BIPOLARICS, INC. Part Number B12V105 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: * High Gain Bandwidth Product f = 10 GHz typ @ I C = 10 mA t * DESCRIPTION AND APPLICATIONS: Bipolarics' B12V105 is a high performance silicon bipolar transistor intended for use in low noise application at VHF, UHF and microwave frequencies. High performance low noise performance can be realized at 2 mA or less making the B12V105 an excellent choice for battery applications. From 10 mA to greater than 25 mA, ft is nominally 10 GHz. Maximum recommended continuous current is 40 mA. A broad range of packages are offered including SOT-23, SOT143, plastic and ceramic 0.085" Micro-X, 0.070" Stripline and unencapsulated dice. Low Noise Figure 1.6 dB typ at 1 GHz 2.0 dB typ at 2 GHz * High Gain |S21| 2 = 18.1 dB @ 1 GHz 12.8 dB @ 2 GHz * Absolute Maximum Ratings: SYMBOL Dice, Plastic, Hermetic and Surface Mount packages available PERFORMANCE DATA: * Electrical Characteristics (TA = 25oC) SYMBOL PARAMETERS VCBO Collector-Base Voltage VCEO VEBO IC CONT T J TSTG Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature PARAMETERS & CONDITIONS UNIT MIN. RATING UNITS 20 V 12 1.5 40 200 -65 to 150 V V mA o C o C TYP. MAX. VCE =8V, I C = 10 mA unless stated f t Gain Bandwidth Product GHz 10 |S 21 | 2 Insertion Power Gain: P1d B Power output at 1dB compression: f = 1.0 GHz dBm 12 G1d B Gain at 1dB compression: f = 1.0 GHz dBm 15 NF Noise Figure: VCE =8V, I C = 2mA f = 1.0 GHz ZS = 50 dB 1.6 hFE Forward Current Transfer Ratio: VCE = 8V, IC = 10 mA f = 1MHz ICBO IEBO C CB f = 1.0 GHz, I C = 10 mA I C = 25 mA f = 2.0 GHz, I C = 10 mA IC = 25 mA Collector Cutoff Current : VCB =8V Emitter Cutoff Current : VEB =1V Collector Base Capacitance: VCB = 8V f = 1MHz 17.5 18.1 12.8 12.6 50 100 250 A 0.2 A 1.0 pF 0.11 PAGE 2 BIPOLARICS, INC. Part Number B12V105 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET TYPICAL S PARAMETERS: BIAS CONDITION: S-MATRIX: V CE = 5 V, IC = Z S = 50.0 + J 0.0 2 mA Z L = 50.0 + J 0.0 (NOTE: S-Parameters were taken in a ceramic Micro-X package; See package outline 35) FREQ. S11 S21 S12 S22 S21 GHz dB 0.20000 0.40000 0.60000 0.80000 1.00000 1.20000 1.40000 1.60000 1.80000 2.00000 2.20000 2.40000 2.60000 2.80000 3.00000 3.20000 3.40000 3.60000 3.80000 4.00000 4.20000 Mag 0.8709 0.8511 0.8128 0.7762 0.7244 0.6760 0.6309 0.5888 0.5754 0.5623 0.5370 0.5248 0.5370 0.5128 0.5069 0.4954 0.5011 0.5128 0.5432 0.5308 0.5188 Ang -19 -32 -45 -55 -68 -80 -100 -114 -124 -137 -144 -165 -174 178 173 166 162 153 152 152 144 5.888 4.623 4.027 3.388 3.273 3.162 3.235 3.019 2.786 2.722 2.691 2.317 2.264 2.187 1.949 1.883 1.737 1.717 1.566 1.479 1.445 Mag Ang 172 157 142 137 126 122 116 106 102 88 82 86 84 78 78 73 70 69 63 64 58 0.0316 0.0478 0.0660 0.0776 0.0876 0.0933 0.1035 0.1071 0.1096 0.1148 0.1174 0.1188 0.1216 0.1244 0.1258 0.1303 0.1333 0.1348 0.1333 0.1348 0.1380 Mag Ang 80 76 61 59 53 51 48 47 46 46 45 46 48 49 50 51 53 55 57 60 61 0.9549 0.9120 0.8511 0.8511 0.7161 0.6998 0.6531 0.6165 0.6456 0.6025 0.5888 0.5370 0.5308 0.5188 0.4897 0.5011 0.4677 0.4773 0.4773 0.4677 0.5069 Mag Ang -10 -17 -25 -32 -34 -37 -47 -49 -51 -54 -57 -63 -64 -70 -72 -78 -81 -87 -96 -93 -102 15.4 13.3 12.1 10.6 10.3 10.0 10.2 9.6 8.9 8.7 8.6 7.3 7.1 6.8 5.8 5.5 4.8 4.7 3.9 3.4 3.2 PAGE 3 BIPOLARICS, INC. Part Number B12V105 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET TYPICAL S PARAMETERS: BIAS CONDITION: S-MATRIX: V CE = 5 V, IC = Z S = 50.0 + J 0.0 5 mA Z L = 50.0 + J 0.0 (NOTE: S-Parameters were taken in a ceramic Micro-X package; See package outline 35, 36) FREQ. S11 S21 S12 S22 S21 GHz dB 0.20000 0.40000 0.60000 0.80000 1.00000 1.20000 1.40000 1.60000 1.80000 2.00000 2.20000 2.40000 2.60000 2.80000 3.00000 3.20000 3.40000 3.60000 3.80000 4.00000 4.20000 Mag 0.7762 0.7885 0.6382 0.6165 0.5248 0.4677 0.4168 0.3672 0.3548 0.3467 0.3548 0.3235 0.3672 0.3801 0.3935 0.4120 0.4216 0.4786 0.4731 0.4841 0.5495 Ang -24 -44 -60 -72 -88 -102 -124 -138 -146 -158 -176 171 163 157 153 146 142 135 132 131 128 12.02 10.47 8.810 7.244 6.456 6.025 5.188 4.677 4.168 3.901 3.801 3.388 3.273 3.019 2.818 2.722 2.570 2.511 2.290 2.187 2.162 Mag Ang 151 134 106 80 72 57 44 30 20 9 -4 -17 -27 -39 -49 -60 -70 -82 -92 -101 -112 0.0223 0.0398 0.0512 0.0568 0.0616 0.0691 0.0776 0.0822 0.0860 0.0954 0.1047 0.1071 0.1122 0.1174 0.1230 0.1318 0.1348 0.1380 0.1412 0.1445 0.1548 Mag Ang 74 72 60 59 57 57 57 57 58 59 60 62 63 63 64 65 65 67 69 70 68 0.9225 0.8709 0.7413 0.7079 0.6095 0.5559 0.5495 0.5128 0.5069 0.4677 0.4570 0.4216 0.4315 0.4265 0.4168 0.4073 0.3890 0.3890 0.3981 0.3870 0.3801 Mag Ang -14 -25 -31 -36 -38 -40 -48 -46 -50 -52 -58 -60 -62 -67 -70 -75 -79 -83 -86 -88 -99 21.6 20.4 18.9 17.2 16.2 15.6 14.3 13.4 12.4 12.0 11.6 10.6 10.3 9.6 9.0 8.7 8.2 8.0 7.2 6.8 6.7 PAGE 4 BIPOLARICS, INC. Part Number B12V105 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET TYPICAL S PARAMETERS: BIAS CONDITION: S-MATRIX: V CE = 8 V, IC = Z S = 50.0 + J 0.0 10 mA Z L = 50.0 + J 0.0 (NOTE: S-Parameters were taken in a ceramic Micro-X package; See package outline 35, 36) FREQ. S11 S21 S12 S22 S21 GHz 0.20000 0.40000 0.60000 0.80000 1.00000 1.20000 1.40000 1.60000 1.80000 2.00000 2.20000 2.40000 2.60000 2.80000 3.00000 3.20000 3.40000 3.60000 3.80000 4.00000 4.20000 Mag Ang Mag Ang Mag Ang Mag Ang dB 0.6025 0.5888 0.4954 0.4786 0.4265 0.4027 0.4027 0.3935 0.3890 0.3890 0.4216 0.4168 0.4623 0.4786 0.4897 0.4841 0.4954 0.5495 0.5754 0.5821 0.5888 -46 -78 -109 -122 -136 -151 -168 -180 176 170 158 149 145 140 138 133 128 123 121 120 117 15.84 14.12 11.09 9.332 7.498 6.456 6.025 5.308 4.897 4.518 4.365 3.890 3.715 3.388 3.198 3.019 2.818 2.660 2.371 2.137 2.018 160 144 124 118 109 102 99 94 90 85 82 79 77 74 74 71 67 66 62 62 58 0.0177 0.0301 0.0407 0.0457 0.0506 0.0537 0.0616 0.0676 0.0707 0.0741 0.0803 0.0812 0.0912 0.0933 0.1000 0.1059 0.1011 0.1188 0.1188 0.1230 0.1318 70 65 56 58 58 60 62 62 64 66 65 67 69 68 71 70 72 72 72 76 74 0.8912 0.7762 0.6309 0.6095 0.5128 0.5248 0.4677 0.4315 0.4415 0.4027 0.4120 0.3758 0.3845 0.3672 0.3758 0.3880 0.3630 0.3935 0.3548 0.3890 0.3548 -17 -30 -36 -40 -39 -42 -49 -50 -52 -53 -58 -62 -64 -70 -71 -76 -75 -84 -90 -86 -94 24.0 23.0 20.9 19.4 17.5 16.2 15.6 14.5 13.8 13.1 12.8 11.8 11.4 10.6 10.1 9.6 9.0 8.5 7.5 6.6 6.1 PAGE 5 BIPOLARICS, INC. Part Number B12V105 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET TYPICAL S BIAS CONDITION: S-MATRIX: PARAMETERS: V CE = 8 V, IC = Z S = 50.0 + J 0.0 25 mA Z L = 50.0 + J 0.0 (NOTE: S-Parameters were taken in a ceramic Micro-X package; See package outline 35, 36) FREQ. S11 S21 S12 S22 S21 GHz Mag Ang Mag Ang Mag Ang Mag Ang dB 0.20000 0.40000 0.60000 0.80000 1.00000 1.20000 1.40000 1.60000 1.80000 2.00000 2.20000 2.40000 2.60000 2.80000 3.00000 3.20000 3.40000 3.60000 3.80000 4.00000 4.20000 0.4466 0.4265 0.3715 0.3672 0.3467 0.3019 0.3311 0.3801 0.4027 0.4120 0.4365 0.4315 0.4731 0.4897 0.4786 0.4954 0.5308 0.5559 0.5432 0.5370 0.5623 -55 -98 -127 -140 -145 -158 -165 -172 -176 168 157 149 146 141 141 137 134 128 128 129 125 17.78 14.62 12.44 9.855 8.035 7.244 6.025 5.308 4.677 4.265 4.027 3.672 3.467 3.235 3.019 2.804 2.732 2.630 2.398 2.364 2.137 154 136 116 105 102 96 93 88 86 84 80 77 76 73 73 70 68 65 64 64 61 0.0149 0.0234 0.0301 0.0342 0.0407 0.0467 0.0543 0.0638 0.0645 0.0699 0.0785 0.0915 0.0891 0.0933 0.1000 0.1071 0.1109 0.1202 0.1206 0.1258 0.1348 56 62 64 68 69 71 72 72 74 76 77 77 78 78 80 80 79 80 79 81 80 0.7585 0.6456 0.5069 0.5011 0.4466 0.4786 0.4027 0.3715 0.3630 0.3630 0.3548 0.3273 0.3235 0.3162 0.3198 0.3198 0.2951 0.3162 0.2851 0.3162 0.3162 -22 -34 -33 -36 -33 -34 -43 -41 -46 -47 -53 -57 -61 -67 -69 -74 -76 -82 -94 -91 -90 25.0 23.3 21.9 19.9 18.1 17.2 15.6 14.5 13.4 12.6 12.1 11.3 10.8 10.2 9.6 9.2 8.7 8.4 7.6 7.1 6.6 PAGE 6 BIPOLARICS, INC. Part Number B12V105 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR 04 Package: 0.145" Plastic Macro-X 86 Package: 0.085" Plastic Micro-X, Surface Mount 0.02 .51 1 2 4 0.032+0.015 2.34+0.38 0.106+0.015 2.67+0.38 3 .020+.010 0.51+.25 0.008+0.002 0.203+0.051 0.026+0.001 0.66+0.13 0.085+0.005 2.16+0.13 85 Package: 0.085" Plastic Micro-X 87 Package: 0.085" Plastic Micro-X, Short Lead .020 .51 4 1 3 2 .60+0.10 1.52+.26 .065 2.15 .008+.002 .20+.050 5 .020 .51 .215+.010 5.46+.25 0.060+0.01 1.52+0.25 PAGE 7 BIPOLARICS, INC. Part Number B12V105 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR 02 Package: SOT-23 02J Package: SOT-23J 0.30 0.51 1.39 1.57 0.45 0.60 2.25 2.75 0.95 1.90 2.65 3.04 0.00 0.10 0.79 1.1 0.10 0.45 0.60 14 Package: SOT-143 92 Package: TO-92 PAGE 8 BIPOLARICS, INC. Part Number B12V105 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR ORDERING INFORMATION: P/N Including Pkg 85 Package: Micro-X 0.085" Ceramic Temp Range/App B12V105 00 B12V105 02 B12V105 14 B12V105 35 B12V105 92 -55 to +125C -40 to +85C -40 to +85C -55 to +125C -40 to +85C NOTES: (unless otherwise specified) in 1. Dimensions are (mm) 2. Tolerances: in .xxx = .005 mm .xx = .13 3. All dimensions nominal; subject to change without notice LEAD 14, 85, 86, 87, 35 & 04 Packages 1 Base 2 Emitter 3 4 Collector Emitter BIPOLARICS, INC. 46766 Lakeview Blvd. Fremont, CA 94538 Phone: (510) 226-6565 FAX: (510) 226-6765