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FFSP3065A Silicon Carbide Schottky Diode 650 V, 30 A Features Description o * Max Junction Temperature 175 C SiC Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material - Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost. Its high reliability ensures robust operation during surge or over-voltage conditions * Avalanche Rated 180 mJ * High Surge Current Capacity * Positive Temperature Coefficient * Ease of Paralleling * No Reverse Recovery / No Forward Recovery Applications * General Purpose * SMPS, Solar Inverter, UPS * Power Switching Circuits Absolute Maximum Ratings TC = 25 oC unless otherwise noted. Symbol VRRM Parameter Peak Repetitive Reverse Voltage EAS Single Pulse Avalanche Energy IF (Note 1) Continuous Rectified Forward Current @ TC < 148 oC FFSP3065A 650 Unit V 180 mJ 30 A 1125 A TC = 150 oC, 10 s 1040 A TC = 25 oC, 10 s IF, Max Non-Repetitive Peak Forward Surge Current IF,SM Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 150 A IF,RM Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 75 A Ptot Power Dissipation 240 W TJ, TSTG Operating and Storage Temperature Range TC = 25 oC TC = 150 oC 40 W o -55 to +175 C Thermal Characteristics Symbol RJC Parameter FFSP3065A Thermal Resistance, Junction to Case, Max. (c)2016 Fairchild Semiconductor Corporation FFSP3065A Rev.1.0 0.62 1 Unit o C/W www.fairchildsemi.com FFSP3065A -- Silicon Carbide Schottky Diode July 2016 Part Number Top Mark FFSP3065A FFSP3065A Package TO-220-2L Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25 oC unless otherwise noted. Symbol Parameter Test Conditions Min. o IF = 30 A, TC = 25 C - 1.50 1.75 1.60 2.0 IF = 30 A, TC = 175 oC - 1.72 2.4 - - 200 VR = 650 V, TC = 125 oC - - 400 VR = 650 V, TC = 175 oC - - 600 V = 400 V - 100 - VR = 1 V, f = 100 kHz - 1705 - VR = 200 V, f = 100 kHz - 180 - VR = 400 V, f = 100 kHz - 130 - VR = 650 V, TC = 25 oC IR Reverse Current Total Capacitive Charge QC C Total Capacitance Max. - IF = 30 A, TC = 125 oC Forward Voltage VF Typ. Unit V A nC pF Notes: 1: EAS of 180 mJ is based on starting TJ = 25 C, L = 0.5 mH, IAS = 27 A, V = 50 V. Typical Characteristics TJ = 25 C unless otherwise noted. Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 30 -5 10 TJ = 25 oC IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (A) TJ = 75 oC 20 TJ = -55 oC 10 TJ = 175 oC TJ = 125 oC 0 0.0 TJ = 175 oC -6 10 -7 10 TJ = 125 oC -8 10 TJ = 75 oC TJ = -55 oC -9 0.5 1.0 1.5 10 2.0 100 200 Figure 3. Current Derating PTOT, POWER DISSIPATION (W) IF, PEAK FORWARD CURRENT (A) 500 600 250 D = 0.1 D = 0.2 D = 0.3 D = 0.5 50 D = 0.7 0 25 400 Figure 4. Power Derating 150 100 300 VR, REVERESE VOLTAGE (V) VF, FORWARD VOLTAGE (V) 200 TJ = 25 oC D=1 50 75 100 125 150 150 100 50 0 25 175 o TC, CASE TEMPERATURE ( C) (c)2016 Fairchild Semiconductor Corporation FFSP3065A Rev.1.0 200 50 75 100 125 150 175 o TC, CASE TEMPERATURE ( C) 2 www.fairchildsemi.com FFSP3065A -- Silicon Carbide Schottky Diode Package Marking and Ordering Information Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage 5000 120 100 CAPACITANCE (pF) QC, CAPACITIVE CHARGE (nC) 140 80 60 40 1000 100 20 0 0 100 200 300 400 500 10 0.1 600650 VR, REVERSE VOLTAGE (V) 1 10 100 650 VR, REVERESE VOLTAGE (V) Figure 7. Capacitance Stored Energy EC, CAPACITIVE ENERGY (J) 30 20 10 0 0 100 200 300 400 500 600650 VR, REVERVE VOLTAGE (V) Figure 8. Junction-to-Case Transient Thermal Response Curve NORMALIZED THERMAL IMPEDANCE, ZJC 2 1 D=0.5 PDM D=0.2 t1 D=0.1 D=0.05 D=0.02 D=0.01 0.1 t2 NOTES: ZJC(t) = r(t) x RJC RJC = 0.62 oC/W Peak TJ = PDM x ZJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 0.05 -4 10 -3 -2 10 10 -1 10 1 t, RECTANGULAR PULSE DURATION (sec) (c)2016 Fairchild Semiconductor Corporation FFSP3065A Rev.1.0 3 www.fairchildsemi.com FFSP3065A -- Silicon Carbide Schottky Diode Typical Characteristics TJ = 25 C unless otherwise noted. FFSP3065A -- Silicon Carbide Schottky Diode Test Circuit and Waveforms Figure 9. Unclamped Inductive Switching Test Circuit & Waveform L = 0.5mH (c)2016 Fairchild Semiconductor Corporation FFSP3065A Rev.1.0 4 www.fairchildsemi.com 4.09 3.50 0.36 M 10.67 9.65 A B A M B 3.43 2.54 8.89 6.86 1.40 0.51 7 3 6.86 5.84 16.51 14.22 9.40 8.38 5 3 1 2 5 3 16.15 15.75 13.40 12.19 6.35 MAX 0.60 MAX C 1.65 1.25 1.91 14.73 13.60 0.61 0.33 2.54 2.92 2.03 1.02 0.38 5.08 5 3 0.36 M C A B 5 3 4.80 4.30 NOTES: A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K, VARIATION AC,DATED APRIL 2002. B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSION AND TOLERANCE AS PER ASME Y14.5-2009. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DRAWING FILE NAME: TO220A02REV5 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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