HITACHI/ LOGIC/ARRAYS/MEM O4 Dell 449203 0013050 iy ,. 4496203 HITACHI/ LOGIC/ARRAYS/MEM 04 13050 OD HN27C256G Series T- 46-13-24 32768-word x 8-bit CMOS UV Erasable and Programmable ROM FEATURES @ Low Power Dissipation ........ 40mW/MHz max. (Active Mode} 110W max. (Stand-by Mode) @ Access Time 2... 2c cece cece 170/200/250/300ns (max.) @ Single Power Supply ........-. 5V + 5% High Performance Programming .. Program Voltage: +12.5V DC @ Static. ....... seen c ences No Clocks Required @ Inputs and Outputs TTL Compatible During Both Read and Program Modes. @ Absolute Max. Rating of Vpp pin. . .14.0V (DG-28) @ Device Identifier Mode .......... Manufacturer Code and Device Code = PIN ARRANGEMENT @ Compatible with INTEL 27256 , ac # BLOCK DIAGRAM " F Ar }3 -E : (i a : 512 X 512 a [5] ACAD, B MEMORY. MATRIX a Ce * : - : As a o FF At fa 1/00 J a BY a Y-GATING vore a8) Y-DECODE! o fi A oh {x Or 3] Vs [4 cE O-D4 _ } . (Top View) 5 O-De Aton ve O Ver ine OX b wi THRESHOLD a MODE SELECTION Pins |- CE OE AS Vpp Vee Outputs Mode Q0) (22) (24) qa (28) (11 - 13, 15 19) Read Vir, Vy, x Voc Veo Dout Output Disable Vin View x Voc Voc High Z Standby Vins x x Yoo Voc High Z High Performance Program Vin Virz x Vpp Veco Din Program Verify Vig Vin x Vpp Vee Dout ~ Optional Verify Vin, Viz, x Vpp Veo Dout Program Inhibit Vrey Viey x Vpp Veo High Z Identifier Vin Vin Vy? Voc Voc Code Notes) *1. X: Dont care. ' *2, Vey: 12.0V 0.5V. @ HITACHI Hitachi America Ltd. 2210 O'Toole Ave. San Jose, CA 95131 (408) 435-8300 553a HITACHI/ LOGIC/ARRAYS/MEM o4 Dey y44h203 0013051 07 "4496203 HITACHI/ LOGIC/ARRAYS/MEM | - 04E 13051 OD HN27C256G Series a ABSOLUTE MAXIMUM RATINGS TVGN8 29 Item Symbol Value Unit Operating Temperature Range Topr 0 to +70 c Storage Temperature Range Tstg -65 to +125 c Storage Temperature Range Under Bias Thias -10 to +80 C All Input and Output Voltage! Vin. Vour -0.6%2 to +7 Vv Voltage on Pin 24 (A9)"! VID -0.62 to +13.5 Vv Vpp Voltage"! Vpp -0.6 to +14 Vv Vcc Voltage"! Voc -0.6 to +7 Vv Notes: *1. With respect to Vgg. : #2, =1.0V for pulse width S 50ns. = READ OPERATION @ DC AND OPERATING CHARACTERISTICS (7, = 0 to +70C, Voc = 5V 5%, Vpp = Voc) Parameter Symbol Test Condition min typ max Unit Input Leakage Current yr Vin = 5.25V ~ - 2 uA Output Leakage Current Ito Vout = 5.25V/0.45V - - 2 HA Vpp Current Ipp] Vpp = 5.5V - 1 20 BA Voc Current (Standby) sB\ = YH ! mA Isp2 CE = Vcc 0.3V - 1 20 BA Ico, | CE=Viz,lout= 0mA - - 30 mA Vcc Current (Active) [c2 f= 5 MHz, Joyt =O mA - - 30 mA Icc3 | fel MHz, Jone = OMA - - 8 mA Input Voltage VIL -0.3"! = 0.8 V Vint 2.2 - [Peer1.0"2) ov VoL | for=2.1mA - - 0.45 Vv Output Voltage Vou! | fon=-400uA 2.4 - - Vv Von? | low =-100nA Vcc-0.7 - - v Notes) *1. -1.0V for pulse width S 50ns. *2. Voc + 1.5V for pulse width S 20ns. If Vyzz is over the specified maximum value, read operation cannot be guaranteed. AC CHARACTERISTICS (Tq = 0 to +70C, Voc = 5V +5%, Vpp = Vcc) _.. |HN27C256G-17|HN27C256G-20|HN27C256G-25 [HN27C256G-30 . Parameter Symbol | Test Condition . - Unit min. | max. | min. | max. | min. | max. | min. | max. Address to Output t CESOE=Y; 170 200 250 300 Delay [ACC =VIL - - - - ns CE to Output Delay tcE |OE=V7z, - 170 - 200 - 250 - 300 | ns OE to Output Delay tog | CE=Viz 10 60 10 70 10 100 10 120 { ns DE High to Output | tye | CE+V iz, ol so} of sol of 60 | o | 105 | as Address to Output toH \CE=OE=V7z, oj} - Oo; - o| - 0 - | ns Note: tpF defines the time at which the Output achieves the open circuit condition and Data is no longer driven. @ HITACHI Hitachi America Ltd. 2210 O'Toole Ave. San Jose, CA 95131 (408) 435-8300HITACHI/ LOGIC/ARRAYS/MEM O4 Dey 4U4Y4L203 0013052 2 I @ SWITCHING CHARACTERISTICS TEST CONDITION Input pulse levels: Input rise and fall time: Output load: 0,45V to 2.4V <20ns 1 TTL Gate +100pF Reference tevel for measuring timing: 0.8V and 2,0V Address Stand by Mode Dats Out CAPACITANCE (72=25C, f=1MHz) Active Mode HN27C256G Series T*UOTF-29 Data Out Valid Parameter Symbol Test Condition Min. Typ. Max. Unit. Input Capacitance Cin Vin = O0V - 4 6 pr Output Capacitance Cout Vout = OV ~ 8 12 pF HIGH PERFORMANCE PROGRAMMING This device can be applied the High Performance Programming algorithm shown in following flowchart. This algorithm allows to obtain faster programming time without any voltage stress to the device nor deterioration in reliability of programmed data. [ Address + 1 Address } @ HITACHI SET PROG. VERIFY NODE Vers 125 20.0 Vee=GOdIUSV SET READ MODE Ver=5.02025V Ver= Ver High Performance Programming Flowchart Hitachi America Ltd. 2210 O'Toole Ave. San Jose, CA 95131 (408) 435-8300 555HITACHI/ LOGIC/ARRAYS/MEM O4 DEB) 44203 0013053 4 I _ 4496203 HITACHI/ LOGIC/ARRAYS/MEM O4E 13053 OD HN27C256G Series FU) F-29 _ = HIGH PERFORMANCE PROGRAMMING OPERATION DC PROGRAMMING CHARACTERISTICS (72=25C#5C, Vcc=6V20.25V, Vpp=12.5V20.3V) Parameter Symbol Test Condition min. typ. max. Unit Input Leakage Current Thr Vin = 6.25V/0.45V | - - 2 BA Output Low Voltage During Verify VoL lo, = 2.1 mA - - 0.45 v Output High Voltage During Verify Von Tou = ~400 HA 2.4 - - Vv Voc Current (Active) Iec2 - - 30 mA Input Low Level Vin -0.15| - 0.8 v Input High Level Vig 2.2 - Voct0.56| Vv Vpp Supply Current Ipp2 CE = Vy, - - 40 mA Notes)*1. Vcc must be applied before Vpp and removed after Vpp. *2, Vpp must not exceed 14V including overshoot. #3. An influence may be had upon device reliability if the device is installed or removed while Vpp = 12.5V. *4, Do not alter Vpp either Vyy, to 12.8V or 12.5V to Vzz when CE = Low. *5, ~0.6V for pulse width S 20ns. *6. If Vzpy is over the specified maximum value, programming operation cannot be guaranteed. AC PROGRAMMING CHARACTERISTICS (Ta=25C#5C, Vcc=6V+0.25V, V pp=12.5V40.3V) Parameter Symbol Test Condition min, typ. max. Unit Address Setup Time - ; tas 2 - - us OE Setup Time toes 2 - - us Data Setup Time tps 2 - - us Address Hold Time tan 0 - - us Data Hold Time toy 2 - - us OE to Output Float Delay tor 0 - 130 ns Vpp Setup Time tvps 2 - - us Vcc Setup Time tvcs 2 - - us CE Pulse Width During Initial Programming tpy 0.95 1.0 1.05 ms CE Pulse Width During Overprogramming topw 2.85 - 78.75 ms Data Valid from OE tog 0 - 150 ns Notes: fopwy is defined-as mentioned in flow chart. tpr defines the time at which the output achieves the open circuit condition and data is no longer driven. @ SWITCHING CHARACTERISTICS Test Condition Input putse fevel: 0.45V to 2.4V Input rise and fall time: & 20ns Reference level for measuring time: 0.8V and 2V @ ERASE : : Erasure of HN27C256G is performed by exposure to ultraviolet light of 2537 A and all the output data are changed to '1" after this erasure procedure. The minimum integrated dose (i.e. UV intensity x exposure time) for erasure is 15W. sec/cm? @ HITACHI 556 Hitachi America Ltd. 2210 O'Toole Ave. * San Jose, CA 95131 (408) 435-8300HITACHI/ LOGIC/ARRAYS/MEM O04 pel 44U96L203 OO13054 & i 4496203 HITACHI/ LOGIC/ARRAYS/MEM O04E 13054 OD - HN27C256G Series | @ HN27C256G IDENTIFIER CODES / SOUP 2 Pins Ay . 6 oO, Oo, '. oO, oO, 0, Hex Identifier - (10) 9) _ (8) (17) (16) q15) (13) (12) (11) Data Manufacturer Code | Vy7z 0 0 0 0 0 i 1 1 07 Device Code Vin 1 0 1 1 0 0 0 0 BO Notes: 1, A, =12.0V 4 0.5V. - 2, Ay ~ Ag, Aig Ay, CE, OE = Voz. ; SUPPLY CURRENT VS. SUPPLY VOLTAGE SUPPLY CURRENT VS. AMBIENT TEMPERATURE 16 16 Vec=5.0V . Va Vec/Vss Ta=25t i J=5MHz 14+ Va= Vec/s _ | oa i i i i 12 LO 2 @ : = a & g 2 0 i to E Pp o t og a. ! a i ar a4 26 60 cy Supply Voltage vee (V) Ambient Temperature Ta (TC) SUPPLY CURRENT VS. FREQUENCY ACCESS TIME VS. LOAD CAPACITANCE 10 18 Vee=5V Te=2C e Vax Vee/Vss 1a = / 3 Lo j 2 LZ. i a ae E Va S a g Lo g 12 a a i Tees ? 05 j 10 02 08. ae os 10 1 ae 200 4 Oo 300 * Frequency f (MHz) Load Capacitance Cz (pF) HITACHI Hitachi America Ltd. 2210 O'Toole Ave. * San Jose, CA 95131 (408) 435-8300 557 ee eee em pee ree eeHITACHI/ LOGIC/ARRAYS/MEM O4 a | 4W4y94203 0013055 4 IL 4496203 HITACHI/ LOGIC/ARRAYS/MEM O4E 13055 D-_ HN27C256G Series ACCESS TIME VS. SUPPLY VOLTAGE 13 Te=25T 1p i ut g is j **f < oA nz A 3 50 55 60 Supply Voltage Vee (V) OUTPUT CURRENT VS. OUTPUT VOLTAGE Ta=25C Vee=SV | oN | IAN . N Ourput Corrent Jow (Normalized) > 02 Output Voltage Vow (V) STANDBY CURRENT VS, AMBIENT TEMPERATURE T= O13 29 ACCESS TIME VS. AMBIENT TEMPERATURE Yees5.0V A a Access Time tacc.tce (Normalized) 08 07 J 2 0 7) & Ambient Temperature Ts (T) OUTPUT CURRENT VS. OUTPUT VOLTAGE L. [ To=3T Vee=SV Output Current for, (Normalized) 06 o4 0 Output Voltage Vou (V} STANDBY CURRENT VS. SUPPLY VOLTAGE Tae25C , =SV CE= Vee Dark Dark Condition rv 4 3 j E 10 j i 08 a 06 Ambient Temperature Ta (T) Supply Vokage Vee (V) @ HITACHI 558 Hitachi America Ltd. 2210 O'Toole Ave. San Jose, CA 95131 (408) 435-8300