AUTOMOTIVE GRADE AUIRFR6215 Features Advanced Planar Technology Low On-Resistance P-Channel Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS RDS(on) D-Pak 0.295 -13A D G S D-Pak AUIRFR6215 G Gate D Drain Standard Pack Form Quantity Tube 75 Tape and Reel Left 3000 Package Type AUIRFR6215 max. ID Description Specifically designed for Automotive applications of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Base part number -150V S Source Orderable Part Number AUIRFR6215 AUIRFR6215TRL Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. ID @ TC = 25C Continuous Drain Current, VGS @ -10V -13 ID @ TC = 100C IDM PD @TC = 25C Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipation -9.0 -44 110 VGS EAS IAR EAR dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Symbol RJC RJA RJA Parameter Junction-to-Case Junction-to-Ambient ( PCB Mount) Junction-to-Ambient Units A W 0.71 20 310 -6.6 11 -5.0 -55 to + 175 W/C V mJ A mJ V/ns C 300 Typ. Max. Units --- --- --- 1.4 50 110 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2017-10-05 AUIRFR6215 Static @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions -150 --- --- V VGS = 0V, ID = -250A --- -0.20 --- V/C Reference to 25C, ID = -1mA --- --- 0.295 VGS = -10V, ID = -6.6A --- --- 0.58 VGS = -10V, ID = -6.6A TJ =150C -2.0 --- -4.0 V VDS = VGS, ID = -250A 3.6 --- --- S VDS = -50V, ID = -6.6A --- --- -25 VDS = -150 V, VGS = 0V A --- --- -250 VDS = -120V,VGS = 0V,TJ =150C --- --- -100 VGS = -20V nA --- --- 100 VGS = 20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time --- --- --- --- --- --- --- --- --- --- 14 36 53 37 66 8.1 35 --- --- --- --- LD Internal Drain Inductance --- 4.5 --- LS Internal Source Inductance --- 7.5 --- --- --- --- 860 220 130 --- --- --- Min. Typ. Max. Units --- --- -13 --- --- -44 --- --- --- --- 160 1.2 -1.6 240 1.7 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage Reverse Recovery Time trr Qrr Reverse Recovery Charge Forward Turn-On Time ton ID = -6.6A nC VDS = -120V VGS = -10V, See Fig 6 and 13 VDD = -75V ID = -6.6A ns RG = 6.8 RD = 12See Fig 10 Between lead, 6mm (0.25in.) nH from package and center of die contact VGS = 0V pF VDS = -25V = 1.0MHz, See Fig. 5 Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = -6.6A,VGS = 0V ns TJ = 25C ,IF = -6.6A C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) VDD = -25V, starting TJ = 25C, L = 14mH, RG = 25, IAS = -6.6A. (See Fig.12) ISD -6.6A, di/dt -620A/s, VDD V(BR)DSS, TJ 175C. Pulse width 300s; duty cycle 2%. This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact . Uses IRF6215 data and test conditions. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 Ris measured at TJ approximately 90C. 2 2017-10-05 AUIRFR6215 100 100 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP -ID , Drain-to-Source Current (A) -ID , Drain-to-Source Current (A) TOP 10 20s PULSE WIDTH Tc = 25C A -4.5V 1 1 10 10 -4.5V 1 1 100 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) -ID , Drain-to-Source Current (A) 100 TJ = 25C TJ = 175C 10 VDS = -50V 20s PULSE WIDTH 5 6 7 8 9 -VGS , Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 A 100 Fig. 2 Typical Output Characteristics Fig. 1 Typical Output Characteristics 4 10 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) 1 20s PULSE WIDTH TC = 175C 10 I D = -11A 2.0 1.5 1.0 0.5 VGS = -10V 0.0 A -60 -40 -20 0 20 40 60 A 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig. 4 Normalized On-Resistance vs. Temperature 2017-10-05 AUIRFR6215 20 2000 C, Capacitance (pF) 1600 -V GS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = Cds + C gd Ciss 1200 Coss 800 Crss 400 0 1 10 100 I D = -6.6A 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 20 40 60 80 A Q G , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 10s -I D , Drain Current (A) -ISD , Reverse Drain Current (A) VDS = -120V VDS = -75V VDS = -30V TJ = 175C 10 TJ = 25C 1 100s 10 1ms VGS = 0V 0.1 0.2 0.6 1.0 1.4 -VSD , Source-to-Drain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 4 A 1.8 TC = 25C TJ = 175C Single Pulse 1 1 10ms 10 100 A 1000 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 2017-10-05 AUIRFR6215 14 -ID , Drain Current (A) 12 10 8 6 4 Fig 10a. Switching Time Test Circuit 2 0 25 50 75 100 125 TC , Case Temperature 150 175 ( C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10b. Switching Time Waveforms Thermal Response (ZthJC ) 10 1 D = 0.50 0.20 0.10 0.1 PDM 0.05 t 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 Notes: 1. Duty factor D = t 1 /t 1 t2 2 2. Peak TJ = PDM x Z thJC + T C 0.0001 0.001 0.01 0.1 A 1 t 1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2017-10-05 AUIRFR6215 Fig 12a. Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) 800 TOP BOTTOM ID -2.7A -4.7A -6.6A 600 400 200 0 25 50 75 100 125 150 A 175 Starting TJ , Junction Temperature (C) Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Fig 13a. Gate Charge Waveform 6 Fig 13b. Gate Charge Test Circuit 2017-10-05 AUIRFR6215 Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs 7 2017-10-05 AUIRFR6215 D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches)) D-Pak (TO-252AA) Part Marking Information Part Number AUIRFR6215 YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code 8 2017-10-05 AUIRFR6215 D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. 9 2017-10-05 AUIRFR6215 Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level D-Pak MSL1 Class M4 AEC-Q101-002 Class H3A AEC-Q101-001 Class C5 AEC-Q101-005 Yes Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Highest passing voltage. Revision History Date Comments 10/12/2015 Updated datasheet with corporate template Corrected ordering table on page 1. 10/05/2017 Corrected typo error on part marking on page 8. Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's products and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer's technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies' products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 10 2017-10-05