n-channel JFETs designed for... = Analog Switches = Commutators = Choppers * ABSOLUTE MAXIMUM RATINGS (25C) Drain-Source Breakdown Voltage .........---.+-- 30 V Drain-Gate Breakdown Voltage .......-.-+: eee ees 30V Source-Gate Breakdown Voltage.......... 0.0000: 30 V Forward Gate Current ..... 0.2.0 cee ee ee eens 10mA Total Device Dissipation at TLEAD = 25C...... 625 mW Derate above 25C ....- cs eee eee eee 5.68 mW/C Operating Junction Temperature Range.... . -65 to +135C Storage Temperature Range -65 to +150C Lead Temperature (1/16 from case for 10 seconds) ELECTRICAL CHARACTERISTICS (25C unless otherwise noted) psf Siliconix Performance Curves NC See Section BENEFITS @ Low Cost Industry Standard Package Automatic Insertion Package Fast Switching trise < 5 ns (2N5638) @ Low Insertion Loss Rps(on) < 30 & (2N5638) @ Short Sample and Hold Aperture Time Crss < 4 pF 70-92 See Section 7 G6 s G D . s s Bottom View o Characteristic 2N5638 | 2N5639 2N5640 Unit Test Conditions Min | Max [Min | Max |Min | Max Gate-Source Breakdown 4 BVGSS Voltage -30 -30 -30 V | 1g =-10 HA, Vps =0 2 -1.0 -1.0 -1,0 | nA s | 'ass Gate Reverse Current Vag =-15 V. Vos = 90 fe 3ly -1.0 -1.0 -1.0 [wa | 3S ps Ta =+100C 4 1.0 1.0 1.0 | n& = =e 4 Iptoffy Drain Cutoff Current NA _| Vps = 15 V, Vg = -12 V (2N5638) __ 5|T 1.0 1.0 1.0 | wa | Vag = -8 V (2N5639),. Vgg = -6 V (2N5640):{ Ta = +100 C 6 loss Saturation Drain Current | 50 25 5.0 mA | Vps = 20 V, Vgg = 0 (Note 1) 7 VpSion) Drain-Source ON Voltage 05 0.5 os | v | Vos = 9. Ip = 12 mA (2N5638), ' Ip = 6 mA (2N5639), Ip = 3 mA (2N5640) 81 | rpsion) Rascanc Source ON 30 60 100, [to= 1 mA, Vas = 0 9 "dston) Frain Source ON 30 60 100 Ves = 0, 1p = 0 f=1kHz D Common-Source Input | 10} | Ciss ; 10 10 10 _ y Capacitance PF | Vag = -12 V, Vpg = 0 f=1MHz Common-Source Reverse " Crss Transfer Capacitance 4.0 4.0 40 . : 12 tdion) Turn-On Delay Time 4.0 6.0 8.0 Vop =10V Ip(on)=12 MA (2N5638)R, = 800 2 (2N5638) 13] [% Rise Time 5.0 8.0 10] secl VGSton)= 9 'Dfon)= 6:mA (2N5639) Fy = 1.6k (2N563) 14]w | ta(off) Turn-OF F Delay Time 5.0 10] 15 Ves(off}= -10 V !pton)=3 MA (2N5640) R_ =3.2k Q (2N5640) 16 tt Fail Time 10 20 30 NC * i 2102 _ rosion: v JEDEC registered data RL rosten) +60) = OVO O.1yF 'D NOTE: 1 Pulse test PW < 300 psec, duty cycle 3.0% NPUT =e OUTPUT 10% {SCOPE 8) 10% vi (GSlon) (SCOPE A) Nom FE vasion = PULSE | R GENERATOR es TO 60 OHM SCOPE B 0.001y FY 10K2 wa & TO 50 OHM SCOPE A TEKTRONIX 567A OR EQUIVALENT 45 1979 Siliconix incorporated OVOSNZ 6E9SNZ SE9SNZ xXIUODI