MITSUBISHI SEMICONDUCTOR (SMALL-SIGNAL DIODE) MC2841 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE DESCRIPTION Unitmm Mitsubishi MC2841 Is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING type diode,especially designed for high speed switching application. Toe . | : nei gt 0.425 1.25401 0.425 Due to the small pin capacitance,short switching time (reverse recovery time), it is most suitable for high speed switching application and limitter ,clipper application. So se ra LF FEATURE x] -| 8 3 @Small pin capacitance z $ _ _ LF} Qo a @aQuick switching time a} le | 6) @dHigh voitage 3 @Super mini package for mounting . cH ' _| APPLICATION o2 For general high speed switching of audio machine, VCR. $ ~_ 9 o re) SiH | Sy r = . o 2 o TERMINAL CONNECTOR > CATHODE DNC EIAd : SC-70 : ANODE Note) The dimension without tolerance represent central value. MARKING INTERNAL CONNECTION a | 8 Al LlEoou UW ou MAXIMUM RATINGS Ta=25C) Oo Oo Parameter VAM reverse 75 VA DC reverse 50 lFsm 4 lM 300 fo currant 100 Pr Total a=25C) 150 Tj Junction +125 T -65 to +125 ELECTRICAL CHARACTERISTICS (Ta=25C) nae Lirnits ; Symbol Parameter Test conditions Min Typ Max Unit VFA Forward voltage {fF =10mA 0.77 0.9 Vv VFe Forward voltage LF =50mA 0.90 1.0 Vv Vea Forward voltage tr =100mA 0.95 1.2 Vv Ir Reverse current Vr =50V 0.1 LA Ce Pin capacitance Vr =0,fe1MHz 2.8 4.0 pF tr Reverse recovery time (Refer to test circuit) 4.0 ns are aS 52sMITSUBISHI SEMICONDUCTOR (SMALL-SIGNAL DIODE) FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE REVERSE RECOVERY TIME(tr) TEST CIRCUIT @INPUT VOLTAGE WAVE FORM TRIGGER Ve 7 0 O.02uF DUT Vi PULSE | SAMPLING R GENERATOR > OSCILLOSCOPE a (Zout=50) (Zin=80.9) @CURRENT WAVE FORM IN DIODE lr=10mA, Va=6V + 3kQ Fi=509 le DC POWER AA nt REVERSE RECOVERY G 7; SUPPLY TIME FOR tr=0. 11 & - hr O.1ir te TYPICAL CHARACTERISTICS FORWARD CURRENT REVERSE CURRENT VS.FORWARD VOLTAGE VS.REVERSE VOLTAGE 100 = 80 = < < c Eg 2 = b 10 b i Ld c 5 a x x 5 > oO 2 oO a a 1 $ gi zx 05 2 oO x Ww 0.2 0.1 02. 04 #06 08 1.0 1.2 0 10 30 40 50 FORWARD VOLTAGE Vr(V) REVERSE VOLTAGE Va(V) PIN CAPACITANCE _ REVERSE RECOVERY TIME VS. REVERSE VOLTAGE VS. FORWARD CURRENT 10 @ = 6 = 3 = 6 z Wi < > 5 8 g Ww 4 g e 7 3 WwW z re 2 | a lu > iu c . 0 1 2 5 10 20 50 100 0 20 40 60 80 400 REVERSE VOLTAGE Va(V) FORWARD CURRENT Ir(mA) MITSUBISHI 8-26 ate MTSUBS: