© 2012 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1000 V
VGSS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C 32 A
IDM TC= 25°C, Pulse Width Limited by TJM 96 A
IATC= 25°C 32A
EAS TC= 25°C2J
dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 50 V/ns
PDTC= 25°C 1250 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-264) 1.13/10 Nm/lb.in.
FCMounting Force (PLUS247) 20..120 /4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 1000 V
VGS(th) VDS = VGS, ID = 8mA 3.5 6.5 V
IGSS VGS = ±30V, VDS = 0V ±200 nA
IDSS VDS = VDSS, VGS = 0V 50 μA
TJ = 125°C 3 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 320 mΩ
HiperFETTM
Power MOSFETs
Q3-Class
IXFK32N100Q3
IXFX32N100Q3
VDSS = 1000V
ID25 = 32A
RDS(on) ≤≤
≤≤
≤ 320mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 300ns
DS100300B(10/12)
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
G = Gate D = Drain
S = Source Tab = Drain
PLUS247 (IXFX)
Tab
G
DS
TO-264 (IXFK)
S
G
D
Tab
Features
zInternational Standard Packages
zLow Intrinsic Gate Resistance
zAvalanche Rated
zLow Package Inductance
zFast Intrinsic Rectifier
zLow RDS(on) and QG
Advantages
zHigh Power Density
zEasy to Mount
zSpace Savings
Applications
zDC-DC Converters
zBattery Chargers
zSwitch-Mode and Resonant-Mode
Power Supplies
zDC Choppers
zTemperature and Lighting Controls
IXFK32N100Q3
IXFX32N100Q3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 20 32 S
Ciss 10990 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 745 pF
Crss 67 pF
RGi Gate Input Resistance 0.20 Ω
td(on) 45 ns
tr 15 ns
td(off) 54 ns
tf 12 ns
Qg(on) 195 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 60 nC
Qgd 78 nC
RthJC 0.10 °C/W
RthCS 0.15 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 32 A
ISM Repetitive, Pulse Width Limited by TJM 128 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr 300 ns
QRM 1.2 μC
IRM 12.3 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
IF = 16A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
Terminals: 1 - Gate
2 - Drain
3 - Source
PLUS 247TM Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain
3 - Source
4 - Drain
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
TO-264 AA Outline
© 2012 IXYS CORPORATION, All Rights Reserved
IXFK32N100Q3
IXFX32N100Q3
Fi g. 1. Ou tp u t C h ar act er i sti cs @ T
J
= 25ºC
0
4
8
12
16
20
24
28
32
01234567891011
V
DS
- Volts
I
D
- Ampere s
V
GS
= 10V
6
V
7
V
8
V
Fi g. 2. Exten d ed Ou tp u t Ch ar acter i s ti cs @ T
J
= 25ºC
0
10
20
30
40
50
60
70
0 5 10 15 20 25 30
V
DS
- Vo lts
I
D
- Amperes
V
GS
= 10V
7
V
6
V
8
V
Fi g . 3. Ou tput Ch ar acter isti cs @ T
J
= 125º C
0
4
8
12
16
20
24
28
32
0 5 10 15 20 25
V
DS
- Volts
I
D
- A mperes
6
V
7V
5V
V
GS
= 10V
Fig. 4. R
DS(on)
No r mali zed to I
D
= 16A Valu e vs.
Junction T emperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normali zed
V
GS
= 10V
I
D
= 32A
I
D
= 16A
Fig. 5. R
DS(on)
Normalized to I
D
= 16A Valu e vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
0102030405060
I
D
- Amp e res
R
DS(on)
- Normali zed
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fi g. 6. Maximu m Dr ain C u r rent vs.
Case Temp er atu re
0
5
10
15
20
25
30
35
-50 -25 0 25 50 75 100 125 150
T
C
- Deg re es Centigrad e
I
D
- Amper es
IXFK32N100Q3
IXFX32N100Q3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Input Admittance
0
5
10
15
20
25
30
35
40
45
50
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
V
GS
- V olts
I
D
- Ampere s
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
0 5 10 15 20 25 30 35 40 45 50 55 60
I
D
- Amp eres
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
10
20
30
40
50
60
70
80
90
100
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
SD
- Vo lts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180 200 220
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 5 00V
I
D
= 16A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Vo lts
Ca pacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. Fo r war d -B i as Safe Op er ati n g Area
0.1
1
10
100
10 100 1,000 10,000
V
DS
- V olts
I
D
- Amperes
T
J
= 1 50ºC
T
C
= 25ºC
Single P ulse
100µs
1ms
R
DS(on)
Limit
© 2012 IXYS CORPORATION, All Rights Reserved IXYS REF: F_32N100Q3(Q8-R44)10-10-12
IXFK32N100Q3
IXFX32N100Q3
Fi g. 13. Maximu m Tr an si en t Th er mal I mp edan ce
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z(th)JC - ºC / W
Fi g . 13. Maximu m Transi en t Ther mal Imp ed an ce
AAAAA
0.2
