UT54ACS283/UT54ACTS283 Radiation-Hardened 4-Bit Binary Full Adders FEATURES PINOUTS 16-Pin DIP Top View radiation-hardened CMOS - Latchup immune High speed Low power consumption Single 5 volt supply Available QML Q or V processes Flexible package - 16-pin DIP - 16-lead flatpack DESCRIPTION The UT54ACS283 and the UT54ACTS283 are 4-bit binary adders. The adders perform addition of two 4-bit binary words. The sum ( ) outputs are provided for each bit and the resultant carry (C4) is obtained as the fifth bit. The adders feature full internal look-ahead across all four bits for fast carry generation. The devices are characterized over full military temperature range of -55 C to +125 C. LOGIC SYMBOL A1 A2 A3 A4 B1 B2 B3 B4 C0 (5) (3) (14) (12) (6) (2) P (7) Q 3 3 C1 (1) (13) 0 (15) (11) 16 VDD B2 2 15 B3 A2 3 14 A3 1 A1 4 13 5 12 3 A4 B1 6 11 B4 C0 7 10 4 VSS 8 9 C4 1 16 VDD 2 15 B3 A2 3 14 A3 1 A1 4 5 13 12 3 A4 B1 C0 6 11 B4 7 8 10 9 4 C4 2 B2 (4) 0 3 1 16-Lead Flatpack Top View VSS 0 2 C0 (10) 1 2 3 4 (9) C4 Note: 1. Logic symbol in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12. 205 RadHard MSI Logic UT54ACS283/UT54ACTS283 FUNCTION TABLE INPUT OUTPUT When C0 = L A1 A3 B1 B3 A2 A4 B2 B4 1 3 When C2 = L 2 4 C2 C4 When C0 = H 1 3 When C2 = H 2 4 C2 C4 L L L L L L L H L L H L L L H L L L H L L H L L H L L L H L H H L L L H L H H L L L H L L H L H H L H L H L H H L L L H L H H L H H L L L H H H H L L L H H L H L L L H L H L H H L H L L H H H L L L H L H L H H H L L L H H H L H L L H H L H L L H H L L H H L H H L H H H L H L H H L H H H H L H L H H H H H H L H H H H H H = high level, L = low level Note: Input conditions at A1, A2, B1, B2, and C0 are used to determine outputs 1 and 2 and the value of the internal carry C2. The values at C2, A3, B3, A4, and B4 are then used to determine outputs 3, 4, and C4. RadHard MSI Logic 206 UT54ACS283/UT54ACTS283 LOGIC DIAGRAM (9) C4 B4 (11) A4 (12) B3 (15) A3 (14) B2 (2) A2 (3) B1 (6) A1 (5) C0 (7) (10) (13) (1) 207 (4) RadHard MSI Logic UT54ACS283/UT54ACTS283 RADIATION HARDNESS SPECIFICATIONS 1 PARAMETER LIMIT UNITS Total Dose 1.0E6 rads(Si) SEU Threshold 2 80 MeV-cm2/mg SEL Threshold 120 MeV-cm2/mg Neutron Fluence 1.0E14 n/cm2 Notes: 1. Logic will not latchup during radiation exposure within the limits defined in the table. 2. Device storage elements are immune to SEU affects. ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER LIMIT UNITS VDD Supply voltage -0.3 to 7.0 V VI/O Voltage any pin -.3 to VDD +.3 V TSTG Storage Temperature range -65 to +150 C TJ Maximum junction temperature +175 C TLS Lead temperature (soldering 5 seconds) +300 C Thermal resistance junction to case 20 C/W II DC input current 10 mA PD Maximum power dissipation 1 W JC Note: 1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS SYMBOL PARAMETER LIMIT UNITS VDD Supply voltage 4.5 to 5.5 V VIN Input voltage any pin 0 to VDD V TC Temperature range -55 to + 125 C RadHard MSI Logic 208 UT54ACS283/UT54ACTS283 DC ELECTRICAL CHARACTERISTICS 7 (VDD = 5.0V 10%; V SS = 0V 6, -55 C < TC < +125 C) SYMBOL VIL VIH IIN PARAMETER CONDITION MIN Low-level input voltage 1 ACTS ACS High-level input voltage 1 ACTS ACS MAX UNIT 0.8 .3VDD V .5VDD .7VDD V Input leakage current ACTS/ACS VIN = VDD or VSS Low-level output voltage 3 ACTS ACS IOL = 8.0mA IOL = 100 A High-level output voltage 3 ACTS ACS IOH = -8.0mA IOH = -100 A Short-circuit output current 2 ,4 ACTS/ACS VO = VDD and VSS -200 Output current10 VIN = VDD or VSS 8 mA (Sink) VOL = 0.4V Output current10 VIN = VDD or VSS -8 mA (Source) VOH = VDD - 0.4V Ptotal Power dissipation 2, 8, 9 CL = 50pF 1.9 mW/ MHz IDDQ Quiescent Supply Current VDD = 5.5V 10 A Quiescent Supply Current Delta For input under test 1.6 mA VOL VOH IOS IOL IOH IDDQ ACTS -1 1 A 0.40 0.25 V .7VDD VDD - 0.25 V 200 mA VIN = VDD - 2.1V For all other inputs VIN = VDD or VSS VDD = 5.5V CIN COUT 209 Input capacitance 5 = 1MHz @ 0V 15 pF Output capacitance 5 = 1MHz @ 0V 15 pF RadHard MSI Logic UT54ACS283/UT54ACTS283 Notes: 1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V IH = VIH (min) + 20%, - 0%; VIL = VIL(max) + 0%, - 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are guaranteed to VIH(min) and VIL(max). 2. Supplied as a design limit but not guaranteed or tested. 3. Per MIL-PRF-38535, for current density 5.0E5 amps/cm2, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765 pF/MHz. 4. Not more than one output may be shorted at a time for maximum duration of one second. 5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and VSS at frequency of 1MHz and a signal amplitude of 50mV rms maximum. 6. Maximum allowable relative shift equals 50mV. 7. All specifications valid for radiation dose 1E6 rads(Si). 8. Power does not include power contribution of any TTL output sink current. 9. Power dissipation specified per switching output. 10. This value is guaranteed based on characterization data, but not tested. AC ELECTRICAL CHARACTERISTICS 2 (VDD = 5.0V 10%; V SS = 0V 1, -55 C < TC < +125 C) SYMBOL PARAMETER MINIMUM MAXIMUM UNIT tPLH Propagation delay C0 to n 2 16 ns tPHL Propagation delay C0 to n 2 19 ns tPLH Propagation delay C0 to C4 2 16 ns tPHL Propagation delay C0 to C4 2 17 ns tPLH Propagation delay An, Bn to C4 2 16 ns tPHL Propagation delay An, Bn to C4 2 15 ns tPLH Propagation delay An, Bn to n 2 14 ns tPHL Propagation delay An, Bn to n 2 16 ns Notes: 1. Maximum allowable relative shift equals 50mV. 2. All specifications valid for radiation dose 1E6 rads(Si). RadHard MSI Logic 210