1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
36
2N4402, 2N4403 General Purpose Transistors
PNP Si-Epitaxial PlanarTransistors PNP
Version 2004-01-20
Power dissipation – Verlustleistung 625 mW
Plastic case TO-92
Kunststoffgehäuse (10D3)
Weight approx. – Gewicht ca. 0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard Pinning
1 = C 2 = B 3 = E Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)
2N4402, 2N4403
Collector-Emitter-voltage B open - VCE0 40 V
Collector-Base-voltage E open - VCE0 40 V
Emitter-Base-voltage C open - VEB0 5 V
Power dissipation – Verlustleistung Ptot 625 mW 1)
Collector current – Kollektorstrom (dc) - IC600 mA
Junction temp. – Sperrschichttemperatur Tj150°C
Storage temperature – Lagerungstemperatur TS- 55…+ 150°C
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
Collector saturation volt. – Kollektor-Sättigungsspannung
- IC = 150 mA, - IB = 15 mA
- IC = 500 mA, - IB = 50 mA - VCEsat
- VCEsat
–
––
–400 mV
750 mV
Base saturation voltage – Basis-Sättigungsspannung
- IC = 150 mA, - IB = 15 mA
- IC = 500 mA, - IB = 50 mA - VBEsat
- VBEsat
750 mV
––
–950 mV
1.3 V
Collector cutoff current – Kollektorreststrom
- VCE = 35 V, - VEB = 0.4 V - ICBV – – 100 nA
Emitter cutoff current – Emitterreststrom
- VCE = 35 V, - VEB = 0.4 V - IEBV – – 100 nA
1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 37
General Purpose Transistors 2N4402, 2N4403
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 1 V, - IC = 0.1 mA 2N4403 hFE 30 – –
- VCE = 1 V, - IC = 1 mA 2N4402
2N4403 hFE
hFE
30
60 –
––
–
- VCE = 1 V, - IC = 10 mA 2N4402
2N4403 hFE
hFE
50
100 –
––
–
- VCE = 1 V, - IC = 150 mA 2N4402
2N4403 hFE
hFE
50
100 –
–150
300
- VCE = 1 V, - IC = 500 mA 2N4402
2N4403 hFE
hFE
20
20 –
––
–
h-Parameters at - VCE = 10 V, - IC = 1 mA, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverstärkung 2N4402
2N4403 hfe
hfe
30
60 –
–250
500
Input impedance
Eingangs-Impedanz 2N4402
2N4403 hie
hie
0.75 kS
1.5 kS–
–7.5 kS
15 kS
Output admittance – Ausgangs-Leitwert hoe 1 µS – 100 µS
Reverse voltage ratio – Spannungsrückwirkg. hre 0.1 *10-4 – 8 *10-4
Gain-Bandwidth Product – Transitfrequenz
- VCE = 10 V, - IC = 20 mA,
f = 100 MHz 2N4402
2N4403 fT
fT
150 MHz
200 MHz –
––
–
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, - IE = ie = 0, f = 1 MHz CCB0 – – 8.5 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 2 V, IC = ic = 0, f = 1 MHz CEB0 – – 30 pF
Switching times – Schaltzeiten
turn-on time
- ICon = 150 mA
- IBon = 15 mA
IBoff = 15 mA
ton – – 35 ns
delay time td– – 15 ns
rise time tr– – 20 ns
turn-off time toff – – 255 ns
storage time ts– – 225 ns
fall time tf– – 30 ns
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA 200 K/W 1)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren 2N4400, 2N4401
