DMN3070SSN
Document number: DS36169 Rev. 2 - 2
1 of 6
www.diodes.com
March 2013
© Diodes Incorporated
DMN3070SSN
NEW PRODUCT
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS R
DS(ON) MAX Package
ID
T
A
= +25°C
30V 40mΩ @ VGS = 10V SC59 5.1A
50mΩ @ VGS = 4.5V 4.3A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
Load Switch
DC-DC Converters
Power Management Functions
Features
Low On-Resistance
ESD Protected Gate
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SC59
Case Material – Molded Plastic. UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Weight: 0.014 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN3070SSN-7 SC59 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016 2017
Code X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
e3
D
GS
TOP VIEW
Pin Configuration
Source
Gate
Protection
Diode
Gate
Drain
Body
Diode
Equivalent Circuit
TOP VIEW
ESD PROTECTED
2kV SC59
N70 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: Z = 2012
M = Month ex: 9 = September
N70
YM
DMN3070SSN
Document number: DS36169 Rev. 2 - 2
2 of 6
www.diodes.com
March 2013
© Diodes Incorporated
DMN3070SSN
NEW PRODUCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C ID 4.2
3.3 A
t<10s TA = +25°C
TA = +70°C ID 5.1
4 A
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
TA = +25°C
TA = +70°C ID 3.7
2.8 A
t<10s TA = +25°C
TA = +70°C ID 4.3
3.3 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 60 A
Maximum Body Diode Forward Current (Note 6) IS 2 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) TA = +25°C PD 0.78 W
TA = +70°C 0.5
Thermal Resistance, Junction to Ambient (Note 5) Steady state RθJA 160 °C/W
t<10s 115 °C/W
Total Power Dissipation (Note 6) TA = +25°C PD 1.3 W
TA = +70°C 0.8
Thermal Resistance, Junction to Ambient (Note 6) Steady state RθJA 96 °C/W
t<10s 68 °C/W
Thermal Resistance, Junction to Case (Note 6) RθJC 18 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS 30 — — V VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current IDSS — — 1 µA VDS =24V, VGS = 0V
Gate-Body Leakage IGSS — — ±10 µA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS
(
th
)
1.1 — 2.1 V VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance RDS(ON)
— 24 40 mΩ VGS = 10V, ID = 4.2A
— 30 50 VGS = 4.5V, ID = 2A
Forward Transfer Admittance IYfsI — 2.7 — S VDS = 5V, ID =4.2A
Diode Forward Voltage VSD — 0.75 1.0 V
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss — 697 — pF VDS = 15V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss — 97 — pF
Reverse Transfer Capacitance Crss — 67 — pF
Gate Resistance Rg — 1.47 — Ω VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 4.5V) Q
g
—6 —
nC VDS = 15V, ID = 9A
Total Gate Charge (VGS = 10V) Q
g
—13.2 —
Gate-Source Charge Q
g
s —2.2 —
Gate-Drain Charge Q
g
d —1.8 —
Turn-On Delay Time tD
(
ON
)
— 4.3 — ns
VDD=15V,VGEN=10V,RGEN = 6Ω,
RL=15Ω
Turn-Off Delay Time tD
(
OFF
)
— 4.4 — ns
Turn-On Rise Time t
r
— 20.1 — ns
Turn-Off Fall Time tf — 4.1 — ns
Reverse Recovery Time t
r
r
— 7.3 — Ns IF = 9A, di/dt = 500A/μs
Reverse Recovery Charge Q
r
r
— 7.9 — nC IF = 9A, di/dt = 500A/μs
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. The power dissipation PD is based on t<10s RθJA.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided. The power dissipation PD is based on t<10s RθJA.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN3070SSN
Document number: DS36169 Rev. 2 - 2
3 of 6
www.diodes.com
March 2013
© Diodes Incorporated
DMN3070SSN
NEW PRODUCT
0
5
10
15
20
25
30
0 0.5 1.0 1.5 2.0 2.5 3.0
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
DS
I, D
AIN
EN
(A)
D
0
4
8
12
16
20
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V , GATE-SOURCE VOLTAGE
GS
Figure 2 Typical Transfer Characteristics
I, D
AI
E
(A)
D
V = 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0.01
0.1
04 8121620
I , DRAIN-SOURCE CURRENT
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
V = 2.5V
GS
V = 4.5V
GS
V = 10V
GS
0
0.02
0.04
0.06
0.08
04 8121620
I , DRAIN CURRENT
D
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
0.6
0.8
1.0
1.2
1.4
1.6
50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 5 On-Resistance Variation with Temperature
J
, D
AIN-S
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
V = 4.5V
I= 5A
GS
D
V=V
I= 10A
GS
D
10
0
0.02
0.04
0.06
0.08
-50-25 0 255075100125150
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
, D
AI
-S
E
-
ESIS
A
E ( )
DS(ON)
V=4.5V
I= 5A
GS
D
V=V
I = 10A
GS
D
10
DMN3070SSN
Document number: DS36169 Rev. 2 - 2
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March 2013
© Diodes Incorporated
DMN3070SSN
NEW PRODUCT
0
0.4
0.8
1.2
1.6
2.0
2.4
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
J
I= 1mA
D
I= 250µA
D
V , GATE THRESHOLD VOLTAGE (V)
GS(th)
0
5
10
15
20
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 8 Diode Forward Voltage vs. Current
I, S
E
E
T (V)
S
T= 25°C
A
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9 Typical Drain-Source Leakage Current vs. Voltage
1
10
100
1,000
10,000
I, D
R
AIN LEAKA
G
E
C
U
R
R
EN
T
(nA)
DSS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0 5 10 15 20
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
10
100
1,000
, J
N
I
N
A
A
I
AN
E (p
)
T
C
iss
f = 1MHz
C
oss
C
rss
0 2 4 6 8 10 12 14 16
Q (nC)
g
, TOTAL GATE CHARGE
Figure 11 Gate Charge
0
2
4
6
8
10
V
A
E
ES
LD V
L
A
E (V)
GS
V = 15V, I = A
DS D
9
DMN3070SSN
Document number: DS36169 Rev. 2 - 2
5 of 6
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March 2013
© Diodes Incorporated
DMN3070SSN
NEW PRODUCT
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SC59
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D - - 0.95
G - - 1.90
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
N 0.70 0.80 0.75
 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 3.4
X 0.8
Y 1.0
C 2.4
E 1.35
A
M
JL
D
BC
H
K
G
N
X E
Y
C
Z
DMN3070SSN
Document number: DS36169 Rev. 2 - 2
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March 2013
© Diodes Incorporated
DMN3070SSN
NEW PRODUCT
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