3
Absolute Maximum Ratings[1] TA = 25°C
Symbol Parameter Value
IfForward Current (1 ms Pulse) 1 Amp
PtTotal Device Dissipation 250 mW[2]
PIV Peak Inverse Voltage Same as VBR
TjJunction Temperature 150°C
Tstg Storage Temperature -65 to 150°C
Notes:
1. Operation in excess of any one of these conditions may result in permanent
damage to this device.
2. CW Power Dissipation at TLEAD = 25°C. Derate to zero at maximum rated
temperature.
Quad Capacitance
Capacitance of Schottky diode
quads is measured using an
HP4271 LCR meter. This
instrument effectively isolates
individual diode branches from
the others, allowing accurate
capacitance measurement of each
branch or each diode. The
conditions are: 20 mV R.M.S.
voltage at 1 MHz. HP defines this
measurement as “CM”, and it is
equivalent to the capacitance of
the diode by itself. The equivalent
diagonal and adjacent
capacitances can then be
calculated by the formulas given
below.
In a quad, the diagonal capaci-
tance is the capacitance between
points A and B as shown in the
figure below. The diagonal
capacitance is calculated using
the following formula
C1 x C2 C3 x C4
CDIAGONAL = _______ + _______
C1 + C2 C3 + C4
C
1
C
2
C
4
C
3
A
B
C
The equivalent adjacent
capacitance is the capacitance
between points A and C in the
figure below. This capacitance is
calculated using the following
formula 1
CADJACENT = C1 + ____________
1 1 1
–– + –– + ––
C2 C3C4
This information does not apply
to cross-over quad diodes.
SPICE Parameters
Parameter Units HSMS-280X HSMS-281X HSMS-282X HSMS-286X
BVV 75 25 15 7.0
CJ0 pF 1.6 1.1 0.7 0.18
EGeV 0.69 0.69 0.69 0.69
IBV A 10E-5 10E-5 10E-4 10E-5
ISA 3 x 10E-8 4.8 x 10E-9 2.2 x 10E-8 5.0 x 10E-8
N 1.08 1.08 1.08 1.08
RSΩ30 10 6.0 5.0
PBV 0.65 0.65 0.65 0.65
PT2222
M 0.5 0.5 0.5 0.5