205 RadHard MSI Logic
UT54ACS283/UT54ACTS283
Radiation-Hardened
4-Bit Binary Full Adders
FEATURES
radiation-hardened CMOS
- Latchup immune
High speed
Low power consumption
Single 5 volt supply
Available QML Q or V processes
Flexible package
- 16-pin DIP
- 16-lead flatpack
DESCRIPTION
The UT54ACS283 and the UT54ACTS283 are 4-bit binary
adders. The adders perform addition of two 4-bit binary words.
The sum ( ) outputs are provided for each bit and the resultant
carry (C4) is obtained as the fifth bit. The adders feature full
internal look-ahead across all four bits for fast carry generation.
The devices are characterized over full military temperature
range of -55 C to +125 C.
LOGIC SYMBOL
PINOUTS
16-Pin DIP
Top View
16-Lead Flatpack
Top View
0
(1)
Note:
1. Logic symbol in accordance with ANSI/IEEE Std 91-1984 and IEC
Publication 617-12.
(5)
A1 (3)
A2 (14)
A3 (12)
A4 3
(6)
B1 0
(2)
B2 (15)
B3 (11)
B4 3
(7)
C0 C1
(4) 1
P
Q
2
(10)
(13) 3
4
0
3
(9)C4
C0
1
2
3
4
5
7
6
16
15
14
13
12
10
11
B2
A2
1
A1
B1
C0
VDD
B3
A3
3
A4
B4
4
8 9
VSS C4
2
1
2
3
4
5
7
6
16
15
14
13
12
10
11
8 9
B2
A2
1
A1
B1
C0
VSS
2VDD
B3
A3
3
A4
B4
4
C4
RadHard MSI Logic 206
UT54ACS283/UT54ACTS283
FUNCTION TABLE
H = high level, L = low level
Note:
Input conditions at A1, A2, B1, B2, and C0 are used to determine outputs 1 and 2 and the value of the internal carry C2. The values at C2, A3, B3, A4, and
B4 are then used to determine outputs 3, 4, and C4.
INPUT OUTPUT
When C0 = L When C2 = L When C0 = H When C2 = H
A1 A3 B1 B3 A2 A4 B2 B4 1324C2 C4 1324C2 C4
LLLLLLLHL L
HLLLHLLLHL
LHL L HLLLHL
H H LLLHLH H L
L L HL L HLH H L
HLHLH H LLLH
LH H LH H LLLH
HHHLLLH H LH
LLLHLHLH H L
HL L HHHLLLH
LHLHHHLLLH
H H LHL L H H LH
L L H H L L H H LH
HLHHHLHLH H
LHHHHLHLH H
HHHHLHHHHH
207 RadHard MSI Logic
UT54ACS283/UT54ACTS283
LOGIC DIAGRAM
C4
(9)
(10)
(13)
(1)
(4)
(12)
(11)
(15)
(14)
(2)
(3)
(6)
(5)
(7)
B4
A4
B3
A3
B2
A2
B1
A1
C0
RadHard MSI Logic 208
UT54ACS283/UT54ACTS283
RADIATION HARDNESS SPECIFICATIONS 1
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
PARAMETER LIMIT UNITS
Total Dose 1.0E6 rads(Si)
SEU Threshold 280 MeV-cm2/mg
SEL Threshold 120 MeV-cm2/mg
Neutron Fluence 1.0E14 n/cm2
SYMBOL PARAMETER LIMIT UNITS
VDD Supply voltage -0.3 to 7.0 V
VI/O Voltage any pin -.3 to VDD +.3 V
TSTG Storage Temperature range -65 to +150 C
TJMaximum junction temperature +175 C
TLS Lead temperature (soldering 5 seconds) +300 C
JC Thermal resistance junction to case 20 C/W
IIDC input current 10 mA
PDMaximum power dissipation 1W
SYMBOL PARAMETER LIMIT UNITS
VDD Supply voltage 4.5 to 5.5 V
VIN Input voltage any pin 0 to VDD V
TCTemperature range -55 to + 125 C
209 RadHard MSI Logic
UT54ACS283/UT54ACTS283
DC ELECTRICAL CHARACTERISTICS 7
(VDD = 5.0V 10%; VSS = 0V 6, -55 C < TC < +125 C)
SYMBOL PARAMETER CONDITION MIN MAX UNIT
VIL Low-level input voltage 1
ACTS
ACS
0.8
.3VDD
V
VIH High-level input voltage 1
ACTS
ACS
.5VDD
.7VDD
V
IIN Input leakage current
ACTS/ACS VIN = VDD or VSS -1 1A
VOL Low-level output voltage 3
ACTS
ACS IOL = 8.0mA
IOL = 100 A0.40
0.25 V
VOH High-level output voltage 3
ACTS
ACS IOH = -8.0mA
IOH = -100 A.7VDD
VDD - 0.25 V
IOS Short-circuit output current 2 ,4
ACTS/ACS VO = VDD and VSS -200 200 mA
IOL Output current10
(Sink)
VIN = VDD or VSS
VOL = 0.4V
8mA
IOH Output current10
(Source)
VIN = VDD or VSS
VOH = VDD - 0.4V
-8 mA
Ptotal Power dissipation 2, 8, 9 CL = 50pF 1.9 mW/
MHz
IDDQ Quiescent Supply Current VDD = 5.5V 10 A
IDDQ Quiescent Supply Current Delta
ACTS For input under test
VIN = VDD - 2.1V
For all other inputs
VIN = VDD or VSS
VDD = 5.5V
1.6 mA
CIN Input capacitance 5 = 1MHz @ 0V 15 pF
COUT Output capacitance 5 = 1MHz @ 0V 15 pF
RadHard MSI Logic 210
UT54ACS283/UT54ACTS283
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: VIH = VIH(min) + 20%, - 0%; VIL = VIL(max) + 0%,
- 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but
are guaranteed to VIH(min) and VIL(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density 5.0E5 amps/cm2, the maximum product of load capacitance (per output buffer) times frequency should not exceed
3,765 pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and VSS
at frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose 1E6 rads(Si).
8. Power does not include power contribution of any TTL output sink current.
9. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
AC ELECTRICAL CHARACTERISTICS 2
(VDD = 5.0V 10%; VSS = 0V 1, -55 C < TC < +125 C)
Notes:
1. Maximum allowable relative shift equals 50mV.
2. All specifications valid for radiation dose 1E6 rads(Si).
SYMBOL PARAMETER MINIMUM MAXIMUM UNIT
tPLH Propagation delay C0 to n2 16 ns
tPHL Propagation delay C0 to n2 19 ns
tPLH Propagation delay C0 to C4 2 16 ns
tPHL Propagation delay C0 to C4 2 17 ns
tPLH Propagation delay An, Bn to C4 2 16 ns
tPHL Propagation delay An, Bn to C4 2 15 ns
tPLH Propagation delay An, Bn to n2 14 ns
tPHL Propagation delay An, Bn to n2 16 ns
