AP01L60T RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D Fast Switching Characteristics Simple Drive Requirement BVDSS 600V RDS(ON) 12 ID G 160mA S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-92 package is widely used for all commercial-industrial applications. TO-92 G D S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 V ID@TA=25 Continuous Drain Current, V GS @ 10V 160 mA ID@TA=100 Continuous Drain Current, V GS @ 10V 100 mA 300 mA 0.83 W 1 IDM Pulsed Drain Current PD@TA=25 Total Power Dissipation TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value Unit 150 /W 1 200810225 AP01L60T Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 600 - - V - 0.8 - V/ VGS=10V, ID=0.5A - - 12 BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA 2 Max. Units RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=0.5A - 0.8 - S IDSS Drain-Source Leakage Current VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (T j=150 C) VDS=480V, VGS=0V - - 100 uA Gate-Source Leakage VGS=30V - - 100 nA ID=100mA - 7 11 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=480V - 1.4 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 3.4 - nC 2 td(on) Turn-on Delay Time VDD=300V - 8 - ns tr Rise Time ID=1A - 5 - ns td(off) Turn-off Delay Time RG=10,VGS=10V - 13 - ns tf Fall Time RD=300 - 9 - ns Ciss Input Capacitance VGS=0V - 260 420 pF Coss Output Capacitance VDS=25V - 20 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 3 - pF Rg Gate Resistance f=1.0MHz - 3 - Min. Typ. IS=160mA, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=1A, VGS=0V, - 345 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 1 - C Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP01L60T 1.5 1.00 10V 6.0V 5.5V 5.0V ID , Drain Current (A) T A =25 C 1.0 V G =4.0V 0.5 10V 5.0V o T A =150 C ID , Drain Current (A) o 0.75 4.5V 0.50 V G =4.0V 0.25 0.0 0.00 0 12 24 36 0 20 30 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 40 3.0 I D =0.5A V G =10V 2.4 1.1 Normalized RDS(ON) Normalized BVDSS (V) 10 V DS , Drain-to-Source Voltage (V) 1 1.8 1.2 0.9 0.6 0.0 0.8 -50 0 50 100 -50 150 o 0 50 100 150 T j , Junction Temperature ( o C ) T j , Junction Temperature ( C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 10 3.6 3.2 IS (A) VGS(th) (V) 1 T j = 150 o C T j = 25 o C 2.8 2.4 0.1 2 1.6 0.01 0 0.4 0.8 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP01L60T I D = 100m A V DS = 480 V 12 C iss 100 9 C (pF) VGS , Gate to Source Voltage (V) f=1.0MHz 1000 15 6 C oss 10 C rss 3 1 0 0 1 2 3 4 5 6 7 8 9 1 5 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 0.20 1.2 0.15 0.8 PD (W) ID , Drain Current (A) 9 V DS , Drain-to-Source Voltage (V) 0.10 0.4 0.05 0.00 0 25 50 75 100 125 T A , Case Temperature ( o 150 25 50 100 125 150 o C) Fig 9. Maximum Drain Current v.s. 75 T A , Case Temperature( C) Fig 10. Typical Power Dissipation Case Temperature VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4