VS-ETU3006SHM3, VS-ETU3006-1HM3
www.vishay.com Vishay Semiconductors
Revision: 26-Oct-17 1Document Number: 94702
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Rectifier, 30 A FRED Pt®
FEATURES
Low forward voltage drop
Ultrafast recovery time
175 °C operating junction temperature
Low leakage current
AEC-Q101 qualified, meets JESD 201 class 1A whisker
test
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Ultralow VF, soft-switching ultrafast rectifiers optimized for
discontinuous (critical) mode (DCM) power factor correction
(PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
APPLICATIONS
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units, and DVD AC/DC power supplies.
PRIMARY CHARACTERISTICS
Package D2PAK (TO-263AB), TO-262AA
IF(AV) 30 A
VR600 V
VF at IF1.15 V
trr (typ.) 30 ns
TJ max. 175 °C
Circuit configuration Single
TO-262AA
1
2
3
D
2
PAK (TO-263AB)
12
3
N/C Anode
13
2
Anode
13
Base
cathode
2
N/C
VS-ETU3006SHM3VS-ETU3006-1HM3
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Repetitive peak reverse voltage VRRM 600 V
Average rectified forward current IF(AV) TC = 113 °C 30 A
Non-repetitive peak surge current IFSM TC = 25 °C 200
Operating junction and storage temperatures TJ, TStg -65 to +175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
VBR,
VRIR = 100 μA 600 - -
V
Forward voltage VF
IF = 30 A - 1.4 2.0
IF = 30 A, TJ = 150 °C - 1.15 1.35
Reverse leakage current IR
VR = VR rated - 0.02 30 μA
TJ = 150 °C, VR = VR rated - 30 250
Junction capacitance CTVR = 600 V - 20 - pF
Series inductance LSMeasured lead to lead 5 mm from package body - 8.0 - nH
VS-ETU3006SHM3, VS-ETU3006-1HM3
www.vishay.com Vishay Semiconductors
Revision: 26-Oct-17 2Document Number: 94702
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time trr
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V - 30 45
nsTJ = 25 °C
IF = 30 A
dIF/dt = 200 A/μs
VR = 200 V
-45-
TJ = 125 °C - 100 -
Peak recovery current IRRM
TJ = 25 °C - 5.6 - A
TJ = 125 °C - 10 -
Reverse recovery charge Qrr
TJ = 25 °C - 127 - nC
TJ = 125 °C - 580 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range TJ, TStg -65 - 175 °C
Thermal resistance,
junction-to-case RthJC - 0.95 1.4 °C/W
Thermal resistance,
junction-to-ambient RthJA Typical socket mount - - 70
Thermal resistance,
case-to-heatsink RthCS Mounting surface, flat, smooth and
greased -0.5-
Weight -2.0- g
-0.07- oz.
Mounting torque 6
(5) -12
(10)
kgf · cm
(lbf · in)
Marking device Case style D2PAK (TO-263AB) ETU3006SH
Case style TO-262AA ETU3006-1H
VFM - Forward Voltage Drop (V)
IF - Instantaneous Forward Current (A)
0.0 0.5 1.0 1.5 2.0 2.5
1
10
100
1000
TJ = 25 °C
TJ = 150 °C
TJ = 175 °C
V
R
-
Reverse Voltage (V)
I
R
-
Reverse Current (μA)
0 100 200 300 400 500 600
0.001
0.01
0.1
1
10
100
1000
150°C
175°C
25°C
50°C
75°C
125°C
100°C
VS-ETU3006SHM3, VS-ETU3006-1HM3
www.vishay.com Vishay Semiconductors
Revision: 26-Oct-17 3Document Number: 94702
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
V
R
-
Reverse Voltage (V)
C
T
-
Capacitance (pF)
0100 200 300 400 500 600
1
10
100
1000
Thermal Impedance ZthJC (°C/W)
t
1
-
Rectangular Pulse Duration (s)
Z
thJC
-
Thermal Impedance (°C/W)
1E-05 1E-04 1E-03 1E-02 1E-0 1E+00
0.01
0.1
1
10
Single Pulse
(Thermal Resistance)
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
D = 0.01
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
0 5 10 15 20 25 30 35 40 45
90
100
110
120
130
140
150
160
170
180
DC
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0 5 10 15 20 25 30 35 40 45
0
20
10
30
40
50
60
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
RMS Limit
VS-ETU3006SHM3, VS-ETU3006-1HM3
www.vishay.com Vishay Semiconductors
Revision: 26-Oct-17 4Document Number: 94702
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Typical Reverse Recovery vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt
Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
trr (ns)
dIFdt (A/μs)
10
20
30
40
50
60
70
80
90
100
110
120
130
100 1000
I
F = 30 A, 25 °C
typical value
IF = 30 A, 125 °C
t
rr
(nC)
dI
F
dt (A/μs)
200
0
400
600
800
1000
1200
1400
1600
1800
100 1000
IF = 30 A, 125 °C
IF = 30 A, 25 °C
typical value
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dIF/dt
adjust
Q
rr
0.5 I
RRM
di
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
di
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve dened by trr
and IRRM
trr x IRRM
2
Qrr =
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
VS-ETU3006SHM3, VS-ETU3006-1HM3
www.vishay.com Vishay Semiconductors
Revision: 26-Oct-17 5Document Number: 94702
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-ETU3006SHM3 50 1000 Antistatic plastic tube
VS-ETU3006-1HM3 50 1000 Antistatic plastic tube
VS-ETU3006STRRHM3 800 800 13" diameter reel
VS-ETU3006STRLHM3 800 800 13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions D2PAK (TO-263AB) www.vishay.com/doc?95046
TO-262AA www.vishay.com/doc?95419
Part marking information D2PAK (TO-263AB) www.vishay.com/doc?95444
TO-262AA www.vishay.com/doc?95443
Packaging information D2PAK (TO-263AB) www.vishay.com/doc?95032
SPICE model www.vishay.com/doc?96438
2- Circuit conguration
E = single
1-Vishay Semiconductors product
3- T = TO-220
4- U = ultrafast recovery time
5- Current code (30 = 30 A)
6- Voltage code (06 = 600 V)
7-• S = D2PAK (TO-263AB)
- • -1 = TO-262AA
Device code
51 32 4 6
VS- E T U 30 06 S TRL H
789
9
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
8- • None = tube
- • TRL = tape and reel (left oriented, for D2PAK (TO-263AB) package)
- • TRR = tape and reel (right oriented, for D2PAK (TO-263AB) package)
- Environmental digit:
M3
10
10
- H = AEC-Q101 qualied
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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