NTE2340 Silicon NPN Transistor Darlington Power Amp, Switch Features: D 60V Zener Diode Built-In Between Collector and Base D Very Small Fluctuation in Breakdown Voltages D Large Energy Handling Capability D High Speed Switching Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 10V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 10V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Collector Power Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cut-Off Current ICBO VCB = 50V, IE = 0 - - 100 A Emitter Cut-Off Current IEBO VEB = 7V, IC = 0 - - 2 mA Collector-Emitter Breakdown Voltage V(BR)CEO IC = 5mA, IB = 0 50 - 70 V DC Current Gain hFE (1) VCE = 3V, IC = 4A 2000 - 5000 hFE (2) VCE = 3V, IC = 8A 500 - - Collector-Emitter Saturation Voltage VCE(sat) IC = 4A, IB = 8mA - - 1.5 V Base-Emitter Saturation Voltage VBE(sat) IC = 4A, IB = 8mA - - 2.0 V Transition Frequency fT VCE = 10V, IC = 0.5A, f = 1MHz - 20 - MHz Turn-On Time ton - 0.5 - s Storage Time tstg VCC = 50V, IB1 = -IB2 = 8mA, IC = 4A - 4.0 - s - 1.0 - s 50 - - mJ Fall Time Energy Handling Capability tf Es/b IC = 1A, L = 100mH, RBE = 100 C B E .343 (8.72) .148 (3.72) .256 (6.5) .059 (1.5) .406 (10.3) .043 (1.1) .413 (10.5) .032 (0.82) .100 (2.54) B .020 (.508) C E .043 (1.1)