cosa hoe eh Ne MITSUBISHI Nch POWER MOSFET FS70VSJ-03 HIGH-SPEED SWITCHING USE FS70VSJ-03 OUTLINE DRAWING Dimensions in mm 4 _ 10.5MAX. \ Penn at 3g \ 3 \ | 8 y a fy : gs 9 2S) * 8 3 g/o| = He tot t APU ' 5 a ot 08 a st enpee = has S H 7 C24 a 1 GATE e4V DRIVE i 2: DRAIN WDVDSS coerce cree erence cece cent e eee n enn ent eete neue . 2) SOURCE Vpss 30V C 4 DRAIN eros (ON) (MAX) ete meets teen teeta 12mQ | WD cece cece eee nee ete e teen nent as eee eee ee etn enas 7OA O38 | Integrated Fast Recovery Diode (TYP.) --:--- 70ns 10-2208 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS (tc = 25C) Symbol Parameter Conditions Ratings Unit Voss Drain-source voltage VGs = OV 30 Vv Vass Gate-source voltage Vos = OV 220 Vv ID Drain current 70 A low Drain current (Pulsed) 280 A IDA Avalanche drain current (Pulsed) | L = 30uH 70 A Is Source current 70 A Ism Source current (Pulsed) 280 A PD Maximum power dissipation 70 Ww Teh Channel temperature ~55 ~ +150 C Tstg Storage temperature 55 ~ +150 C _ Weight Typical value 1.2 g 2-418 MITSUBISHI ELECTRICMITSUBISHI Nch POWER MOSFET FS70VSJ-03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (ich = 25C) Limits Symbol Parameter Test conditions - m Unit Min. Typ. Max. V (BR) OSS | Drain-source breakdown voltage | ID = 1mA, Vps = OV 30 _ Vv lass Gate leakage current Vas = +20V, Vps = OV _ +0.4 pA loss Drain current VDS = 30V, Vas = 0V _ 01 mA VGS (th) Gate-source threshold voitage Jo = 1mA, VDS = 10V 1.0 1.5 2.0 v TDS (ON) | Drain-source on-state resistance | ID = 35A, VGS = 10V ~ 9 12 ma DS (ON) | Drain-source on-state resistance | ID = 35A, Vas = 4V _ 13 22 mQ Vbs (ON) |. Drain-source on-state voltage | 1D = 35A, Vas = 10V _ 0.32 0.42 Vv l yts | Forward transfer admittance | lo = 35A, Vos = 10V _ 50 _ 5S Ciss Input capacitance 2850 _ pF Coss Output capacitance Vos = 10V, VGS = OV, f= 1MHz ve 800 pF Ciss Reverse transfer capacitance 450 _ pF td (on) Turn-on delay time _ 25 ns a Rise time _ Vop = 15V, I = 35A, Vas = 10V, RGEN = Ras = 500 = 126 = ns td (off) Turn-off delay time ~~ 250 _ ns tt Fall time _ 210 ns Vsp Source-drain voltage Is = 5A, Vas = OV 1.0 146 v Rth (ch-c) | Thermal resistance Channel to case _ _ 1.76 C/W ter Reverse recovery time IS = 35A, dis/dt = -50A/us 70 ns PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 100 3 2 = 402 tw = 10us a 680 < 7 & a 100us z Qo 9 5 2 EB iy x 10) a o 40 8 8 a z 3 x < 2 Te = 25C = 20 rat Pulse 5 109 a 7 5 5 50 100 150 200 35 710 23 5710' 23 57108 23 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE Vos (V) OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) 100 50 Te = 25C Vas = 10V Puise Test = az 40 =< 80 W =< a 2 & 60 5 30 ia id iia io fo ia 3 40 B 20 z 2 < ft S 20 5 10 2Vv To = 25C 2v 0 Puise Test %9 0.4 0.8 1.2 1.6 2.0 0 0.2 0.4 0.6 0.8 4.0 DRAIN-SOURCE VOLTAGE Vos (V) DRAIN-SOURCE VOLTAGE Vps.(V) 2-419 ate MITSUBISHI ELECTRICDRAIN-SOURCE ON-STATE CAPACITANCE Ciss, Coss, Crss (pF) VOLTAGE VDs (OW) (V) DRAIN CURRENT !p (A) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) vid Te = 25C Pulse Test ' ' We Ze i DE zo Oa w & oO 1p = 100A co = 8 Z 20 eo Oc 0 0 2 4 6 8 10 GATE-SOURCE VOLTAGE Vas (V) TRANSFER CHARACTERISTICS (TYPICAL) 100 To = 25C Vos = 10V Pulse Test * co ae > 60 < EG 2S A 0 $ E Bz Re 20 0 2 4 6 8 10 GATE-SOURCE VOLTAGE Vas (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) Toh = 25C t= IMHz Vas = OV _ Ciss no aR vw aS ww ave wv SWITCHING TIME. (ns) 3 57100 23 5710' 23 5710? 23 DRAIN-SOURCE VOLTAGE Vos (V) MITSUBISHI Nch POWER MOSFET FS70VSJ-03 HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 9 Te = 25C Pulse Test 0 10 23 57101 23 57102 23 57103 DRAIN CURRENT Io (A} FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 To = 25C 4 3 2 1 a po WARN Vos = 10V Puise Test 2345 7102 100 2 345 7101 DRAIN CURRENT Ip (A) SWITCHING CHARACTERISTICS (TYPICAL) 3 10 Toh = 25C 7 Voo = 15V 5] Vas = 10V 3 RAaen = Res = 50Q 2 102 7 5 4 3 2 101 109 2 345 7101 2 345 7102 DRAIN CURRENT Ip (A) 2 ~ 420 ate MITSUBISHI ELECTRICDRAIN-SOURCE BREAKDOWN VOLTAGE V (gr) oss (tC) DRAIN-SOURCE ON-STATE RESISTANCE rps (ON) (tC} DRAIN-SOURCE ON-STATE RESISTANCE ros (ON) (25C) GATE-SOURCE VOLTAGE Vas (V} DRAIN-SOURCE BREAKDOWN VOLTAGE _ V (BR) DSS (25C) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 0 Toh = 26C 101 5 4 3 2 190 nN oan 10-1 1.2 1.0 0.8 0.6 0.4 Ib = 70A Vos = 15V 0 20 40 60 80 100 GATE CHARGE Qg (nC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) Vas = 10V Ip = 1/2ib Pulse Test ~50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 50 9 50 100 150 CHANNEL TEMPERATURE Tech (C) TRANSIENT THERMAL IMPEDANCE 2th (ch-<) (C/W) ~R moor = meant moon moo 10- GATE-SOURCE THRESHOLD VOLTAGE VGs (th) (V) SOURCE CURRENT Is (A) o MITSUBISHI Nch POWER MOSFET FS70VSJ-03 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 100 Vas = 0V it Pulse Test ur 75 50 To = 125C 75C 25 25C 0 0 0.4 0.8 1.2 6 2.0 SOURCE-DRAIN VOLTAGE Vso (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 4.0 3.2 2.4 1.6 0.8 0 50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 0.1 0.05 0.02 0.01 Single Pulse 2 10-423 5710923 5710-223 5710123 5710923 5710123 5710 PULSE WIDTH tw (8) MITSUBISHI 2 - 421 ELECTRIC