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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. MJE180/181/182 MJE180/181/182 Low Power Audio Amplifier Low Current High Speed Switching Applications TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : MJE180 : MJE181 : MJE182 Value 60 80 100 Units V V V 40 60 80 V V V VCEO Collector-Emitter Voltage : MJE180 : MJE181 : MJE182 VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 3 A ICP Collector Current (Pulse) 6 A IB Base Current 1 A PC Collector Dissipation (Ta=25C) 1.5 W PC Collector Dissipation (TC=25C) 12.5 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol BVCEO Parameter Collector -Emitter Breakdown Voltage : MJE180 : MJE181 : MJE182 Test Condition IC = 10mA, IB = 0 ICBO Collector Cut-off Current : MJE180 : MJE181 : MJE182 : MJE180 : MJE181 : MJE182 VCB = 60V, IB = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 VCB = 60V, IE = 0 @ TC = 150C VCB = 80V, IE = 0 @ TC = 150C VCB = 100V, IE = 0 @ TC = 150C Min. Max. 40 60 80 Units V V V 0.1 0.1 0.1 0.1 0.1 0.1 A A A mA mA mA 0.1 A IEBO Emitter Cut-off Current VBE = 7V, IC = 0 hFE DC Current Gain VCE = 1V, IC = 100mA VCE = 1V, IC = 500mA VCE = 1V, IC = 1.5A VCE(sat) Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA IC = 1.5A, IB = 150mA IC = 3A, IB = 600mA 0.3 0.9 1.7 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 1.5A, IB = 150mA IC = 3A, IB = 600mA 1.5 2.0 V V VBE(on) Base-Emitter ON Voltage VCE = 1V, IC = 500mA fT Current Gain Bandwidth Product VCE = 10V, IC = 100mA Cob Output Capacitance VCB = 10V, IE = 0, f = 0.1MHz (c)2001 Fairchild Semiconductor Corporation 50 30 12 250 1.2 50 V MHz 30 pF Rev. A1, February 2001 MJE180/181/182 Typical Characteristics 1000 5 IB = 180mA IB = 160mA IB = 140mA IB = 120mA IB = 100mA IB = 80mA IB = 60mA IB = 40mA 4 3 2 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT IB=200mA IB = 20mA 1 100 V CE = 5V V CE=1V 10 1 0 0 1 2 3 4 5 6 7 8 9 10 10 100 VCE [V], COLLECTOR-EMITTER VOLTAGE 10000 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 1000 IC = 10IB 1 f=0.1MHZ IE=0 Cob[pF], CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 VBE(sat) V CE(sat) 0.1 0.01 0.01 0.1 100 10 1 0.1 1 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 16 10 ICMAX.(Pulse) 14 ed S/ B Li m ite d VCE MAX. MJE182 MJE181 MJE180 0.1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area (c)2001 Fairchild Semiconductor Corporation 12 10 8 6 4 2 0 0.01 1 PC[W], POWER DISSIPATION imit s s 5m ipati on L 0 Diss 1 10 IC[A], COLLECTOR CURRENT s 0 50 IC MAX.(DC) 100 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A1, February 2001 MJE180/181/182 Package Demensions 8.00 0.30 11.00 o3.20 0.10 0.20 3.25 0.20 14.20MAX 3.90 0.10 TO-126 (1.00) (0.50) 0.75 0.10 #1 2.28TYP [2.280.20] 2.28TYP [2.280.20] 16.10 0.30 13.06 0.75 0.10 0.20 1.75 0.20 1.60 0.10 +0.10 0.50 -0.05 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A1, February 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM LILENT SWITCHER(R) SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM VCXTM UHCTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. 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