FFSP3065A - FAIRCHILD SEMICONDUCTOR

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July 2016

FFSP3065A — Silicon Carbide Schottky Diode

FFSP3065A Rev.1.0

www.fairchildsemi.com

Absolute Maximum Ratings TC = 25 oC unless otherwise noted.

Thermal Characteristics

Symbol Parameter FFSP3065A Unit

VRRM Peak Repetitive Reverse Voltage 650 V

EAS Single Pulse Avalanche Energy (Note 1) 180 mJ

IFContinuous Rectified Forward Current @ TC < 148 oC 30 A

IF, Max Non-Repetitive Peak Forward Surge Current

TC = 25 oC, 10 s1125 A

TC = 150 oC, 10 s1040 A

IF,SM N o n - R e p e t i t i v e F o r w a r d S u r g e C u r r e n t H a l f - S i ne Pulse, tp = 8.3 ms 150 A

IF,RM Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 75 A

Ptot Power Dissipation TC = 25 oC 240 W

TC = 150 oC 40 W

TJ, TSTG Operating and Storage Temperature Range -55 to +175 oC

Symbol Parameter FFSP3065A Unit

RJC Thermal Resistance, Junction to Case, Max. 0.62 oC/W

FFSP3065A

Silicon Carbide Schottky Diode

650 V, 30 A

Features

• Max Junction Temperature 175 oC

• Avalanche Rated 180 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

• No Reverse Recovery / No Forward Recovery

Applications

• General Purpose

• SMPS, Solar Inverter, UPS

• Power Switching Circuits

Description

SiC Schottky Diode has no switching loss, provides improved

system efficiency against Si diodes by utilizing new

semiconductor material - Silicon Carbide, enables higher

operating frequency, and helps increasing power density and

reduction of system size/cost. Its high reliability ensures robust

operation during surge or over-voltage conditions

FFSP3065A — Silicon Carbide Schottky Diode

FFSP3065A Rev.1.0

www.fairchildsemi.com

Package Marking and Ordering Information

Electrical Characteristics TC = 25 oC unless otherwise noted.

Typical Characteristics TJ = 25 °C unless otherwise noted.

Figure 1. Forward Characteristics Figure 2. Reverse Characteristics

Figure 3. Current Derating Figure 4. Power Derating

Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity

FFSP3065A FFSP3065A TO-220-2L Tube N/A N/A 50 units

Symbol Parameter Test Conditions Min. Typ. Max. Unit

VFForward Voltage

IF = 30 A, TC = 25 oC - 1.50 1.75

VIF = 30 A, TC = 125 oC - 1.60 2.0

IF = 30 A, TC = 175 oC - 1.72 2.4

IRReverse Current

VR = 650 V, TC = 25 oC - - 200

AVR = 650 V, TC = 125 oC - - 400

VR = 650 V, TC = 175 oC - - 600

QCTotal Capacitive Charge V = 400 V - 100 - nC

C Total Capacitance

VR = 1 V, f = 100 kHz - 1705 -

pFVR = 200 V, f = 100 kHz - 180 -

VR = 400 V, f = 100 kHz - 130 -

100 200 300 400 500 600

10-9

10-8

10-7

10-6

10-5

IR, REVERSE CURRENT (A)

VR, REVERESE VOLTAGE (V)

TJ = 175 oC

TJ = 125 oC

TJ = -55 oC

TJ = 25 oC

TJ = 75 oC

0.0 0.5 1.0 1.5 2.0

TJ = 175 oC

TJ = 125 oC

TJ = 75 oC

TJ = 25 oC

TJ = -55 oC

IF, FORWARD CURRENT (A)

VF, FORWARD VOLTAGE (V)

25 50 75 100 125 150 175

100

150

200 D = 0.1

D = 0.2

D = 0.3

D = 0.5

D = 0.7 D = 1

IF, PEAK FORWARD CURRENT (A)

TC, CASE TEMPERATURE (oC)

25 50 75 100 125 150 175

100

150

200

250

PTOT, POWER DISSIPATION (W)

TC, CASE TEMPERATURE (oC)

Notes:

1: EAS of 180 mJ is based on starting TJ = 25 °C, L = 0.5 mH, IAS = 27 A, V = 50 V.

FFSP3065A — Silicon Carbide Schottky Diode

FFSP3065A Rev.1.0

www.fairchildsemi.com

Typical Characteristics TJ = 25 °C unless otherwise noted.

Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage

Figure 7. Capacitance Stored Energy

Figure 8. Junction-to-Case Transient Thermal Response Curve

0 100 200 300 400 500 600650

100

120

140

QC, CAPACITIVE CHARGE (nC)

VR, REVERSE VOLTAGE (V)

0.1 1 10 100 650

100

1000

5000

CAPACITANCE (pF)

VR, REVERESE VOLTAGE (V)

0 100 200 300 400 500 600650

EC, CAPACITIVE ENERGY (J)

VR, REVERVE VOLTAGE (V)

10-4 10-3 10-2 10-1 1

0.1

SINGLE PULSE

D=0.01

D=0.02

D=0.05

D=0.1

D=0.2

D=0.5

0.05

NORMALIZED THERMAL

IMPEDANCE, ZJC

t, RECTANGULAR PULSE DURATION (sec)

NOTES:

ZJC(t) = r(t) x RJC

RJC = 0.62 oC/W

Duty Cycle, D = t1 / t2

Peak TJ = PDM x ZJC(t) + TC

PDM

FFSP3065A — Silicon Carbide Schottky Diode

FFSP3065A Rev.1.0

www.fairchildsemi.com

Test Circuit and Waveforms

Figure 9. Unclamped Inductive Switching Test Circuit & Waveform

L = 0.5mH

5°

3°

5°

3°

4.80

4.30

10.67

9.65

4.09

3.50

3.43

2.54

9.40

8.38

2.54

5.08

16.51

14.22

14.73

13.60

1.02

0.38

6.35 MAX

1.65

1.25

1.91

0.36

B A

0.36

A B

1.40

0.51

7°

3°

6.86

5.84

2.92

2.03

0.61

0.33

5°

3°

5°

3°

13.40

12.19

8.89

6.86

0.60 MAX

16.15

15.75

NOTES:

A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K,

VARIATION AC,DATED APRIL 2002.

B. ALL DIMENSIONS ARE IN MILLIMETERS.

C. DIMENSION AND TOLERANCE AS PER ASME

Y14.5-2009.

D. DIMENSIONS ARE EXCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR PROTRUSIONS.

E. DRAWING FILE NAME: TO220A02REV5

1 2

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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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