FEATURES:
• High Gain Bandwidth Product
ft = 10 GHz typ @ IC = 10 mA
• Low Noise Figure
1.6 dB typ at 1 GHz
2.0 dB typ at 2 GHz
• High Gain
|S21|2 = 18.1 dB @ 1 GHz
12.8 dB @ 2 GHz
• Dice, Plastic, Hermetic and Surface
Mount packages available
PERFORMANCE DATA:
• Electrical Characteristics (T A = 25oC)
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
BIPOLARICS, INC. Part Number B12V105
SYMBOL PARAMETERS & CONDITIONS UNIT MIN. TYP. MAX.
VCE =8V, IC = 10 mA unless stated
VCBO Collector-Base Voltage 20 V
VCEO Collector-Emitter Voltage 12 V
VEBO Emitter-Base Voltage 1.5 V
IC CONT Collector Current 40 mA
TJ Junction Temperature 200 oC
TSTG Storage Temperature -65 to 150 oC
SYMBOL PARAMETERS RATING UNITS
Absolute Maximum Ratings:
Insertion Power Gain: f = 1.0 GHz, IC = 10 mA 17.5
IC = 25 mA 18.1
f = 2.0 GHz, IC = 10 mA 12.8
IC = 25 mA 12.6
NF Noise Figure: VCE =8V, IC = 2mA f = 1.0 GHz dB 1.6
ZS = 50Ω
CCB Collector Base Capacitance: VCB = 8V f = 1MHz pF 0.11
ICBO Collector Cutoff Current : VCB =8V µA 0.2
VCE = 8V, IC = 10 mA
ft
|S21 | 2
Gain Bandwidth Product GHz 10
P1dB Power output at 1dB compression: f = 1.0 GHz dBm 12
G1dB Gain at 1dB compression: f = 1.0 GHz dBm 15
hFE Forward Current Transfer Ratio: f = 1MHz 50 100 250
IEBO Emitter Cutoff Current : VEB =1V µA 1.0
DESCRIPTION AND APPLICATIONS:
Bipolarics' B12V105 is a high performance silicon bipolar
transistor intended for use in low noise application at VHF,
UHF and microwave frequencies. High performance low
noise performance can be realized at 2 mA or less making the
B12V105 an excellent choice for battery applications. From
10 mA to greater than 25 mA, ft is nominally 10 GHz.
Maximum recommended continuous current is 40 mA. A
broad range of packages are offered including SOT-23, SOT-
143, plastic and ceramic 0.085" Micro-X, 0.070" Stripline and
unencapsulated dice.