DMN3070SSN 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS RDS(ON) MAX Package 30V 40m @ VGS = 10V 50m @ VGS = 4.5V SC59 ID TA = +25C 5.1A 4.3A This new generation MOSFET has been designed to minimize the on- Low On-Resistance ESD Protected Gate Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability state resistance (RDS(ON)) and yet maintain superior switching Mechanical Data performance, making it ideal for high efficiency power management Case: SC59 Case Material - Molded Plastic. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 applications. Applications Load Switch DC-DC Converters Power Management Functions Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.014 grams (approximate) Drain 2kV D SC59 Body Diode Gate ESD PROTECTED Gate Protection Diode S G TOP VIEW Pin Configuration TOP VIEW Source Equivalent Circuit Ordering Information (Note 4) Part Number DMN3070SSN-7 Notes: Case SC59 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http"//www.diodes.com/products/packages.html Marking Information N70 Date Code Key Year Code Month Code 2010 X Jan 1 2011 Y Feb 2 DMN3070SSN Document number: DS36169 Rev. 2 - 2 Mar 3 N70 = Product Type Marking Code YM = Date Code Marking Y = Year ex: Z = 2012 M = Month ex: 9 = September YM NEW PRODUCT Description 2012 Z Apr 4 2013 A May 5 Jun 6 1 of 6 www.diodes.com 2014 B Jul 7 2015 C Aug 8 Sep 9 2016 D Oct O 2017 E Nov N Dec D March 2013 (c) Diodes Incorporated DMN3070SSN Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V TA = +25C TA = +70C TA = +25C TA = +70C TA = +25C TA = +70C TA = +25C TA = +70C Steady State NEW PRODUCT t<10s Continuous Drain Current (Note 6) VGS = 4.5V Steady State t<10s ID Value 30 20 4.2 3.3 ID 5.1 4 A ID 3.7 2.8 A A 4.3 3.3 60 2 ID Pulsed Drain Current (10s pulse, duty cycle = 1%) Maximum Body Diode Forward Current (Note 6) Units V V IDM IS A A A Thermal Characteristics Characteristic Symbol TA = +25C TA = +70C Steady state t<10s TA = +25C TA = +70C Steady state t<10s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) PD RJA PD RJA Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range RJC TJ, TSTG Value 0.78 0.5 160 115 1.3 0.8 96 68 18 -55 to +150 Units W C/W C/W W C/W C/W C/W C Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 -- -- -- -- -- -- 1 10 V A A VGS = 0V, ID = 250A VDS =24V, VGS = 0V VGS = 20V, VDS = 0V VGS(th) RDS(ON) -- 24 30 2.7 0.75 2.1 40 50 -- 1.0 V Static Drain-Source On-Resistance 1.1 -- -- -- -- VDS = VGS, ID = 250A VGS = 10V, ID = 4.2A VGS = 4.5V, ID = 2A VDS = 5V, ID =4.2A VGS = 0V, IS = 1A -- -- -- -- -- -- -- -- -- -- -- -- -- -- 697 97 67 1.47 6 13.2 2.2 1.8 4.3 4.4 20.1 4.1 7.3 7.9 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-Off Delay Time Turn-On Rise Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: IYfsI VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tD(OFF) tr tf trr Qrr m S V Test Condition pF pF pF VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 15V, ID = 9A ns ns ns ns Ns nC VDS = 15V, VGS = 0V f = 1.0MHz VDD=15V,VGEN=10V,RGEN = 6, RL=15 IF = 9A, di/dt = 500A/s IF = 9A, di/dt = 500A/s 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. The power dissipation PD is based on t<10s RJA. 6. Device mounted on 1" x 1" FR-4 PCB with high coverage 2 oz. Copper, single sided. The power dissipation PD is based on t<10s RJA. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN3070SSN Document number: DS36169 Rev. 2 - 2 2 of 6 www.diodes.com March 2013 (c) Diodes Incorporated DMN3070SSN 30 20 VDS = 5.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 16 20 15 10 12 T A = 150C 8 TA = 125C TA = 85C 4 5 TA = 25C TA = -55C 0 0.5 1.0 1.5 2.0 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 0.1 VGS = 2.5V VGS = 4.5V VGS = 10V 0.01 0 4 8 12 16 ID, DRAIN-SOURCE CURRENT Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 20 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.6 VGS = 10 V ID = 10A 1.4 1.2 VGS = 4.5V ID = 5A 1.0 0.8 0.6 50 0 3.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 25 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMN3070SSN Document number: DS36169 Rev. 2 - 2 3 of 6 www.diodes.com 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS, GATE-SOURCE VOLTAGE Figure 2 Typical Transfer Characteristics 0.08 VGS = 4.5V 0.06 T A = 125C 0.04 TA = 150C TA = 85C TA = 25C 0.02 TA = -55C 0 0 4 8 12 16 ID, DRAIN CURRENT Figure 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.08 0.06 0.04 VGS = 4.5V ID = 5A 0.02 VGS = 10V ID = 10A 0 - 50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature March 2013 (c) Diodes Incorporated DMN3070SSN ID = 1mA 1.6 IS, SOURCE CURRENT (V) VGS(th), GATE THRESHOLD VOLTAGE (V) 20 2.0 ID = 250A 1.2 0.8 0 -50 10 TA = 25C 5 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 10,000 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 1,000 1,000 CT, JUNCTION CAPACITANCE (pF) IDSS, DRAIN LEAKAGE CURRENT (nA) 15 0.4 TA = 150C TA = 125C 100 TA = 85C 10 TA = 25C Ciss Coss 100 Crss f = 1MHz 1 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Drain-Source Leakage Current vs. Voltage 0 10 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 20 10 VGS GATE THRESHOLD VOLTAGE (V) NEW PRODUCT 2.4 VDS = 15V, I D = 9A 8 6 4 2 0 0 2 4 6 8 10 12 14 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMN3070SSN Document number: DS36169 Rev. 2 - 2 16 4 of 6 www.diodes.com March 2013 (c) Diodes Incorporated DMN3070SSN Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A SC59 Min Max Typ 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D 0.95 G 1.90 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 N 0.70 0.80 0.75 0 8 All Dimensions in mm Dim A NEW PRODUCT B C G H K M N J L D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X DMN3070SSN Document number: DS36169 Rev. 2 - 2 Dimensions Value (in mm) Z 3.4 X 0.8 Y 1.0 2.4 C 1.35 E E 5 of 6 www.diodes.com March 2013 (c) Diodes Incorporated DMN3070SSN IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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