Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low Gate Charge BVDSS 600V
▼ Fast Switching Characteristics RDS(ON) 12Ω
▼ Simple Drive Requirement ID160mA
Description
Absolute Maximum Ratings
Symbol Units
VDS Drain-Source Voltage V
VGS Gate-Source Voltage V
ID@TA=25℃Continuous Drain Current, VGS @ 10V mA
ID@TA=100℃Continuous Drain Current, VGS @ 10V mA
IDM Pulsed Drain Current1mA
PD@TA=25℃Total Power Dissipation W
TSTG ℃
TJOperating Junction Temperature Range ℃
Thermal Data
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient 150 ℃/W
Data & specifications subject to change without notice 1
200810225
Storage Temperature Range -55 to 150
Parameter
300
0.83
-55 to 150
100
Parameter Rating
600
±30
160
RoHS-compliant Product
AP01L60T
G
D
S
TO-92
G
DS
A
dvanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The TO-92 package is widely used for all commercial-industrial
applications.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 600 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.8 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=0.5A - - 12 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=0.5A - 0.8 - S
IDSS Drain-Source Leakage Current VDS=600V, VGS=0V - - 10 uA
Drain-Source Leakage Current (Tj=150oC) VDS=480V, VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS=±30V - - ±100 nA
QgTotal Gate Charge2ID=100mA - 7 11 nC
Qgs Gate-Source Charge VDS=480V - 1.4 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 3.4 - nC
td(on) Turn-on Delay Time2VDD=300V - 8 - ns
trRise Time ID=1A - 5 - ns
td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 13 - ns
tfFall Time RD=300Ω-9 -ns
Ciss Input Capacitance VGS=0V - 260 420 pF
Coss Output Capacitance VDS=25V - 20 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 3 - pF
RgGate Resistance f=1.0MHz - 3 - Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=160mA, VGS=0V - - 1.2 V
trr Reverse Recovery Time2IS=1A, VGS=0V, - 345 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 1 - µC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP01L60T
AP01L60
T
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0.0
0.6
1.2
1.8
2.4
3.0
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normalized RDS(ON)
ID=0.5A
VG=10V
0.0
0.5
1.0
1.5
0 122436
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC
10V
6.0V
5.5V
5.0V
VG=4.0V
0.00
0.25
0.50
0.75
1.00
0 10203040
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150oC 10V
5.0V
4.5V
VG=4.0V
0.01
0.1
1
10
0 0.4 0.8 1.2
VSD , Source-to-Drain Voltage (V)
IS (A)
Tj = 150oCT
j = 25oC
1.6
2
2.4
2.8
3.2
3.6
-50 0 50 100 150
Tj , Junction Temperature ( o C )
VGS(th) (V)
0.8
0.9
1
1.1
1.2
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized BVDSS (V)
AP01L60
T
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Drain Current v.s. Fig 10. Typical Power Dissipation
Case Temperature
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
10V
QGS QGD
QG
Charge
1
10
100
1000
1 5 9 1317212529
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0
3
6
9
12
15
0123456789
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
ID=100mA
VDS =480V
0.00
0.05
0.10
0.15
0.20
25 50 75 100 125 150
TA , Case Temperature ( oC )
ID , Drain Current (A)
0
0.4
0.8
1.2
25 50 75 100 125 150
TA , Case Temperature( oC)
PD (W)
