A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVDSS ID = 1.0 µA 65 V
IDSS VDS = 28 V VGS = 0 V 1.0 µA
IGSS VDS = 0 V VGS = 20 V 1.0 µA
∆VGS(Q) ID = 300 mA VDS = 26 V 0.15 0.3 V
VDS(on) ID = 3.0 A VGS = 3 V 0.75 V
gfs ID = 3.0 A VDS = 10 V 1.6 S
Coss
Crss VDS = 28 V VGS = 0 V f = 1.0 MHz 38
4.6 pF
GPS
ηD
VDS = 28 V Pout = 85 W f = 960 MHz 11
45 14
53 dB
%
RF POWER MOSFET
PACKAGE STYLE .385X.850 4LFG
1 & 2 = DRAIN 3 & 4 = GATE
5 = SOURCE
DESCRIPTION:
The ASI MRF185 is a Silicon N-
channel enhancement mode lateral
MOSFET.
FEATURES:
• High Gain, Rigged Device
• Omnigold™ Metalization System
MAXIMUM RATINGS
VDS 65 V
VGS ±15 V
PDISS 250 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θJC 0.7 °C/W
MRF185
