34
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4886) Application : Audio and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SA1860
–150
–150
–5
–14
–3
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
■Typical Switching Characteristics (Common Emitter)
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SA1860
–100max
–100max
–150min
50min∗
–2.0max
50typ
400typ
Unit
µ
A
µ
A
V
V
MHz
pF
Conditions
VCB=–150V
VEB=–5V
IC=–25mA
VCE=–4V, IC=–5A
IC=–5A, IB=–500mA
VCE=–12V, IE=2A
VCB=–10V, f=1MHz
VCC
(V)
–60
RL
(Ω)
12
IC
(A)
–5
VBB2
(V)
5
IB2
(mA)
500
ton
(
µ
s)
0.25typ
tstg
(
µ
s)
0.85typ
tf
(
µ
s)
0.2typ
IB1
(mA)
–500
LAPT 2SA1860
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
Safe Operating Area (Single Pulse)
hFE–IC
Temperature Characteristics (Typical)
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
0
0
–5
–10
–14
–1 –2 –3 –4
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
–50mA
–100mA
I
B
=–20mA
–700mA
–600mA
–500mA
–400mA
–300mA
–200mA
–150mA
0
–3
–2
–1
0 –0.2 –0.4 –0.6 –0.8 –1.0
Base Current IB(A)
Collector-Emitter Saturation Voltage VCE(sat)(V)
IC=–10A
–5A
–0.02 –0.1 –0.5 –5–1 –10–14
20
50
100
200
Collector Current IC(A)
DC Current Gain hFE
(VCE=–4V)
Typ
–10 –50–5–2 –100 –200
–0.05
–1
–0.5
–0.1
–10
–40
–5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
DC
100ms
10ms
1ms
0.02 0.1 1 10
0
20
40
60
80
Cut-off Frequency fT(MHZ)
(VCE=–12V)
Emitter Current IE(A)
Typ
θj-a–t Characteristics
fT–IE Characteristics
(Typical)
0
–14
–10
–5
0–2–1
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=–4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
(VCE=–4V)
–0.02 –0.1 –0.5 –1 –5 –10 –14
30
50
100
200
Collector Current IC(A)
DC Current Gain hFE
125˚C
25˚C
–30˚C
0.1
1
3
0.5
1 10 100 1000 2000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
80
60
40
20
3.5
00 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
VBB1
(V)
–10
External Dimensions FM100(TO3PF)
4.41.5 1.5
BEC
5.45±0.1
ø3.3±0.2
1.6
3.3
1.75
0.8±0.2
2.15
1.05
+0.2
-0.1
5.45±0.1
23.0±0.3
16.2
9.5±0.2
5.5
15.6±0.2 5.5±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3.0
0.8
a
b
Weight : Approx 6.5g
a. Type No.
b. Lot No.
∗hFE Rank O(50to100), P(70to140), Y(90to180)
