2N5638 2N5639 2N5640 I N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS . . . depletion mode (Type A) Junction Field-Effect designed for chopper and high-speed switching @ Low Drain-Source "ON" rds(o") = Resistance Transistors applications. -- 30 Ohms (2 N5638) 60 Ohms (2 N5639) 100 Ohms (2 N5640) @ Low "Reverse Transfer Crss= 4.0 pF (Max) MAXIMUM 0 Capacitance @f= -- 1.0 MHz RATINGS Rating Drain-Source * Forward Symbol Vnc Voltaae * Reverse Gate-Source *Total Voltage v&~:<J Device Dissipation Temperature ,,.;i"" I s.-.,~. ,, $alue Unit y~?. `" 30 Vdc 2.82 mW/C `+,. I &\:~:g&:, "" Gate Current @ TA = 25C Derate above 25C *Storage .,<( ,, `$<*,:*D .,4 ~,;,<,: y `.:, -$~,,t'~ ... ,$,<., ,< ,,4<. .). :, ,. .,:, ~ Range I ~,>,.l \;$. ....,!:(.? 1 $/<.~,s/ .. I1 OPeratin~J~nction Tem~erature R~ge%'"' ,$,.., Tstg -65 to+150 Oc T.I -65 to+135 Oc U.Ulb 0.019 OIA HOLE(TYP) `4 + OUTPUT * 10% LJI u I ,,. ,... *ELECTRICAL ,... ... CHARACTERISTICS (TA = 25C ., unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)GSS 30 -- Vdc OFF CHARACTERISTICS Gate-Source Breakdown (IG = 10pAdc, Voltage VDS=O) Gate Reverse Current (VGS = -15 Vdc, VDS = 0} -- 1.0 (VGS = -15 Vdc, VDS = O, TA = 100C) -- 1.0 Drain Cutoff Current lD(off) -- 2N5638 (VDS = 15 Vdc, VGS = -12 Vdc) VGS = -8.0 Vdc) 2N5639 -- (VDS = 15 Vdc, VGS = -6.0 Vdc) 2N5640 -- (VDS = 15 Vdc, ,3!. "$$ic, ..~*~:;*:..\,*.i\l ..:+J,V J$a~"%>* IGSS (VDS = 15 Vdc, VGS = -12 Vdc, TA = 100C) (VDS = 15 Vdc, VGS = -8.0 Vdc, TA = 100C) ~,~if::p ` $i\Jtf< `~~,, w. ,,. .*:.:.$$> , k.:; ;+~ ~Adc .k{"~ .{:$ti~v' -- .:;,, ?,:,~~ ... s:. 1.0 -- ..-Y/:*... >. 2N5638 2N5639 ,,:' " pAdc DN CHARACTERISTICS Zero-Gate Voltage Drain Current (Note 1) [DSS 2N5638 {VDS = 20 Vdc, VGS = O) 2N5639 2N5640 Drain-Source "ON" (ID = 12 mAdc, Voltaga 2N5638 VGS = O) (1D = 6.0 mAdc, VGS = O) 2N5639 (1D = 3.O mAdc, VGS = O) 2N5640 Static Drain-Source (ID= l.OmAdc, "ON" ` .Jpi',;: ...~,.: e ~..s~~trk \),r+. ,.0..,",+,;*,, $.,,...+, !l,>,..,.,, ,,?!\:, 4$ v+($~~,+w ,'y:`.,*[:.i~ `*l*ti, ,tT. ,. a~+.. mAdc -- -- -- 25 5.0 Vdc -- 0.5 -- 0.5 -- 0.5 -- 30 Resistance Ohms VGS=O) -- 60 -- 100 ,el) = 12 mAdc 2N5638 -- 4.0 6.0 mAdc 2N5639 -- 6.0 3.0 mAdc 2N5640 -- 8.0 = 12 mAdc 2N5638 -- 5.0 6.0 mAdc 2N5639 -- 8.0 3.0 mAdc 2N5640 -- 10 lD(On) = 12 mAdc 2N5638 -- 5.0 6.0 mAdc 2N5639 -- 10 3.0 mAdc 2N5640 -- 15 = 12 mAdc 2N5638 6.0 mAdc 3.0 mAdc lD(on) lD(on) ,,, * Indicates JEDEC Registered Note 1. Pulse Test: td(off) -- 10 2N5639 -- 20 2N5640 -- 30, tf .ns .-' ns ns ns Data. Pulse Width< 300 Ms, Duty Cvcle <3.0%. MOTOROLA @ tr 1' iD(on) -- td(gn) OX Semiconductor 209!2 4517PRINTED IN USA6.69 IMPERIAL LITHOu]17M PHOENIX, 15M ARIZONA 8s036 Products . A SUBSIDIARY OF MOTOROLA Inc.-- INC. DS531?