DATA SH EET
Product data sheet
Supersedes data of 2004 Jan 5 2004 Feb 05
DISCRETE SEMICONDUCTORS
BFS20
NPN medium frequency transistor
2004 Feb 05 2
NXP Semiconductors Product data sheet
NPN medium frequency transistor BFS20
FEATURES
•IC(max) = 25 mA
•VCEO(max) = 20 V
•Very low feedba ck capacitance (typ. 350 fF).
APPLICATIONS
•IF and VHF thick and thin-film circ uit applications.
DESCRIPTION
NPN medium frequency transistor in a SOT23 plastic
package.
MARKING
Note
1. * = p : Made in Hong Kong .
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
TYPE NUMBER MARKING CODE(1)
BFS20 G1*
PIN DESCRIPTION
1base
2emitter
3collector
Fig.1 Simplified outline (SOT23 ) and symbo l .
handbook, halfpage
21
3
MAM255
Top view
2
3
1
ORDERING INFORMATION
LIMITING VALUES
In accordance with the A bsolute Maxi mum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
BFS20 −plastic surface mounted package; 3 leads SOT23
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter −30 V
VCEO collector-emitter voltage open base −20 V
VEBO emitter-base voltage open collector −4 V
ICcollector current (DC) −25 mA
ICM peak collector current −25 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 −250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
2004 Feb 05 3
NXP Semiconductors Pr oduct data shee t
NPN medium frequency transistor BFS20
THERMAL CHARACTE RISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector-base cut-of f current IE = 0; VCB = 20 V − − 100 nA
IE = 0; VCB = 20 V; Tj = 100 °C− − 10 µA
IEBO emitter-base cu t-off current IC = 0; VEB = 4 V − − 100 nA
hFE DC current gain IC = 7 mA; VCE = 10 V 40 85 −
VBE base-emitter vo ltage IC = 7 mA; VCE = 10 V −740 900 mV
Cccollector capacitance IE = Ie = 0; VCB = 10 V; f = 1 MHz −1−pF
Cre feedback capacitance IC = 0; VCB = 10 V; f = 1 MHz −350 −fF
fTtransition frequen c y IC = 5 mA; VCE = 10 V; f = 100 MHz 275 450 −MHz
2004 Feb 05 4
NXP Semiconductors Pr oduct data shee t
NPN medium frequency transistor BFS20
PACKAGE OUTLINE
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
2004 Feb 05 5
NXP Semiconductors Pr oduct data shee t
NPN medium frequency transistor BFS20
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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published in this doc ument, including without limitation
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratin gs only and
operation of the device at these or any other cond itions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this document d oes not form part o f an y q uotation or contra ct, is b elieve d t o b e a ccur ate a nd re li a ble and may be chan ged
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R75/05/pp6 Date of release: 2004 Feb 05 Document orde r number: 9397 750 12769
