCE = VGE, Tvj = 25C Gatecharge V 1200 VCE sat A A typ. max. 1,85 2,15 2,25 2,25 V V V VGEth 5,2 5,8 6,4 V VGE = -15 V ... +15 V QG 0,20 C Internalgateresistor Tvj = 25C RGint 0,0 Inputcapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 1,45 nF Reversetransfercapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,05 nF - Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA - Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA td on 0,026 0,026 0,026 s s s tr 0,016 0,02 0,021 s s s td off 0,19 0,28 0,30 s s s tf 0,18 0,21 0,22 s s s () Turn-ondelaytime,inductiveload IC = 25 A, VCE = 600 V VGE = 15 V RGon = 20 Tvj = 25C Tvj = 125C Tvj = 150C () Risetime,inductiveload IC = 25 A, VCE = 600 V VGE = 15 V RGon = 20 Tvj = 25C Tvj = 125C Tvj = 150C () Turn-offdelaytime,inductiveload IC = 25 A, VCE = 600 V VGE = 15 V RGoff = 20 Tvj = 25C Tvj = 125C Tvj = 150C () Falltime,inductiveload IC = 25 A, VCE = 600 V VGE = 15 V RGoff = 20 Tvj = 25C Tvj = 125C Tvj = 150C () Turn-onenergylossperpulse IC = 25 A, VCE = 600 V, LS = 35 nH Tvj = 25C VGE = 15 V, di/dt = 1700 A/s (Tvj = 150C) Tvj = 125C RGon = 20 Tvj = 150C Eon 1,60 2,40 2,60 mJ mJ mJ ( Turn-offenergylossperpulse IC = 25 A, VCE = 600 V, LS = 35 nH Tvj = 25C VGE = 15 V, du/dt = 3600 V/s (Tvj = 150C) Tvj = 125C RGoff = 20 Tvj = 150C Eoff 1,45 2,15 2,35 mJ mJ mJ SCdata VGE 15 V, VCC = 800 V VCEmax = VCES -LsCE *di/dt ISC Thermalresistance,junctiontocase IGBT/perIGBT RthJC 0,75 0,85 K/W Thermalresistance,casetoheatsink IGBT/perIGBT Paste=1W/(m*K)/grease=1W/(m*K) RthCH 0,70 K/W Temperatureunderswitchingconditions Tvj op -40 preparedby:CM dateofpublication:2013-11-04 approvedby:RS revision:2.1 1 tP 10 s, Tvj = 150C 90 150 A C /TechnicalInformation IGBT- IGBT-modules FP25R12W2T4_B11 PreliminaryData ,/Diode,Inverter /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C ContinuousDCforwardcurrent Repetitivepeakforwardcurrent tP = 1 ms I2t- It-value VR = 0 V, tP = 10 ms, Tvj = 125C VR = 0 V, tP = 10 ms, Tvj = 150C VRRM 1200 V IF 25 A IFRM 50 A It 90,0 75,0 /CharacteristicValues min. typ. max. 1,75 1,75 1,75 2,25 As As Forwardvoltage IF = 25 A, VGE = 0 V IF = 25 A, VGE = 0 V IF = 25 A, VGE = 0 V Tvj = 25C Tvj = 125C Tvj = 150C VF Peakreverserecoverycurrent IF = 25 A, - diF/dt = 1700 A/s (Tvj=150C) VR = 600 V VGE = -15 V Tvj = 25C Tvj = 125C Tvj = 150C IRM 48,0 50,0 52,0 A A A Recoveredcharge IF = 25 A, - diF/dt = 1700 A/s (Tvj=150C) VR = 600 V VGE = -15 V Tvj = 25C Tvj = 125C Tvj = 150C Qr 2,50 4,40 4,90 C C C Reverserecoveryenergy IF = 25 A, - diF/dt = 1700 A/s (Tvj=150C) VR = 600 V VGE = -15 V Tvj = 25C Tvj = 125C Tvj = 150C Erec 0,95 1,75 2,05 mJ mJ mJ V V V Thermalresistance,junctiontocase /perdiode RthJC 1,10 1,20 K/W Thermalresistance,casetoheatsink /perdiode Paste=1W/(m*K)/grease=1W/(m*K) RthCH 0,90 K/W Temperatureunderswitchingconditions Tvj op -40 150 C ,/Diode,Rectifier /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C VRRM 1600 V () MaximumRMSforwardcurrentperchip TC = 100C IFRMSM 50 A MaximumRMScurrentatrectifieroutput TC = 100C IRMSM 50 A Surgeforwardcurrent tp = 10 ms, Tvj = 25C tp = 10 ms, Tvj = 150C IFSM 450 370 A A I2t- It-value tp = 10 ms, Tvj = 25C tp = 10 ms, Tvj = 150C It 1000 685 As As /CharacteristicValues min. typ. max. VF 0,90 V IR 1,00 mA /perdiode RthJC 1,05 1,15 K/W Thermalresistance,casetoheatsink /perdiode Paste=1W/(m*K)/grease=1W/(m*K) RthCH 0,95 K/W Temperatureunderswitchingconditions Tvj op preparedby:CM dateofpublication:2013-11-04 approvedby:RS revision:2.1 Forwardvoltage Tvj = 150C, IF = 25 A Reversecurrent Tvj = 150C, VR = 1600 V Thermalresistance,junctiontocase 2 C /TechnicalInformation IGBT- IGBT-modules FP25R12W2T4_B11 PreliminaryData IGBT,-/IGBT,Brake-Chopper /MaximumRatedValues Collector-emittervoltage Tvj = 25C VCES ContinuousDCcollectorcurrent TC = 100C, Tvj max = 175C TC = 25C, Tvj max = 175C IC nom IC 25 39 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 50 A Totalpowerdissipation TC = 25C, Tvj max = 175C Ptot 175 W Gate-emitterpeakvoltage VGES +/-20 V /CharacteristicValues Collector-emittersaturationvoltage min. IC = 25 A, VGE = 15 V IC = 25 A, VGE = 15 V IC = 25 A, VGE = 15 V Tvj = 25C Tvj = 125C Tvj = 150C Gatethresholdvoltage IC = 0,80 mA, VCE = VGE, Tvj = 25C Gatecharge V 1200 VCE sat A A typ. max. 1,85 2,15 2,25 2,25 V V V VGEth 5,2 5,8 6,4 V VGE = -15 V ... +15 V QG 0,20 C Internalgateresistor Tvj = 25C RGint 0,0 Inputcapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 1,45 nF Reversetransfercapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,05 nF - Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA - Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA td on 0,08 0,08 0,08 s s s tr 0,042 0,051 0,053 s s s td off 0,34 0,44 0,46 s s s tf 0,18 0,215 0,225 s s s () Turn-ondelaytime,inductiveload IC = 25 A, VCE = 600 V VGE = 15 V RGon = 68 Tvj = 25C Tvj = 125C Tvj = 150C () Risetime,inductiveload IC = 25 A, VCE = 600 V VGE = 15 V RGon = 68 Tvj = 25C Tvj = 125C Tvj = 150C () Turn-offdelaytime,inductiveload IC = 25 A, VCE = 600 V VGE = 15 V RGoff = 68 Tvj = 25C Tvj = 125C Tvj = 150C () Falltime,inductiveload IC = 25 A, VCE = 600 V VGE = 15 V RGoff = 68 Tvj = 25C Tvj = 125C Tvj = 150C () Turn-onenergylossperpulse IC = 25 A, VCE = 600 V, LS = t.b.d. nH VGE = 15 V RGon = 68 Tvj = 25C Tvj = 125C Tvj = 150C Eon 3,90 5,00 5,40 mJ mJ mJ ( Turn-offenergylossperpulse IC = 25 A, VCE = 600 V, LS = t.b.d. nH VGE = 15 V RGoff = 68 Tvj = 25C Tvj = 125C Tvj = 150C Eoff 1,50 2,20 2,40 mJ mJ mJ SCdata VGE 15 V, VCC = 800 V VCEmax = VCES -LsCE *di/dt tP 10 s, Tvj = 150C ISC Thermalresistance,junctiontocase IGBT/perIGBT RthJC 0,75 0,85 K/W Thermalresistance,casetoheatsink IGBT/perIGBT Paste=1W/(m*K)/grease=1W/(m*K) RthCH 0,70 K/W Temperatureunderswitchingconditions Tvj op -40 preparedby:CM dateofpublication:2013-11-04 approvedby:RS revision:2.1 3 90 150 A C /TechnicalInformation IGBT- IGBT-modules FP25R12W2T4_B11 PreliminaryData -/Diode,Brake-Chopper /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C ContinuousDCforwardcurrent Repetitivepeakforwardcurrent tP = 1 ms I2t- It-value VR = 0 V, tP = 10 ms, Tvj = 125C VR = 0 V, tP = 10 ms, Tvj = 150C VRRM 1200 V IF 10 A IFRM 20 A It 16,0 14,0 /CharacteristicValues min. typ. max. 1,75 1,75 1,75 2,25 As As Forwardvoltage IF = 10 A, VGE = 0 V IF = 10 A, VGE = 0 V IF = 10 A, VGE = 0 V Tvj = 25C Tvj = 125C Tvj = 150C VF Peakreverserecoverycurrent IF = 10 A, - diF/dt = 500 A/s (Tvj=150C) VR = 600 V Tvj = 25C Tvj = 125C Tvj = 150C IRM 12,0 10,0 8,00 A A A Recoveredcharge IF = 10 A, - diF/dt = 500 A/s (Tvj=150C) VR = 600 V Tvj = 25C Tvj = 125C Tvj = 150C Qr 0,90 1,70 1,90 C C C Reverserecoveryenergy IF = 10 A, - diF/dt = 500 A/s (Tvj=150C) VR = 600 V Tvj = 25C Tvj = 125C Tvj = 150C Erec 0,24 0,52 0,59 mJ mJ mJ Thermalresistance,junctiontocase /perdiode RthJC 1,75 1,90 K/W Thermalresistance,casetoheatsink /perdiode Paste=1W/(m*K)/grease=1W/(m*K) RthCH 1,30 K/W Temperatureunderswitchingconditions Tvj op -40 150 min. typ. max. R25 5,00 k R/R -5 5 % P25 20,0 mW V V V C /NTC-Thermistor /CharacteristicValues Ratedresistance TC = 25C R100 DeviationofR100 TC = 100C, R100 = 493 Powerdissipation TC = 25C B- B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B- B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B- B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K Specificationaccordingtothevalidapplicationnote. preparedby:CM dateofpublication:2013-11-04 approvedby:RS revision:2.1 4 /TechnicalInformation IGBT- IGBT-modules FP25R12W2T4_B11 PreliminaryData /Module Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. Internalisolation (class1,IEC61140) basicinsulation(class1,IEC61140) AI2O3 Creepagedistance -/terminaltoheatsink -/terminaltoterminal 11,5 6,3 mm Clearance -/terminaltoheatsink -/terminaltoterminal 10,0 5,0 mm Comperativetrackingindex CTI > 200 VISOL kV 2,5 min. typ. max. LsCE 30 nH RCC'+EE' RAA'+CC' 5,00 6,00 m Tstg -40 125 C Anpresskraft fur mech. Bef. pro Feder mountig force per clamp F 40 - 80 N Weight G 39 g preparedby:CM dateofpublication:2013-11-04 approvedby:RS revision:2.1 , Strayinductancemodule ,- Moduleleadresistance,terminals-chip TC=25C,/perswitch Storagetemperature 5 /TechnicalInformation IGBT- IGBT-modules FP25R12W2T4_B11 PreliminaryData IGBT,) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V IGBT,) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=150C 50 50 Tvj = 25C Tvj = 125C Tvj = 150C 40 40 35 35 30 30 25 20 15 15 10 10 5 5 0,0 0,5 1,0 1,5 2,0 VCE [V] 2,5 3,0 3,5 0 4,0 1,0 2,0 3,0 4,0 5,0 40 50 IGBT,) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=15V,RGon=20,RGoff=20,VCE=600V 50 10,0 Tvj = 25C Tvj = 125C Tvj = 150C 45 35 7,0 30 6,0 E [mJ] 8,0 25 5,0 20 4,0 15 3,0 10 2,0 5 1,0 5 6 7 Eon, Tvj = 125C Eoff, Tvj = 125C Eon, Tvj = 150C Eoff, Tvj = 150C 9,0 40 0 0,0 VCE [V] IGBT,() transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V IC [A] 25 20 0 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 45 IC [A] IC [A] 45 8 9 VGE [V] 10 11 12 0,0 13 0 10 20 30 IC [A] preparedby:CM dateofpublication:2013-11-04 approvedby:RS revision:2.1 6 /TechnicalInformation IGBT- IGBT-modules FP25R12W2T4_B11 PreliminaryData IGBT,) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=15V,IC=25A,VCE=600V IGBT, transientthermalimpedanceIGBT,Inverter ZthJH=f(t) 12 10 Eon, Tvj = 125C Eoff, Tvj = 125C Eon, Tvj = 150C Eoff, Tvj = 150C 11 10 ZthJH : IGBT 9 8 ZthJH [K/W] E [mJ] 7 6 5 1 4 3 2 i: 1 2 3 4 ri[K/W]: 0,084 0,195 0,587 0,585 i[s]: 0,0005 0,005 0,05 0,2 1 0 0 20 40 60 80 0,1 0,001 100 120 140 160 180 200 RG [] IGBT,RBSOA reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=15V,RGoff=20,Tvj=150C 1 10 50 IC, Modul IC, Chip 50 Tvj = 25C Tvj = 125C Tvj = 150C 45 45 40 40 35 35 30 30 IF [A] IC [A] 0,1 t [s] ,) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 55 25 25 20 20 15 15 10 10 5 5 0 0,01 0 200 400 600 800 VCE [V] 1000 1200 0 1400 preparedby:CM dateofpublication:2013-11-04 approvedby:RS revision:2.1 7 0,0 0,5 1,0 1,5 VF [V] 2,0 2,5 3,0 /TechnicalInformation IGBT- IGBT-modules FP25R12W2T4_B11 PreliminaryData ,) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=20,VCE=600V ,) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=25A,VCE=600V 4,0 3,0 Erec, Tvj = 125C Erec, Tvj = 150C 3,5 Erec, Tvj = 125C Erec, Tvj = 150C 2,7 2,4 3,0 2,1 1,8 E [mJ] E [mJ] 2,5 2,0 1,5 1,2 1,5 0,9 1,0 0,6 0,5 0,0 0,3 0 5 10 15 20 25 30 IF [A] 35 40 45 0,0 50 , transientthermalimpedanceDiode,Inverter ZthJH=f(t) 0 20 40 60 80 100 120 140 160 180 200 RG [] ,) forwardcharacteristicofDiode,Rectifier(typical) IF=f(VF) 10 50 ZthJH: Diode Tvj = 25C Tvj = 150C 45 40 35 IF [A] ZthJH [K/W] 30 1 25 20 15 10 i: 1 2 3 4 ri[K/W]: 0,166 0,359 0,821 0,654 i[s]: 0,0005 0,005 0,05 0,2 0,1 0,001 0,01 0,1 t [s] 1 5 0 10 preparedby:CM dateofpublication:2013-11-04 approvedby:RS revision:2.1 8 0,2 0,4 0,6 0,8 VF [V] 1,0 1,2 1,4 /TechnicalInformation IGBT- IGBT-modules FP25R12W2T4_B11 PreliminaryData IGBT,-) outputcharacteristicIGBT,Brake-Chopper(typical) IC=f(VCE) VGE=15V -) forwardcharacteristicofDiode,Brake-Chopper(typical) IF=f(VF) 50 20 Tvj = 25C Tvj = 125C Tvj = 150C 40 16 35 14 30 12 25 10 20 8 15 6 10 4 5 2 0 0,0 0,5 1,0 1,5 2,0 2,5 VCE [V] 3,0 3,5 0 4,0 100000 Rtyp R[] 10000 1000 0 20 40 60 80 100 TC [C] 0,0 0,5 1,0 1,5 VF [V] NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 100 Tvj = 25C Tvj = 125C Tvj = 150C 18 IF [A] IC [A] 45 120 140 160 preparedby:CM dateofpublication:2013-11-04 approvedby:RS revision:2.1 9 2,0 2,5 /TechnicalInformation IGBT- IGBT-modules FP25R12W2T4_B11 PreliminaryData /circuit_diagram_headline J /packageoutlines Infineon preparedby:CM dateofpublication:2013-11-04 approvedby:RS revision:2.1 10 /TechnicalInformation IGBT- IGBT-modules FP25R12W2T4_B11 PreliminaryData www.infineon.com - - - Terms&Conditionsofusage Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch application. Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered. Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically interestedwemayprovideapplicationnotes. Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe salesoffice,whichisresponsibleforyou. ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please note,thatforanysuchapplicationsweurgentlyrecommend -toperformjointRiskandQualityAssessments; -theconclusionofQualityAgreements; -toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon therealizationofanysuchmeasures. Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers. Changesofthisproductdatasheetarereserved. preparedby:CM dateofpublication:2013-11-04 approvedby:RS revision:2.1 11