TEXAS INSTR LOPTO? be DEP asei7e6 coaare of ed B96 TEXAS INSTR COPT . 62C 36876 8D "s . we TIP105, TIP106, TIP107 P-N-P DARLINGTON CONNECTED - SILICON POWER TRANSISTORS ~ REVISED OCTOBER 1984 . @ Designed for Complementary Use with TIP100, TIP101, TIP102 = =T=33.31 @ 80 W at 25C Case Temperature 8 AContinuous Collector Current @ Minhee of 200 at4V,8A @ Max !icEo of 50yA @ Max Vce(sat) of 2.5 Vatic = 8A Designed to Replace: 2N6042 Series SE9402 Series MJE6042 Series RCA8203B Series device schematic TO-220AB PACKAGE EMITTER COLLECTOR THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE MOUNTING TAB absolute maximum ratings at 25C case temperature (unless otherwise noted) TiP106 | TIP107 current current current oO areas at case temperature S at case temperature @ at temperature a storage temperature range a mm case - NOTES: 1. This value applies forty < 0.3 ms, duty cycle < 10%. 2. Derat linearly to 150C case temperature at the rate of 0.64 WIC or refer to Dissipation Derating Curve, Figure 9. 3. Derate linearly to 150C free-air temperature at the rate of 16 mW/C or refer to Dissipation Derating Curve, Figure 10, d XAS i 5-135 INSTRUMENTS POST OFFICE BOX 225012 DALLAS, TEXAS 75265 7 ~TEXAS 1 Create. INSTR LOPTO} b2 DE Pf aqeize oo3Ka77 2 I S88T726 TEXAS INSTR COPTO) 6c 36877 oo! fa ne ee ON, 7-33-31 TIP105, TIP106, TIP107 P-N-P DARLINGTON CONNECTED SILICON POWER TRANSISTORS , electrical characteristics at 25C case temperature PARAMETER ~ TEST CONDITIONS THPI05 TIP106 TIP107 ote 5 CE = ViBRICEO Seen icEo icBo = EB = 7 CE = 20000 | 1000 See Notes 4 and 5 he = ; CE= ~-4V, 200 See Notes 4 and & ce= 4V, -2.8 -2. VBE See Notes 4 and 5 8 See Notes 4 and 5 See Notes 4 and 5 3.5 3.5 VF See Notes 4 and & -2 -2 VCEtsat) -2.5 -2.5 NOTES: 4. These parameters must be measured using pulse techniques, ty = 300 pus, duty cycle < 2%. 5. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts and located within 3,2 mm (0.125 inch) from the device body. thermal characteristics : PARAMETER MIN TYP MAX | UNIT NOTE: 8 This Parameter is measured using a 0,08 mm (0,003 inch} mica insulator with Dow-Corning 11 compound or both sides of the = insulator, a 0. 138-32 (formerly 6-32) mounting screw with bushing, and a mounting torque of 0,9 newton-meter (8 inch-pounds). VU tesistive-load switching characteristics at 25C case temperature a PARAMETER TEST CONDITIONST MIN TYP MAX UNIT < ta . _ 0 0.035 pS : o tr Ic = 8A, Ig1 = -80mA, Igo = 80mA, . 0.3 HS : ts Veetoff) = 5V, AL = 62, See Figure 1 . 0.9 HS te 1.3 pS t Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. functional tests at 25C free-air temperature TEST TEST CONDITIONS LEVEL Power (VcgE * Ic} Vce=-~-40V, Ig = -2A, ttest = 0.158 80W ic2 lom= 1A, _L = 20mH, t= 10hz, : i Reverse Pulse Energy (S cM . 10 mJ ; . 2 trest = 0.58, See Figure 2 . oc 124 Texas W 5-136 I EXAS . , INSTRUMENTS : ~ POST OFFICE BOX 225012 DALLAS, TEXAS 75265 _fr TEXAS INSTR {OPTO+ be DEM aqb1726 oo3e7a 4 _ | , 8961726 TEXAS INSTR COPTOD ; ; 62C 36878 8D Boe Dy : TIP105, TIP106, TIP107 P-N-P DARLINGTON CONNECTED oo. SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION 7233-31 INPUT: MONITOR ; OUTPUT ~ MONITOR f Rept 100.2 1N914 1N514 1N914 ' i i Vepi 20V | i ADJUSTFOR ==> i Von=18VAT + : INPUT MONITOR TEST CIRCUIT 5V INPUT py == 10% on oe oe om on, a oe ae MONITOR i Von = -18V ~~ i 80% \ a il a ak ae it OUTPUT | Fox 2ox"|| MONITOR | 10% 10% VOLTAGE WAVEFORMS : NOTES: A. Vgen is a 30-V pulse into a 50 2 termination. t B. The Vgen waveform is supplied by a generator with the following characteristics: t, < 15ns, tf< 18ns, Zout = 502, tw = 20us, duty cycle < 2%. C. Waveforms are monitored on an oscilloscope with the following characteristics: ty < 15 ns, Rin = 10 MQ, Cin < 11.5 pF. D. Resistors must be noninductive types. . E. The d-c power supplies may require additional bypassing in order to minimize ringing. - FIGURE 1. RESISTIVE-LOAD SWITCHING i i TEXAS . INSTRUMENTS POST OFFICE 80X 225012 @ DALLAS, TEXAS 75265 5-137 TIP DevicesTEXAS INSTR fOPTOF be DEQ 8561725 ooana74 b i i | 8961726 TEXAS INSTR COPTO) 62C 36879 =D | TIP105,T1P106,TIP107, T33-3) 0 t P-N-P DARLINGTON CONNECTED , ' SILICON POWER TRANSISTORS , le. PARAMETER MEASUREMENT INFORMATION : aD Voce MONITOR % 20 mH | = Veco =20V Ic MONITOR Rg =0102 - VOLTAGE ! ! COLLECTOR CURRENT =i * COLLECTOR 0 VOLTAGE _ oO ' oO < : a VisRiceR --+- VOLTAGE AND CURRENT WAVEFORMS NOTE A: Input pulse duration is increased untillcng = 1A. i FIGURE 2. INDUCTIVE-LOAD SWITCHING . 1 - TEXAS wy 5-138 INSTRUMENTS POST OFFICE BOX 225012 DALLAS, TEXAS 75265 - a! liTEXAS INSTR fOPTO} be Def sqe172b oognean 2 a S361726 TEXAS INSTR COPTO) rors wee ao hae . TIP105, TIP106, TIP107 P-N-P DARLINGTON CONNECTED _ SILICON POWER TRANSISTORS 62C 36880 D_ TYPICAL CHARACTERISTICS STATIC FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT 3 re Vcez-2V See Notes 4 and 5 = 2 - oy rd hgE Static Forward Current Transfar Ratio 8 -2 -4 =~6 -8 -10 -12 ic Collector Current A hfe Static Forward Current Transfer Ratio T-33~-31 STATIC FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT : VcE=-4V See Notes 4 and 5 = o = 125C > Pom Toe c = ~ a Ss Oo 100 0 -2 -4 -6 -8 ~10 -12 fe Collector Current A FIGURE 3 FIGURE 4 COLLECTOR-EMITTER SATURATION VOLTAGE BASE-EMITTER VOLTAGE vs vs > COLLECTOR CURRENT COLLECTOR CURRENT a) @ Ig _ ig_ -28Lig~ 100 ig 3 See Notes 4 and 5 > See Notes 4 and 5 26 1 s B -24 Te= 35C 2 3s 3 To =-35C 8 -22 $ 8 - & o -2 2 & E > wi wi ) 18 o g & a : 16 i 2. 14 Fy BE 2 To = 125C aa 3 1.2 . 8 _ 1 > 0 -2 -4 6 -B8 -10 -12 0 -2 -4 -6 -8 -10 -12 Ig Collector Current A I Collector Current A | FIGURES FIGURE 6 t NOTES: 4. These parameters must be measured using pulse techniques, ty = 300 ys, duty cycle < 2%. i 5. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts and located within : 3,2 mm (0.125 inch) from the device body. : : . : : we a 1283 TEXAS 5-139 INSTRUMENTS POST OFFICE 8OX 225012 DALLAS, TEXAS 75265 eeTEXAS INSTR {OPTO? b2 de aseize. oosnaay y BOB1726 TEXAS INSTR COPTO)~ 62C 36881 p ! TIP105, TIP106, TIP107 T-33-31 P-N-P DARLINGTON CONNECTED SILICON POWER TRANSISTORS . at fen MAXIMUM SAFE OPERATING AREA 5" * MAXIMUM COLLECTOR CURRENT MAXIMUM COLLECTOR CURRENT vs vs COLLECTOR-EMITTER VOLTAGE UNCLAMPED INDUCTIVE LOAD -40 - Te <25 100 co 20 Nonrepetitive Pulse 40 Rpp2= 100 2 =O. To <26C < 10 =1ms < c* i I See 2 Pd =5 ms " 4 g-1 8 S$ _, : i 3 -1 TIP106 3 3 , 7 1 1 : o- L i 2-04 04 -0.1 -0.1 -1 -4 10 -40 -100 400 0.01 0.04 01 04 1 4 10 40 100 VceE Colfector-Emitter Voltage V . tL Unclamped Inductive Load mH FIGURE 7 FIGURE 8 NOTE 7: Above this point the safe operating area has not been defined. THERMAL INFORMATION . CASE TEMPERATURE DISSIPATION DERATING CURVE FREE-AIR TEMPERATURE DISSIPATION DERATING CURVE = 100 = 8 g 4 9 3 5 8 g Ree <1.56Cw & ReJA <62.5CM Oo & 60 3 g 5 : 5 g . s o So 8 = 40 o 5 g 8 8 E E 20 z I 1 c b : 0 25 50 75 100 125 150 a2 0 2% 60 75 100 125 150 Tc Case Temperature C Ta Free-Air Temperature c i FIGURE 9 FIGURE 10 5-140 TEXAS 1283 INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265