ALPHA IND/ SEMICONDUCTOR WBE D Mm 0585443 0001305 b07 MALP VHF-UHF Abrupt Tuning Diodes Features High Q Large Tuning Range Standard Capacitance Tolerances - 10%, 5%, 2% Computer Matched for Tracking (optional) Low Leakage Current Meet All MIL-STD-750 Requirements Types m@ 30 Vok Series (IN5461A,B,C - IN5476A,B,C) (IN5441A,B,C - IN5456A,B,C) 60 Volt Series IN5139 - IN5148 ADIN Description Alpha UHF-VHF tuning diodes are diffused epitaxial planar-passivated devices housed in the standard Alpha 099-001 glass package (DO-7). Low leakage current is inherent in this process. Shallow diffusions combined with a high degree of control of epitaxial layer doping uniformity results in devices with near abrupt junctions. High Q is maintained by optimizing active layer resis- tance and by careful control of the metallization process. The devices are also available in chip form and are Applications These devices are designed for electronic tuning ap- plications in the UHF-VHF region to replace mechanical tuners. They can also be used for other frequency control applications. The devices can be matched for capacitance at several bias voltages using computer- aided testing and supplied in multi-unit matched sets. Maximum Ratings suitable for mounting into circuits using Au-Sn solder. Parameter Symbol Value Units The top contact can be readily bonded with gold wire or Reverse Voltage Ve Same as V,,| Volts ribbon using conventional thermocompression bonding _ techniques. Device Dissipation at T,=25C 250 mW Operating Temperature} T,, -65 to +150 C . ge Storage Temperature Electrical Characteristics Range Ty, | -65to +200 | c (TA = 25C or as noted) 30 Volt Series Parameter Test Conditions Symbol Value Units Reverse Breakdown Voltage |, = 10pAdc Ver 30 Vdc Min. Reverse Leakage Current V, = 25 Vde. T, = 25C I, 0.02 Adc Max. Vq = 25 Vde. T, = 150C 20 pAdc Max. Diode Capacitance V, = 4.0 Vdc. f = 1.0 MHz TO, 400 ppmvc Max. Temperature Coefficient 60 Volt Series Parameter Test Conditions Symbol Value Units Reverse Breakdown Voltage I, = 10nAdc Vea 60 Vde Min. Reverse Leakage Current V, = 55 Vde. T, = 25C I, 0.02 pAdc Max. V, = 55 Vde. T, = 150C 20 pAdc Max. Diode Capacitance V_ = 4.0 Vde. f= 1.0 MHz TC, 300 ppm"C Max. Temperature CoefficientALPHA IND/ SEMICONDUCTOR 4Y8E D MM 0585443 0001 aon sug MBALP O74? VHF-UHF Abrupt Tuning Diodes 30 Volt Series C,, Diode Capacitance Q? Device V,,=4.0 Vde, f=1.0 MHz TR, Tuning Ratio V,=4.0 Vde pF C, {Crag = 1.0 MHz f = 50 MHz Nom Min Max Min 1N5461 6.8 2.7 3.1 600 1N5462 8.2 2.8 3.1 600 1N5463 10.0 28 3.1 550 1N5464 12.0 2.8 3.1 550 1NS46 15.0 2.8 3.1 550 1N5466 18.0 29 3.1 500 1N5467 20.0 29 3.1 500 1N5468 22.0 29 3.2 500 1N5469 27.0 29 3.2 500 1N5470 33.0 29 3.2 500 1N5471 39.0 2.9 3.2 450 1N5472 47.0 29 3.2 400 1N5473 56.0 29 3.3 300 1N5474 68.0 29 3.3 250 1N5475 82.0 29 3.3 225 1N5476 100.0 29 3.3 200 1N5441 6.8 25 3.1 450 1N5442 8.2 2.5 3.1 450 1N5443 10.0 26 3.1 400 1N5444 12.0 2.6 3.1 400 1N5445 15.0 26 3.1 400 1N5446 18.0 26 3.1 350 1N5447 20.0 2.6 3.1 350 1N5448 22.0 2.6 3.2 350 1N544 27.0 2.6 3.2 350 1NS450 33.0 2.6 3.2 350 1N5451 39.0 26 3.2 300 1N5452 47.0 26 3.2 250 1N5453 56.0 26 3.3 200 1N5454 68.0 27 3.3 175 1N5455 82.0 2.7 3.3 175 1N5456 100.0 2.7 3.3 175 60 Volt Series C,, Diode Capacitance Q? Device V,=4.0 Vdc, f=1.0 MHz TR, Tuning Ratio V,=4.0 Vde pF C,J/C,,. f= 1 MHz f = 50 MHz Nom Min Typ. Min 1N5139 6.8 2.7 29 350 1N5140 10.0 28 3.0 300 1N5141 12.0 2.8 3.0 300 1N5142 15.0 2.8 3.0 250 1N5143 18.0 2.8 3.0 250 1N5144 22.0 3.2 3.4 200 1N5145 27.0 3.2 3.4 200 1N5146 33.0 3.2 3.4 200 1N5147 39.0 3.2 3.4 200 1N5148 47.0 3.2 3.4 200 Notes: 1. Add suffix -06 for +10%, or -12 for +5%, or -18 for +2 tolerance on C,,- 2. Q is calculated from values of C and G measured on Boonton 33A admittance bridge using the formula Q = 2rfC/G, f = 50 MHz 4-8